PXFC191507FCV1R0

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Document overview

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• PDF pages: 8

Technical content

Features

• Broadband internal input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V, 10 µs pulse width, 10% duty cycle, class AB test - Output power at P 1dB = 140 W - Efficiency = 54% - Gain = 19.5 dB
• Typical single-carrier WCDMA performance, 1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF , Test Model 1 with 16DPCH - Output power = 32 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –31 dBc@ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 150 W (CW) output power
• Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency c191507fc_g1

Data Sheet 2 of 8 Rev. 02.1, 2016-06-22 PXFC191507FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — 0.05 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage VDS = 26 V, IDQ = 960 mA VGS 2.3 2.6 2.9 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 140 W CW) RqJC 0.43 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXFC191507FC V1 R0 PXFC191507FCV1R0XTMA1 H-37248G-4/2, earless flange Tape & Reel, 50 pcs PXFC191507FC V1 R250 PXFC191507FCV1R250XTMA1 H-37248G-4/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 8 Rev. 02.1, 2016-06-22 Typical Performance (data taken in a production test fixture) -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65 V, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c191507fc_g2 -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 53 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 960 mA, VGS = 2.65V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

1930 IMDL

1930 IMDU

1960 IMDL

1960 IMDU

1990 IMDL

c191507fc_g3 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 28 V, IDQ = 960 mA

1930 Gain

1960 Gain

1990 Gain

1930 Eff

1960 Eff

1990 Eff

c191507fc_g4 27 32 37 42 47 52 57 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance at various VDD IDQ = 960 mA, ƒ = 1990 MHz Gain Efficiency c191507fc_g5 VDD = 24 V Gain VDD = 28 V Gain VDD = 32 V Gain VDD = 24 V Eff VDD = 28 V Eff VDD = 32 V Eff

Data Sheet 4 of 8 Rev. 02.1, 2016-06-22 PXFC191507FC Typical Performance (cont.) Broadband Circuit Impedance Z Source Z Load G S D Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 100 µs, 10% duty cycle, VDD = 28 V, IDQ = 960 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Freq [MHz] Z Source W Z Load W R jX R jX 1930 1.34 –4.30 1.55 –3.14 1960 1.28 –4.15 1.54 –2.99 1990 1.25 –4.04 1.52 –2.86 -25 -20 -15 -10 1800 1850 1900 1950 2000 2050 2100 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 960 mA IRL Gain c191507fc_g6

Data Sheet 5 of 8 Rev. 02.1, 2016-06-22 Reference Circuit , 1930 – 1990 MHz Reference circuit assembly diagram (not to scale) PXFC191507FC_IN_01 C102 RF_IN RO4350, .020 RF_OUT S1S3 VDD c 1 9 1 5 0 7 f c _ C D _ 0 8 - 2 6 - 2 0 1 4 C101 C103 C105 C104 C106 R102 R101 C205 C204 C206 C208C207 C209 R802 R801 R803 R805 R804 C202C201 C203 RO4350, .020 (61) C210 C211 PXFC191507FC_OUT_01 (61) C801 C803 C802 C213 C214 C212 VDD

Data Sheet 6 of 8 Rev. 02.1, 2016-06-22 PXFC191507FC Reference Circuit (cont.) Reference Circuit Assembly DUT PXFC191507FC V1 Test Fixture Part No. LTN/PXFC191507FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C104, C105, Capacitor, 33 pF ATC ATC800A330JT250 C102, C106 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capacitor, 1.0 pF ATC ATC800A1R0BT250 C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R102, R805 Capacitor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 1200 Ohm Panasonic Electronic Components ERJ-3GEYJ122V R802 Resistor, 1300 Ohm Panasonic Electronic Components ERJ-3GEYJ132V R803, R804 Capacitor, 100 ohms Panasonic Electronic Components ERJ-8GEYJ101V S1 Transistor Infineon Technologies BCP56 S2 Potentiometer, 2k W Bourns Inc. 3224W-1-202E S3 Voltage Regulator Texas Instruments LM7805 Output C201, C202, C203, C204, C205, C206, C207, C208 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C209, C210 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C211, C212, C213 Capacitor, 0.3 pF ATC ATC800A0R3BT250 C214 Capacitor, 33 pF ATC ATC800A330JT250

Data Sheet 7 of 8 Rev. 02.1, 2016-06-22 Package Outline Specifications Package H-37248G-4/2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower S (16.76 [.660])9.78 [.385] 2X 15.72 [.619] 1.02 [.040] 20.57 [.810] SPH 1.57 [.062] 3.76±0.25 [.148±.010] 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] 4X 3.49±0.20 [.138±.008] 19.81±0.20 [.780±.008] 21.72 [.855] 50° 2X 2.29 [.090] 3.00 [.118] CL CL CL CL CL CL CL G D VV CL 45° x 0.64 [.025] D Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source; V – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 8 of 8 Rev. 02.1, 2016-06-22 Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PXFC191507FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-04-11 Advance All Data Sheet reflects advance specification for product development 02 2014-08-26 Production All All Data Sheet reflects released product specification Revised all data and includes final specs, typical performance graphs, loadpull, reference circuit 02.1 2016-06-22 Production 2 Updated ordering information