PXAD214218FV CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 130 W Typ - Peak : P1dB = 290 W Typ
  • Typical Pulsed CW performance, 2140 MHz, 28 V, Doherty configuration - Output power at P 3dB = 436 W - Efficiency = 55% - Gain = 13.5 dB
  • Capable of handling 10:1 VSWR @28 V, 110 W (WCDMA) output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PXAD214218FV is a 430-watt ( P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Fea- tures include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) VDD = 28 V, IDQ = 720 mA, VGS(PEAK) = 1.5 V, POUT = 56 W avg, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 15 16 — dB Drain Efficiency hD 45 48.7 — % Adjacent Channel Power Ratio ACPR — –24.5 –22 dBc Output PAR@0.01% CCDF OPAR 6.1 7.4 — dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF pxad214218fv_g1 PXAD214218FV

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 2PXAD214218FV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.09 — W (Peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W Operating Gate Voltage (Main) VDS = 28 V, IDQ = 720 mA VGS 2.3 2.7 2.9 V (Peak) VDS = 28 V, IDQ = 0 mA VGS — 1.4 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, 60 W CW) RqJC 0.44 °C/W (Peak, TCASE = 70°C, 280 W CW) RqJC 0.246 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAD214218FV V1 R0 PXAD214218FV-V1-R0 H-37275G-6/2, Tape & Reel, 50 pcs PXAD214218FV V1 R2 PXAD214218FV-V1-R2 H-37275G-6/2, Tape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency pxad214218fv_g2 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 1950 2050 2150 2250 2350 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, POUT = 47.78 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL pxad214218fv_g4 1950 2050 2150 2250 2350 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, POUT = 47.78 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain pxad214218fv_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V pxad214218fv_g5 2110MHz 2140MHz 2170MHz Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 4PXAD214218FV Typical RF Performance (cont.) -25 -20 -15 -10 1950 2050 2150 2250 2350 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4V IRL Gain pxad214218fv_g7 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 2170 MHz 24V 28V 32V pxad214218fv_g6 Efficiency Gain

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, VDD = 28 V , IDQ = 960 mA, class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, VDD = 28 V , IDQ = 10 mA, class B P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%]

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 6PXAD214218FV Reference Circuit, 2110 – 2170 MHz Reference circuit assembly diagram (not to scale) C209 C215 C216 C210 C211 C224 C206 C207 C214 C217 C219 C220 C218 C223 C202 C226 C225 C203 C204 C205 C227 C222 C221 C201 C208 C103 R101 C104 C101 C106 C102C105 C108 C107 R103 C110 C109 R102 C212 C213 C228 C229 RF_IN RF_OUT RO4350, 20MIL (276) PXAD214218FV_IN_O2 PXAD214218FV_OUT_O2 RO4350, 20MIL (276) VDD VDD VGS(PEAK) VGS(MAIN)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 Reference Circuit (cont.) Pinout Diagram (top view) Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) V1, V2 VDD V2V1 D2D1 G1 G2 S Main Peak Reference Circuit Assembly DUT PXAD214218FV V1 Test Fixture Part No. LTA/PXAD214218FV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2110 – 2170 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C102, C106 Capacitor, 0.5 pF ATC ATC800A0R5CT250T C103, C105, C108, C109 Capacitor, 18 pF ATC ATC800A180JT250T C104, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C107 Capacitor, 0.4 pF ATC ATC800A0R4CT250T R101, R102 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R103 Resistor, 50 ohms Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C21P1-04S Output C201, C216, C217, C223 Capacitor, 18 pF ATC ATC800A180JT250T C202, C203, C204, C205, C206, C207, C208, C209, C210, C211, C218, C219, C220, C221,C222, C224, C225, C226, C227 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C212, C213, C228, C229 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP C214 Capacitor, 0.3 pF ATC ATC800A0R3CT250T C215 Capacitor, 1.2 pF ATC ATC800A1R2CT250T

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-02 8PXAD214218FV Package Outline Specifications Package H-37275G-6/2 (top view) Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (1.63 [0.064]) 4.58+0.25-0.13 [.180+.010-.005 ] 32.26 [1.270] 31.24±0.28 [1.230±.011] CL S SPH 2.134 [.084] 2X 45° x .64 [.025] 2X 2.29 [.090] (13.72 [.540]) 2X 2.22 [.087] 30.61 [1.205] 2X (1.27 [.050]) 2X 30° LC CLLC 4X R0.51+.38-.13 [R.020+.015-.005 ] 4X 12.45 [.490] CL G1 G2 D2D1V1 2X 26.16 [1.030] (18.24 [.718]) 10.16 [.400] 6X 4.04±0.51 [.159±.020] 9.14 [.360] D

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-04-20 Advance All Data Sheet reflects advance specification for product development 02 2016-11-07 Production All Data Sheet reflects released product specification 02.1 2016-12-07 Production 1, 5 Revised typo in Features, revised PAE to Drain Eff in Load Pull performance 02.2 2017-03-30 Production 1 3. 4 Updated RF Characteristics table Fixed missing labels on CW performance graphs 03 2018-07-02 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 03, 2018-07-02 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXAD214218FV