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Technical content

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design - Main: P1dB = 140 W Typ - Peak: P1dB = 260 W Typ
  • Typical pulsed CW performance, 2655 MHz, 28 V, Doherty configuration, 10 μs, 10% duty cycle, class AB - Output power at P1dB = 200 W - Output power at P3dB = 400 W - Efficiency = 49% (POUT = 57 W avg) - Gain = 15 dB (POUT = 57 W avg)
  • Capable of handling 10:1 VSWR @ 32 V, 100 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PXAE263708NB is a 400-watt (P 3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) VDD = 28 V, IDQ = 850 mA, POUT = 57 W avg, VGSPK = 1.5 V, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 13 14 — dB Drain Efficiency D 43.5 47 — % Adjacent Channel Power Ratio ACPR — –27 –23 dBc Output PAR at 0.01% probability on CCDF OPAR 7 7.7 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ= 850 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

PAR @ 0.01% CCDF Efficiency pxae263708nb-gr1a

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V IDSS — — 1 μA V DS = 60 V, VGS = 0 V IDSS — — 10 μA Gate Leakage Current V GS = 10 V, VDS = 0 V IGSS — — 1 μA On-State Resistance (main) V GS = 10 V, VDS = 0.1 V RDS(on) — 0.08 —  (peak) V GS = 10 V, VDS = 0.1 V RDS(on) — 0.04 —  Operating Gate Voltage (main) V DS = 28 V, IDQ = 850 mA VGS 2.7 3.1 3.5 V (peak) V DS = 28 V, IDQ = 0 mA VGS — 1.5 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage V GS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Characteristics TCASE = 70°C, VDD = 28 V, IDQ = 850 mA, 2,655 MHz Characteristic Symbol Value Unit Thermal Resistance main - 57 W CW RJC 0.61 °C/W peak - 200 W CW R JC 0.25 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Order Code Package and Description Shipping PXAE263708NB V1 R2 PXAE263708NB-V1-R2 PG-HB2SOF-8-1, overmold with Tape & Reel, 250 pcs earless flange

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Typical Performance (data taken in test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 850 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 47.56 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain pxae263708nb-gr3 -25 -20 -15 -10 -35 -30 -25 -20 -15 2550 2600 2650 2700 2750 Return Loss (dB) ACP Up, ACP Low (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ= 850 mA, POUT = 47.56 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL pxae263708nb-gr4 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 850 mA,

2690 MHz Gain

2620 MHz Gain

2655 MHz Gain

2620 MHz Eff

2655 MHz Eff

2690 MHz Eff

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Typical Performance (cont.) 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at select VDD IDQ = 850 mA, ƒ = 2690 MHz

24 V Gain

28 V Gain

32 V Gain

24 V Eff

28 V Eff

32 V Eff

-18 -16 -14 -12 -10 2500 2550 2600 2650 2700 2750 2800 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal VDD = 28 V, IDQ= 850 mA Gain IRL pxae263708nb-gr7 See next page for Load Pull Performance

