PZT159 WEITRON | Alldatasheet
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Technical content
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
IC(DC) VEBO VCEO VCBO WEITRON http://www.weitron.com.tw PNP Silicon Planar High Current Transistor (TA=25 C) Storage, Temperature *Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min). Junction Temperature Total Device Disspation TA=25°C Collector Current Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage BVCEO BVCBO -60 -100 Max V V Collector-Emitter Breakdown Voltage(1) Collector-Base Breakdown Voltage IC=-100µA, IE=0 IC=-10mA, IB=0 BVEBO ICBO ICES IEBO -6 -- V -50 -50 nA nA -10- - nA Emitter-Base Breakdown Voltage IE=-100µA, IC=0 Collector Cut-Off Current VCB=-80V, IE=0 Collector Cut-Off Current VCES=-60V Emitter-Cut-Off Current VEB=-6V, IC=0 IC(Pulse) W A V V V ACollector Current -55 to +150 +150 -15 -60 -100 Device Marking PZT159 =159 3.EMITTER 2.COLLECTOR 1. BASE 4.COLLECTOR BASE COLLECTOR 2, 4 EM ITTER 1/4 11-Jul-07 Lead(Pb)-FreeP b
http://www.weitron.com.tw ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, IC=-10mA VCE=-1V, IC=-2A VCE=-1V, IC=-5A VCE=-1V, IC=-10A VCE=-1V, IC=-5A Collector-Emitter Saturation Voltage IC=-100mA, IB=-10mA IC=-1A, IB=-100mA IC=-2A, IB=-200mA IC=-5A, IB=-500mA Base-Emitter Saturation Voltage IC=-5A, IB=-500mA Base-Emitter On Voltage Transition Frequency VCE=-10V, IC=-100mA, f=50MHz Output Capacitance VCB=-10V, IE=0, f=1MHz hFE1 hFE2 hFE3 hFE4 100 100 200 200 300 VCE(sat) VBE(sat) VBE(on) -20 -85 -155 -370 -50 -140 -210 -460 mV - -1.08 -1.24 V - -0.935 -1.07 V - 120 - MHz DYNAMIC CHARACTERISTICS SWITCHING TIMES fT - 74 - pFCob - 82 - ns ton - 350 -toff Switching Times Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%. VCC=-10V,IC=-2A, IB1=IB2=-200mA PZT159 11-Jul-07
http://www.weitron.com.tw 0.0 VCE(sat) V 0.001 0.01 0.1 1 10 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 300 100 200 -55˚C +25˚C +100˚C VCE=-1V +175˚C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector Current(A) TA=25˚C TA=25˚C IC/IB=50 IC/IB=10 Fig.2 Saturation Voltage - Collector Current Collector Current(A) Fig.1 Current Gain - Collector Current Collector Current(A) Fig.4 Saturation Voltage - Collector Current Collector Emitter Current(A) Fig.6 Safe Operating Area Collector Current(A) Fig.3 Saturation Voltage - Collector Current Collector Current(A) Fig.5 On Voltage - Collector Current hFE niaG lacipyT- hFE -Normalised Gain V EB )stloV( - tnerruC rotcelloC (A) 0.001 0.01 0.1 1 10 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V CE(sat) (V) 0.001 0.01 0.1 1 10 20 0.1 1 10 100 0.0 0.2 0.4 0.6 0.1 100 0.8 1.0 1.2 1.4 1.6 1.8 V BE(on) - (Volts) -55˚C +25˚C +100˚C +175˚C 0.1ms 1.0ms 10ms 100ms D.C. VCE=-1V -55˚C +25˚C +100˚C-55˚C +25˚C +175˚C IC / IB=10 IC / IB=10 PZT159 11-Jul-07
http://www.weitron.com.tw SOT-223 Outline Dimensions unit:mm H S F A B D G L 1 2 3 C M K J DIM A MIN MAX MILLIMETERS 6.30 6.70 B 3.30 3.70 C 1.50 1.75 D 0.60 0.89 F 2.90 3.20 G 2.20 2.40 H 0.020 0.100 J 0.24 0.35 K 1.50 2.00 L 0.85 1.05 M 0 10 S 6.70 7.30 PZT159 11-Jul-07