PXFE211507FC-V1-R0

PXFE211507FC CREE | Alldatasheet

Document overview

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Technical content

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PXFE211507FC Package H-37248G-4/2 Thermally-Enhanced High Power RF LDMOS FET

170 W, 28 V, 2110 – 2170 MHz Features

• Broadband internal input and output matching
• Typical Pulsed CW performance, 2140 MHz, 28 V, single side, 16 µs, 10% duty cycle, class AB test - Output power at P 1dB = 172 W - Output power at P3dB = 208 W - Efficiency at P3dB = 64.4% - Gain = 20.3 dB
• Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
• Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi- standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 50 W avg, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 33 35 — % Adjacent Channel Power Ratio ACPR — –29 –27.5 dBc Output PAR at 0.01% probability on CCDF OPAR 5.5 6 — dB PXFE211507FC -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 900 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF pxfe211507fc_g1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 2PXFE211507FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 60 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2.7 3.0 3.3 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance (TCASE = 70°C, 50 W CW) RqJC 0.58 °C/W

Ordering Information

Type and Version Order Code Package Shipping PXFE211507FC V1 R0 PXFE211507FC-V1-R0 H-37248G-4/2 Tape & Reel, 50 pcs PXFE211507FC V1 R2 PXFE211507FC-V1-R2 H-37248G-4/2 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 3PXFE211507FC Typical Performance (data taken in test fixture) -70 -60 -50 -40 -30 -20 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 900 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency pxfe211507fc_g2 2000 2050 2100 2150 2200 2250 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain pxfe211507fc_g3 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 2000 2050 2100 2150 2200 2250 2300 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ= 900 mA, POUT = 46.99 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL pxfe211507fc_g4 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 900 mA

2110 MHz Gain

2140 MHz Gain

2170 MHz Gain

2110 MHz Eff

2140 MHz Eff

2170 MHz Eff

pxfe211507fc_g5

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 4PXFE211507FC Typical Performance (data taken in test fixture) Load Pull Performance Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, IDQ = 900 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 900 mA, ƒ = 2170 MHz

24 V Gain

28 V Gain

32 V Gain

24 V Eff

28 V Eff

32 V Eff

pxfe211507fc_g6 -25 -20 -15 -10 1950 2050 2150 2250 2350 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ= 900 mA IRL Gain pxfe211507fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 5PXFE211507FC Reference Circuit, 2110 – 2170 MHz Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PXFE211507FC V1 Test Fixture Part No. L TN/PXFE211507FC-V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2110 – 2170 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF R102 C107 C106 R101 C104 C105 C101C102C103 C201 C209 C210 C211 C202 C203 C204 C205 C206 C207 PXFE211507FC_OUT_01 RF_IN RF_OUT VGG VDD px f e211 507 f c_C D _ 12- 05 - 20 18 RO4350, 20 MIL RO4350, 20 MIL PXFE211507FC_IN_01 C212 C208 VDD R102 C107 C106 R101 C104 C105 C101C102C103 C201 C209 C210 C211 C202 C203 C204 C205 C206 C207 PXFE211507FC_OUT_01 RF_IN RF_OUT VGG VDD px f e211 507 f c_C D _ 12- 05 - 20 18 RO4350, 20 MIL RO4350, 20 MIL PXFE211507FC_IN_01 C212 C208 VDD Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 0.4 pF ATC ATC600F0R4AT250BT C103, C104, C106 Capacitor, 10 pF ATC ATC600F100JT250XT C105, C107 Capacitor, 50 V, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEY J100V Output C201 Capacitor, 18 pF ATC ATC600F180JT250XT C202 Capacitor, 0.4 pF ATC ATC600F0R4BT250XT C203, C204 Capacitor, 0.6 pF ATC ATC600F0R6BT250XT C205, C206, C207, C209, C210, C211 Capacitor, 50 V, 10 µF Taiyo Yuden UMK325C7106MM-T C208, C212 Capacitor, 100 V, 220 µF Panasonic Electronic Components ECA-2AHG221

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 6PXFE211507FC Pinout Diagram (top view) Lead connections for PXFE211507FC Pin Description D Drain G Gate V Supply Voltage, VDD D G V V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2019-01-15 7PXFE211507FC Package Outline Specifications Package H-37248G-4/2 S (16.76 [.660])9.78 [.385] 2X 15.72 [.619] 1.02 [.040] 20.57 [.810] SPH 1.57 [.062] 3.76±0.25 [.148±.010] 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] 4X 3.49±0.20 [.138±.008] 19.81±0.20 [.780±.008] 21.72 [.855] 50° 2X 2.29 [.090] 3.00 [.118] CL CL CL CL CL CL CL G D VV CL 45° x 0.64 [.025] D Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 02, 2019-01-15 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXFE211507FC

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2018-09-12 Advance All Data Sheet reflects advance specification for product development 02 2019-01-15 Production All Data Sheet reflects released product specification