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 μs, 10% duty cycle, 28 V, IDQ = 850 mA, class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] [%] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 μs, 10% duty cycle, 28 V, V GSPK = 1.7 V, class C P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] [%] ZL [W] Gain [dB] P1dB [dBm] P1dB [W] [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] [%] ZL [W] Gain [dB] P3dB [dBm] P3dB [W] [%] Reference Circuit, 2620 – 2690 MHz Reference Circuit Assembly DUT PXAE263708NB V1 Test Fixture Part No. L TA/PXAE263708NB-V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Reference Circuit (cont.) Reference circuit assembly diagram (not to scale) Components Information Component Description Manufacturer P/N Input C101, C105, C106, C107 Capacitor, 12 pF ATC ATC800A120JT250XT C102, C103, C108, C109 Capacitor, 10 μF, 50 V Taiyo Yuden UMK325C7106MM-T C104 Capacitor, 0.5 pF ATC ATC800A0R5CT250XT R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEY J100V R103 Resistor, 50 ohms Anaren C8A50Z4A U1 Hybrid coupler Anaren X3C25P1-05S Output C201, C202, C204, C205, C213, C214, C216, C217 Capacitor, 10 μF, 50 V Taiyo Yuden UMK325C7106MM-T C203, C215 Capacitor, 12 pF ATC ATC800A120JT250XT C206, C207, C208, C209, C210, C218, C219, C220, C221, C222 Capacitor, 10 μF, 100 V TDK Corporation C5750X7S2A106M230KB C211 Capacitor, 3.3 pF ATC ATC800A3R3CT250XT C212 Capacitor, 8.2 pF ATC ATC800A8R2CT250T RF_IN VDD VDD RF_OUT pxae263708nb_CD_02-11-2019-bn C201 C202 C109 C108 C107 C102 C101 R101 C103 C104 C105 R103 RO4350,20MIL(284) C203 C205 C207 C208 C209 C210 C215 C217 C219 C220 C221 C222 C212 C211 R102 C106 C204 C206 C214 C213 C216 C218 RO4350,20MIL(284) PXAE263708NBIN03 PXAE263708NBOUT03 VGG VGG

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Pinout Diagram (top view) See next page for Package Outline Specifications D1 D2 G1 G2 VV GNDGND Pg-hb2sof-8_06-20-2017 V1 V2Main Peak Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1(Main) G2 Gate Device 2 (Peak) GND Ground V1, V2 Drain video decoupling, no DC bias Lead connections for PXAE263708NB

Rev. 02, 2019-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Package Outline Specifications ϮyϬ͘ϱϬ ϰ͘Ϯϯ ϴ͘ϰϲ ϯ͘ϱϭ ϯϭ͘Ϯϲ Ϭ͘Ϭϱ Ϭ͘ϯϱ ϱ 'ϭ'Ϯ ϭϮ 'E'E s s Bottom View Find the latest and most complete information about products and packaging at the Wolfspeed Internet page www.wolfspeed.com/RF Diagram Notes–unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included 2. Fillets and radii: all radii are 0.30 mm max unless specifi ed otherwise 3. Interpret dimensions and tolerances per ISO 8015 4. Dimensions are mm 5. Exposed metal surface are tin plated, may not be covered by mold compound 6. Does not include mold/dam bar/metal protusion. 7. All tolerances ± 0.1 mm unless specifi ed otherwise 8. All metal surfaces pre-plated, except area of cut 9. Lead thickness: 0.25 mm 10. Pins: D1, D2 – drain; G1, G2 – gate; V – V DD; GND – ground, (Source – bottom metallization) Top View Side View ϯϮ͘Ϯϲ ϭ Ϯyϭϰ͘ϭϮ Ϯ͘ϴϯ ϳ͘Ϭϲ ϮyϭϬ͘ϲ Ϯyϰ͘ϰϰϵ͘ϵϲ ϭ ϵ͘ϵϲ ϲ ϯ͘ϯϬ ϭ͘ϱϳ ϯ͘ϴϭ Ϭ͘Ϯϱ ϭϵ͘ϰϲ Ϯyϭ͘ϬϮ ϰyϭϭ͘Ϯϵ Ϯ͘Ϭϯ ϳ͘ϭϵ Ϯyϭ͘ϬϬ s s ϮyϬ͘ϴ ϯϮ͘Ϯϲ ϲ W'Ͳ,Ϯ^K&ͲϴͲϭͺϬϮͲϬϱͲϮϬϭϴ 'Ϯ'ϭ Ϯϭ ϮyϬ͘ϲϯyϰϱΣ Ϯyϰ͘ϳϱ z 'E'E End View

www.wolfspeed.comRev. 02, 2019-04-03 For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 9PXAE263708NB

Revision History

Revision Date Type Page Subjects (major changes at eash revision) 01 2018-06-04 Advance All Data Sheet reflects advance specification for product development 02 2019-04-03 Production All Information for production-released device, including firm specifications, operating conditions and performance, and reference circuit specifications. © 2018 – 2019 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.