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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1880 MHz, 28 V, 10 µs pulse width, 10% duty cycle, single side - Output power at P 1dB = 220 W - Efficiency = 56% - Gain = 19 dB
  • Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF , Test Model 1 with 64DPCH - Output power = 50 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –33 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency b192207nf_g1

Data Sheet 2 of 9 Rev. 02.1, 2014-11-18 PXFC192207NF DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W Operating Gate Voltage VDS = 28 V, IDQ = 1600 mA VGS 2.3 2.6 2.9 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.18 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXFC192207NF V1 R500 PXFC192207NFV1R500XUMA1 PG-HBSOF-4-1, plastic package Tape & Reel, 500 pcs

Data Sheet 3 of 9 Rev. 02.1, 2014-11-18 Typical Performance (data taken in a production test fixture) -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1810 IMDL 1810 IMDU

1842.5 IMDL 1842.5 IMDU

1880 IMDL 1880 IMDU

b192207nf_g3 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 1600 mA Efficiency Gain

1810 MHz

1842.5 MHz

1880 MHz

b192207nf_g4 0 27 32 37 42 47 52 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 1600 mA, ƒ = 1880 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency b192207nf_g5 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V, ƒ = 1875 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency b192207nf_g2

Data Sheet 4 of 9 Rev. 02.1, 2014-11-18 PXFC192207NF Typical Performance (cont.) Load Pull Performance -25 -20 -15 -10 1725 1775 1825 1875 1925 1975 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 1600 mA IRL Gain b192207nf_g6 Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 1600 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%]

Data Sheet 5 of 9 Rev. 02.1, 2014-11-18 Reference Circuit , 1805 – 1880 MHz Reference circuit assembly diagram (not to scale) PXFC192207NF_IN_01 RF_OUT VDD p x f c 1 9 2 2 0 7 n f _ C D _ 0 7 - 1 1 - 2 0 1 4 C101 C104 R804 C205 C206 C208 C207 R801 R802 RO4350, 0.508 (62) C210 C211 PXFC192207NF_OUT_01 RO4350, 0.508 (62) C204 C212 C213 C214 C209 S1 S2 S3 C802C801 C803R803 C102 C103 R101 RF_IN C202 C201 C203 VDD R102

Data Sheet 6 of 9 Rev. 02.1, 2014-11-18 PXFC192207NF Reference Circuit (cont.) Reference Circuit Assembly DUT PXFC192207NF V1 Test Fixture Part No. LTN/PXFC192207NF V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C103 Capacitor, 18 pF ATC 800A 180 C102 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C104 Capacitor, 0.8 pF ATC 800B 0R8 C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 5.6 W Panasonic Electronic Components ERJ-8RQJ5R6V R102 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R801 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R802 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R803 Resistor, 1.3K W Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 1.2K W Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer, 2K W Bourns Inc. 3224W-202ETR-ND S2 Voltage Regulator Texas Instruments LM7805 S3 Transistor Infineon Technologies BCP56 Output C201, C202 Capacitor, 0.5 pF ATC 800A 0R5 C203 Capacitor, 18 pF ATC 800A 180 C204 Capacitor, 0.2 pF ATC 800A 0R2 C205, C206, C207, C208, C210, C211, C212, C213 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C209, C214 Capacitor, 10 µF Panasonic Electronic Components EEE-HB1H100AP

Data Sheet 7 of 9 Rev. 02.1, 2014-11-18 Package Outline Specifications Package PG-HBSOF-4-1 16.75 25.4 2x1.612x1.19 0.63 1.52 D G V 16.75 0.5 1. 2. 1.52 9.75 R0.5 3.51 9.75 1.17 0.25 PG-HBSOF-4-1_01.4_11-17-2014 0.63 10º Y 10º 0.1 max 16.76 3.3 1.57±0.15 22.7±0.15 23.26 24.4 3.02 5.4 0.50.5 21.3 VIEW Y 2.7R0.4 0.75 1. 2. See next page for Diagram Notes

Data Sheet 8 of 9 Rev. 02.1, 2014-11-18 PXFC192207NF Diagram Notes–unless otherwise specified: 1. Mold protrusion of 0.30mm max per side not included 2. Dam Bar protrusion/ Metal protrusion shall not exceed 0.10mm max per side. 3. Metal protrusions are connected to source. 4.Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. All tolerances ± 0.1mm unless specified otherwise. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. Fillets and radii: all radii are 0.3 mm max. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron [10 microinch] max. 12. Pins: D – drain; G – gate; S – source; V – V DD. Package Outline Specifications Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 16.75 25.4 2x1.612x1.19 0.63 1.52 D G V 16.75 0.5 1. 2. 1.52 9.75 R0.5 3.51 9.75 1.17 0.25 PG-HBSOF-4-1_01.4_11-17-2014 0.63 10º Y 10º 0.1 max 16.76 3.3 1.57±0.15 22.7±0.15 23.26 24.4 3.02 5.4 0.50.5 21.3 VIEW Y 2.7R0.4 0.75 1. 2.

Data Sheet 9 of 9 Rev. 02.1, 2014-11-18 Edition 2014-11-18 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PXFC192207NF V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-04-11 Advance All Data Sheet reflects advance specification for product development 01.1 2014-04-18 Advance 1 Corrected typo CCDR to CCDF in Features section, Corrected package to 500 pcs in ordering table 01.2 2014-04-25 Advance 3 Revised package outline 01.3 2014-07-28 Advance 3 Revised package outline & diagram notes 02 2014-07-31 Production All All Data Sheet reflects released product specification Revised all data and includes final specs, typical performance graphs, loadpull, reference circuit, updated package outline 02.1 2014-11-18 Production 7 Updated package outline & diagram notes