PXT3904U GWSEMI | Alldatasheet

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Technical content

Plastic-Encapsulate Transistors

FEATURES

z Compliment to z Low current z Low voltage MARKING: 1A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.2 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min T yp M ax Unit Collector-base breakdown voltage V (BR)CBO I C =10μA,I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA,I C =0 6 V Collector cut-off current I CBO V CB =30V,I E =0 0.05 μA Emitter cut-off current I EBO V EB =6V,I C =0 0.05 μA h FE(1) V CE =1V,I C =0.1mA 60 h FE(2) V CE =1V,I C =1mA 80 h FE(3) V CE =1V,I C =10mA 100 300 h FE(4) V CE =1V,I C =50mA 60 DC current gain h FE(5) V CE =1V,I C =100mA 30 V CE(sat)1 I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat)2 I C =50mA,I B =5mA 0.3 V V BE(sat)1 I C =10mA,I B =1mA 0.65 0.85 V Base-emitter saturation voltage V BE(sat)2 I C =50mA,I B =5mA 0.95 V Transition frequency f T V CE =20V,I C =10mA,f=100MHz 300 MHz Collector capacitance C c V CB =5V,I E =0,f=1MHz 4 pF Emitter capacitance C e V EB =0.5V,I C =0,f=1MHz 8 pF Noise figure NF V CE =5V,I c =0.1mA,f=10Hz-15.7kHz, R S =1KΩ 5 dB Delay time t d 35 ns Rise time t r 35 ns Storage time t S 200 ns Fall time t f I C =10mA , I =-I = 1mA 50 n s Collector ut-off current I CEX VCE=30V,VBE(off)=3V 0.05 μA PX TRANSISTOR(NPN) PX T3904U T3906U

TRANSISTOR(NPN) Plastic surface mounted package; 3 leads SOT-8 PACKAGE OUTLINE PX T3904U