PXFC192207FHV3R0

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Document overview

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• PDF pages: 9

Technical content

Features

• Broadband input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V, 16 µs pulse width, 10 % duty cycle, class AB - Output power at P 1dB = 220 W - Efficiency = 55% - Gain = 20 dB
• Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR - Output power = 50 W - Efficiency = 29% - Gain = 20 dB - ACPR = –34 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
• Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 19 20.5 — dB Drain Efficiency hD 29 32 — % Intermodulation Distortion IMD — –32.5 –29 dBc 30 35 40 45 50 55 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1930 MHz

1960 MHz

1990 MHz

c192207fh_g1 Gain Efficiency

Data Sheet 2 of 9 Rev. 04.1, 2016-06-22 PXFC192207FH DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W Operating Gate Voltage VDS = 28 V, IDQ = 1.6 A VGS 2.3 2.6 2.9 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.28 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXFC192207FH V3 R0 PXFC192207FHV3R0XTMA1 H-37288G-4/2, earless flange Tape & Reel, 50 pcs PXFC192207FH V3 R250 PXFC192207FHV3R250XTMA1 H-37288G-4/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 04.1, 2016-06-22 Typical Performance (data taken in a production test fixture) -65 -55 -45 -35 -25 -15 30 35 40 45 50 55 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c192207fh_g2 -50 -45 -40 -35 -30 -25 -20 -15 -10 30 35 40 45 50 55 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1930 IMDL 1930 IMDU

1960 IMDL 1960 IMDU

1990 IMDL 1990 IMDU

c192207fh_g3 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance at various VDD IDQ = 1600 mA, ƒ = 1990 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c192207fh_g4 0 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance IDQ = 1600 mA, VDD = 28 V c192207fh_g5

Data Sheet 4 of 9 Rev. 04.1, 2016-06-22 PXFC192207FH Typical Performance (cont.) -25 -20 -15 -10 1700 1800 1900 2000 2100 2200 2300 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal, CW Gain & Input Return Loss VDD = 28 V, IDQ = 1600 mA IRL Gain c192207fh_g6 See next page for broadband circuit impdedance

Data Sheet 5 of 9 Rev. 04.1, 2016-06-22 Each Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, 1100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Broadband Circuit Impedance Z Source Z Load G S D Freq [MHz] Z Source W Z Load W R jX R jX 1930 3.12 –4.70 1.15 –2.80 1960 3.11 –4.62 1.14 –2.69 1990 3.10 –4.55 1.13 –2.58

Data Sheet 6 of 9 Rev. 04.1, 2016-06-22 PXFC192207FH Reference Circuit , 1930 – 1990 MHz Reference circuit assembly diagram (not to scale)* PXFC192207FH_OUT_02 RF_IN RF_OUT VDD VDD C205 C204 C206 C208 C209 C202 C201 RO4350, .020 (61) PXFC192207FH_IN_02 RO4350, .020 (61) C203 +S3 C102 S1S2 C101 C103 C802 R102 R101 R802R801 R803 R804 C801 C207 C803 c 1 9 2 2 0 7 f h _ C D _ 0 4 - 3 0 - 2 0 1 3

Data Sheet 7 of 9 Rev. 04.1, 2016-06-22 Reference Circuit (cont.) Reference Circuit Assembly DUT PXFC192207FH Test Fixture Part No. LTN/PXFC192207FH V3 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102, C103 Capacitor, 33 pF ATC ATC100A330JW150XB C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R102, R801 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R802 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ101V R803 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201, C202, C204, C206, C208, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C207 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C205 Capacitor, 33 pF ATC ATC100A330JW150XB

Data Sheet 8 of 9 Rev. 04.1, 2016-06-22 PXFC192207FH Package Outline Specifications Package H-37288G-4/2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 2X 2.29 [.090] 1.98 [.078] 21.72 [.855] 30.0° 4X R0.51 +.38 -.13 [R.020 +.015 -.005 ] 2X 17.75 [.699] CL CL CL 45° x .64 [.025] G D VV 4.04+0.25 -0.13 [.159+.010 -.005 ] SPH 1.57 [.062] 1.02 [.040] 23.11 [.910] S 22.35±0.20 [.880±.008] 16.76±0.51 [.660±.020]9.78 [.385] 4X 3.49±0.51 [.138±.020] CL D Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 9 of 9 Rev. 04.1, 2016-06-22 Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PXFC192207FH V3

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-02-04 Advance All Data Sheet reflects advance specification for product development 02 2013-04-29 Production All Data Sheet reflects released product specifications 03 2013-07-18 Production All Updated package from V1 to V2 for general release Updated package and revised efficiency in Two-carrier WCDMA specifications table Updated ordering information table Updated LTN version Updated package outline 04 2014-07-15 Production All Updated package from V2 to V3 for general release Updated Two-carrier WCDMA specifications table Revised juntion temperature in Maximum Ratings table 04.1 2016-06-22 Production 2 Updated ordering information