PXAE213708NB-V1-R2

PXAE213708NB CREE | Alldatasheet

Document overview

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• PDF pages: 5

Technical content

Features

• Broadband internal input and output matching
• Asymmetrical Doherty design - Main: P3dB = 160 W Typ - Peak: P3dB = 290 W Typ
• Typical Pulsed CW performance, 2180 MHz, 28 V, Doherty configuration, 10 µs pulse width, 10% duty cycle, class AB - Output power at P 3dB = 400 W - Power Added Efficiency at P3dB = 60.3% - Power Gain = 13.7 dB
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi- standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain and thermally- enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal perform- ance and superior reliability. Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 29 V, IDQ = 750 mA, VGSPEAK = 1.5 V, POUT = 54 W avg, ƒ = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 16 — dB Drain Efficiency hD — 51 — % Adjacent Channel Power Ratio ACPR — –27 — dBc Output PAR at 0.01% probability on CCDF OPAR — 8.7 — dB Advance PXAE213708NB Advance Specification Data Sheets describe products that are being considered by Wolfspeed for development and market intro - duction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Wolfspeed about the fu - ture availability of these products.

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2018-09-26 2Advance PXAE213708NB Pinout Diagram (top view) Lead connections for PXAE213708NB D1 D2 G1 G2 V V GNDGND Pg-hb2sof-8_06-20-2017 V1 V2Main Peak Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1(Main) G2 Gate Device 2 (Peak) GND Ground V1, V2 Drain video decoupling, no DC bias DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — TBD — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — TBD — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 750 mA VGS — 2.9 — V (peak) VDS = 28 V, IDQ = 0 mA VGS — 1.5 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance RqJC TBD °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAE213708NB V1 R2 TBD PG-HB2SOF-8-1 Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2018-09-26 3Advance PXAE213708NB Package Outline Specifications Diagram Notes–unless otherwise specifi ed: 1. Mold/Dam Bar/Metal protusion of 0.30mm max per side not included. 2. Fillets and radii: all radii are 0.3 mm max unless specifi ed otherwise 3. Interpret dimensions and tolerances per ISO 8015 4. Dimensions are mm 5. Exposed metal surface are tin plated, may not be covered by mold compound 6. Does not include mold/dam bar/metal protusion. 7. All tolerances ± 0.1mm unless specifi ed otherwise 9. All metal surfaces pre-plated, except area of cut 9. Lead thickness: 0.25 mm 10. Pins: D1, D2 – drain; G1, G2 – gate; V – V DD; GND – ground 32.26 2 X 14.12 2.83 7.06 2 X 10.6 2 X 4.449.96 1 9.96 6 3.30 1.57 3.81 0.25 19.46 2 X 1.02 4 X 11.29 2.03 7.19 2 X 1.00 V V 2 X 0.8 32.26 PG-HB2SOF-8-1_02-05-2018 G2G1 D2D1 2 X 0.63 X 45° 2 X 4.75 Y GNDGND 10. Pins: D1, D2 – drain; G1, G2 – gate; GND – ground; V – Drain video decoupling, no DC bias

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 01, 2018-09-26 4Advance PXAE213708NB Package Outline Specifications (cont.) Diagram Notes–unless otherwise specified: 1. Mold/Dam Bar/Metal protusion of 0.30mm max per side not included. 2. Fillets and radii: all radii are 0.3 mm max unless specified otherwise 3. Interpret dimensions and tolerances per ISO 8015 4. Dimensions are mm 5. Exposed metal surface are tin plated, may not be covered by mold compound 6. Does not include mold/dam bar/metal protusion. 7. All tolerances ± 0.1mm unless specified otherwise 9. All metal surfaces pre-plated, except area of cut 9. Lead thickness: 0.25 mm 10. Pins: D1, D2 – drain; G1, G2 – gate; V – VDD; GND – ground 32.26 2 X 14.12 2.83 7.06 2 X 10.6 2 X 4.449.96 1 9.96 6 3.30 1.57 3.81 0.25 19.46 2 X 1.02 4 X 11.29 2.03 7.19 2 X 1.00 V V 2 X 0.8 32.26 PG-HB2SOF-8-1_02-05-2018 G2G1 D2D1 2 X 0.50 4.23 8.46 3.51 31.26 0.05 0.35 G1G2 D1D2 2 X 0.63 X 45° 2 X 4.75 Y GNDGND V V GNDGND 10. Pins: D1, D2 – drain; G1, G2 – gate; GND – ground; V – Drain video decoupling, no DC bias

www.wolfspeed.comRev. 01, 2018-09-26 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 Advance PXAE213708NB

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2018-03-26 Advance All Data Sheet reflects advance specification for product development 02 2018-09-26 Advance All Converted to Wolfspeed Data Sheet Corrected ordering information