PXFE181507FC CREE | Alldatasheet

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Technical content

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PXFE181507FC Package H-37248G-4/2 Thermally-Enhanced High Power RF LDMOS FET

175 W, 28 V, 1805 – 1880 MHz Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 µs, 10% duty cycle, class AB test - Output power at P 1dB = 175 W - Output power at P3dB = 222 W - Efficiency at P3dB = 60% - Gain = 21.3 dB
  • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi- standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 50 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 19 20 — dB Drain Efficiency hD 32 36 — % Adjacent Channel Power Ratio ACPR — –31 –27 dBc Output PAR at 0.01% probability on CCDF OPAR 5.7 6.2 — dB PXFE181507FC -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 900 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF pxfe181507fc_g1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 2PXFE181507FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — W Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2.6 3.0 3.4 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance (TCASE = 70°C, 50 W CW) RqJC 0.55 °C/W

Ordering Information

Type and Version Order Code Package Shipping PXFE181507FC V1 R0 PXFE181507FC-V1-R0 H-37248G-4/2 Tape & Reel, 50 pcs PXFE181507FC V1 R2 PXFE181507FC-V1-R2 H-37248G-4/2 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 3PXFE181507FC -70 -60 -50 -40 -30 -20 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 900 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency pxfe181507fc_g2 30 1650 1700 1750 1800 1850 1900 1950 2000 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain pxfe181507fc_g3 Typical Performance (data taken in test fixture) -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 1650 1700 1750 1800 1850 1900 1950 2000 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL pxfe181507fc_g4 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 900 mA 1805MHz Gain 1842MHz Gain 1880MHz Gain 1805MHz Eff 1842MHz Eff 1880MHz Eff pxfe181507fc_g5

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 4PXFE181507FC Typical Performance (cont.) Load Pull Performance Each Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, IDQ = 900 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 900 mA, ƒ = 1880 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff pxfe181507fc_g6 -35 -30 -25 -20 -15 -10 1700 1750 1800 1850 1900 1950 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ= 900 mA IRL Gain pxfe181507fc_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 5PXFE181507FC Reference Circuit, 1805 – 1880 MHz Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT PXFE181507FC V1 Test Fixture Part No. L TN/PXFE181507FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF C105 R102 C101 R101 C102 C104 C103 C106 C206 C208C207 C201 C203 C202 C204 C205 C210 C211 C212 PXFE181507FC_OUT_02 RO4350, 20 MIL (288) px f e18 150 7f c_C D_08 - 28 - 20 18 VGS VDD PXFE181507FC_IN_02 RO4350, 20 MIL (288) C213 C209 RF_IN RF_OUT VDD Components Information Component Description Manufacturer P/N Input C101, C104, C105 Capacitor, 12 pF ATC ATC600F120JT250XT C102, C106 Capacitor, 10 µF, 50 V Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 1 pF ATC ATC600F1R0CT250XT R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEY J100V Output C201, C203, C204 Capacitor, 0.2 pF ATC ATC600F0R2BT250XT C202 Capacitor, 12 pF ATC ATC600F120JT250XT C205 Capacitor, 0.4 pF ATC ATC600F0R4BT250XT C206, C207, C208, C210, C211, C212 Capacitor, 10 µF, 50 V Taiyo Yuden UMK325C7106MM-T C209, C213 Capacitor, 220 µF, 100 V Panasonic Electronic Components ECA-2AHG221

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 6PXFE181507FC Pinout Diagram (top view) Lead connections for PXFE181507FC Pin Description D Drain G Gate V Supply Voltage, VDD D G V V See next page for Package Outline Specifications

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02, 2018-08-30 7PXFE181507FC Package Outline Specifications Package H-37248G-4/2 S (16.76 [.660])9.78 [.385] 2X 15.72 [.619] 1.02 [.040] 20.57 [.810] SPH 1.57 [.062] 3.76±0.25 [.148±.010] 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] 4X 3.49±0.20 [.138±.008] 19.81±0.20 [.780±.008] 21.72 [.855] 50° 2X 2.29 [.090] 3.00 [.118] CL CL CL CL CL CL CL G D VV CL 45° x 0.64 [.025] D Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 02, 2018-08-30 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXFE181507FC

Revision History

01 2018-02-07 Advance All Data Sheet reflects advance specification for product development 01.1 2018-03-26 Advance 1, 4 Added typical pulsed CW performance, updated TBD numbers with latest specs, added pinout 01.2 2018-07-29 Production All Converted to Wolfspeed data sheet 02 2018-08-30 Production All Data Sheet reflects released product specification