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Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 130 W Typ - Peak : P1dB = 290 W Typ
  • Typical Pulsed CW performance, 1842.5 MHz, 28 V, Doherty configuration - Output power at P3dB = 420 W - Efficiency = 62% - Gain = 14 dB
  • Capable of handling 10:1 VSWR @ 28 V, 110 W (WCDMA) output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PXAD184218FV is a 420-watt ( P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanded LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon Doherty production test fixture) VDD = 28 V, IDQ = 720 mA, VGS(PEAK) = 1.4 V, POUT = 60 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 15 16 — dB Drain Efficiency hD 49 51.5 — % Adjacent Channel Power Ratio ACPR — –28 –25.0 dBc Output PAR@0.01% CCDF OPAR 6.8 7.7 — dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF pxad184218fv_g1

Data Sheet 2 of 9 Rev. 02.1, 2016-12-07 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA V DS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W (Peak) V GS = 10 V, VDS = 0.1 V RDS(on) — 0.02 — W Operating Gate Voltage (Main) VDS = 28 V, IDQ = 720 mA VGS 2.3 2.6 2.9 V (Peak) V DS = 28 V, IDQ = 0 mA VGS — 1.5 — V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, 60 W CW) R qJC 0.514 °C/W (Peak, TCASE = 70°C, 280 W CW) RqJC 0.297 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAD184218FV V1 R0 PXAD184218FVV1R0XTMA1 H-37275G-6/2, earless flange Tape & Reel, 50 pcs PXAD184218FV V1 R2 PXAD184218FVV1R2XTMA1 H-37275G-6/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 02.1, 2016-12-07 PXAD184218FV Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency pxad184218fv_g2 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 1725 1775 1825 1875 1925 1975 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, POUT = 47.8 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL pxad184218fv_g4 1725 1775 1825 1875 1925 1975 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, POUT = 47.8 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain pxad184218fv_g3

Data Sheet 4 of 9 Rev. 02.1, 2016-12-07 Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, VDD = 28 V, IDQ = 960 mA, class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, VDD = 28 V, IDQ = 10 mA, class B P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%]

Data Sheet 5 of 9 Rev. 02.1, 2016-12-07 PXAD184218FV Reference Circuit, 1805 – 1880 MHz Reference circuit assembly diagram (not to scale) C208 C204 C205 C216 C212 C213 C215 C206 C209 C201 C202 C214 C203 C217 C207 C801 R802 C803 R801 R803 C804 C802 R804 C105 R104 R101 C101 C103 C102 C106 R105 C108 R102 R103 C104 C107 PXAD184218FV_IN_02 PXAD184218FV_OUT_02 (276) (276) RO4350, 20 MILRO4350, 20 MIL S3 S2 C219C218 C211C210 VDD RF_OUTRF_IN VGS(PEAK) VDD VGS(MAIN)

Data Sheet 6 of 9 Rev. 02.1, 2016-12-07 Reference Circuit (cont.) Reference Circuit Assembly DUT PXAD184218FV V1 Test Fixture Part No. LTA/PXAD184218FV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C106 Capacitor, 22 pF ATC ATC800A220JT250T C102 Capacitor, 1.8 pF ATC ATC800A1R8CT250T C103 Capacitor, 0.6 pF ATC ATC800A0R6CT250T C104, C107 Capacitor, 33 pF ATC ATC800A330JT250T C105, C108 Capacitor, 10 µF Murata Electronics North America LLL31MR60J106ME01L R101, R102, R103, R104 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R105 Resistor, 50 ohms Richardson C16A50Z4 C801, C802, C803, C804 Capacitor, 1000 pF AVX Corporation 06031C102KAT2A R801 Resistor, 100 ohms Panasonic Electronic Components ERJ-8GEYJ101V R802 Resistor, Chip 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R803 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R804 Resistor, CHIP 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V S1 Resistor, Variable 2K ohms Bourns Inc. 3224W-1-202E S2 Transistor Diodes Incorporated BCP5616TA S3 Voltage Regulator Texas Instruments LM78L05ACM U1 Hybrid Coupler Anaren 05X3C19P1-05S Output C201 Capacitor, 7.5 pF ATC ATC800A7R5JT250T C202 Capacitor, 33 pF ATC ATC800A330JT250T C203 Capacitor, 0.3 pF ATC ATC800A0R3CT250T C204, C205, C206, C208, C209, C212, C213 C214, C216, C217 Capacitor,10 µF Taiyo Yuden UMK325C7106MM-T C207, C215 Capacitor, 22 pF ATC ATC800A220JT250T C210, C211, C218, C219 Capacitor, 220 µF Panasonic Electronic Components PCE4444TR-ND

Data Sheet 7 of 9 Rev. 02.1, 2016-12-07 PXAD184218FV Pinout Diagram (top view) Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange) V1, V2 VDD V2V1 D2D1 G1 G2 S Main Peak

Data Sheet 8 of 9 Rev. 02.1, 2016-12-07 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package H-37275G-6/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (1.63 [0.064]) 4.58+0.25-0.13 [.180+.010-.005 ] 32.26 [1.270] 31.24±0.28 [1.230±.011] CL S SPH 2.134 [.084] 2X 45° x .64 [.025] 2X 2.29 [.090] (13.72 [.540]) 2X 2.22 [.087] 30.61 [1.205] 2X (1.27 [.050]) 2X 30° LC CLLC 4X R0.51+.38-.13 [R.020+.015-.005 ] 4X 12.45 [.490] CL G1 G2 D2D1V1 2X 26.16 [1.030] (18.24 [.718]) 10.16 [.400] 6X 4.04±0.51 [.159±.020] 9.14 [.360] D

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-04-20 Advance All Data Sheet reflects advance specification for product development 02 2016-11-07 Production All Data Sheet reflects released product specification 02.1 2016-12-07 Production 1, 4 Revised typo in Features, revised PAE to Drain Eff inLoad Pull performance We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-12-07 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02.1, 2016-12-07