PXAC261212FC CREE | Alldatasheet
Document overview
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- PDF pages: 10
Technical content
Features
- Broadband internal matching
- Asymmetric design - Main P1dB = 50 W - Peak P1dB = 75 W
- CW performance in Doherty configuration,
2635 MHz, 28 V
- Output power at P 1dB = 107 W - Gain = 14.4 dB - Efficiency = 57%
- Integrated ESD protection: Human Body Model, class 1C (per JESD22-A114)
- Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS-compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 28 V, VGS(peak) = 1.3 V, IDQ = 280 mA, POUT = 28 W average, ƒ1 = 2630 MHz, ƒ2 = 2640 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Linear Gain Gps 14.2 15.0 — dB Drain Efficiency hD 45 48 — % Intermodulation Distortion IMD — –25 –22 dBc 29 33 37 41 45 49 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz
10 MHz carrier spacing, 8 dB PAR
3.84 MHz bandwidth
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 2PXAC261212FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 280 mA VGS 2.1 2.6 3.1 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.80 1.3 1.8 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RqJC 0.61 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PXAC261212FC V1 R0 PXAC261212FC-V1-R0 H-37248-4, ceramic open-cavity, earless T ape & Reel, 50 pcs PXAC261212FC V1 R250 PXAC261212FC-V1-R250 H-37248-4, ceramic open-cavity, earless T ape & Reel, 250 pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 3PXAC261212FC Typical Performance (data taken in Wolfspeed Doherty reference test fixture) 29 33 37 41 45 49 53 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2605 MHz -60 -40 -20 29 33 37 41 45 49 53 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2605 MHz
10 MHz carrier spacing, 8 dB PAR,
Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2575 MHz -60 -40 -20 29 33 37 41 45 49 53 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2635 MHz
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 4PXAC261212FC Typical Performance (cont.) -50 -40 -30 -20 -10 29 33 37 41 45 49 53 IMD Up and Low (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 280 mA, VGS = 2.62V, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW
2575 IMDL 2575 IMDU
2605 IMDL 2605 IMDU
2635 IMDL 2635 IMDU
Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 280 mA Efficiency Gain c261212fc-gr4
2575 MHz
2635 MHz
2605 MHz
5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 280 mA, ƒ = 2635 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c261212fc-gr5c -60 -40 -20 29 33 37 41 45 49 53 Drain Efficiency (%) IMD (dBc), ACPR (dBc) Output Power (dBm) Two-carrier 3GPP WCDMA VDD = 28 V, IDQ = 280 mA, VGS = 2.62 V, ƒ = 2575 MHz
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 5PXAC261212FC Typical Performance (cont.) 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 280 mA, ƒ = 2575 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c261212fc-gr5a0 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 280 mA, ƒ = 2605 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c261212fc-gr5b -20 -15 -10 2500 2550 2600 2650 2700 2750 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 280 mA IRL Gain c261212fc-gr6
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 6PXAC261212FC Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, VGS = 1.4 V, IDQ = 250 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, VGS = 1.4 V P1dB Class C Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load SG1 Reference Circuit, tuned for 2575 – 2675 MHz DUT PXAC261212FC Test Fixture Part No. LTA/PXAC261212FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 7PXAC261212FC Reference circuit assembly diagram (not to scale) Assembly Information Component Description Manufacturer P/N Input C101, C102 Chip capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C103, C105, C108, C109 Chip capacitor, 10 pF ATC ATC600F100JW250T C104 Chip capacitor, 0.4 pF ATC ATC600F0R4CW250T C106, C107 Chip capacitor, 0.8 pF ATC ATC600F0R8AW250T C110 Chip capacitor, 0.2 pF ATC ATC600F0R2AW250T C111 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T R101, R104 Resistor, 10 Ohm Panasonic – ECG ERJ-3GEYJ100V R102 Resistor, 5.1k Ohm Panasonic – ECG ERJ-3GEYJ512V R103 Resistor, 50 Ohm Anaren RFP-060120A15Z50 U1 90° RF hybrid coupler Anaren XC2650P-03S Reference Circuit (cont.) c 2 6 1 2 1 2 f c _ c d _ 2 0 1 4 - 0 6 - 0 3 RF_OUTRF_IN PXAC261212FC_IN_01_D RO4350, .020 (94) R104 C107 C104 C108 R103 C106 C110 C109 R102 C103 C102 C105 R101 C101 C111 RO4350, .020 (60) PXAC261212FC_OUT_01_D C213 C212 C206 C208 C210 C216 C214 C201 C202 C205 C209 C207 C211 C203 C215 PXAC261212FC C204 VGG VDD VDD VGG (table continued next page)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 8PXAC261212FC Assembly Information (cont.) Component Description Manufacturer P/N Output C201, C215, C216 Chip capacitor, 10 pF ATC ATC600F100JW250T C202, C204, C211, C208 Chip capacitor, 0.5 pF ATC ATC600F0R5CW250T C203 Capacitor, 220 µF Cornell Dubilier Electronics (CDE) SK221M050ST C205, C209, C210, C212, C213, C214 Chip capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C206 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T C207 Chip capacitor, 3.9 pF ATC ATC600F3R9CW250T Pinout Diagram (top view) Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) S D1 D2 G1 G2 Main Peak Reference Circuit (cont.)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 9PXAC261212FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A- Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
www.wolfspeed.comRev. 03, 2018-07-03 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXAC261212FC
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-03-03 Advance all Proposed specification for new product development. 02 2014-06-12 Production all Specification for production-released device. 02.1 2014-06-30 Production 1 Corrected typo in features. 02.2 2016-06-22 Production 2 Updated ordering information 03 2018-07-03 Production All Converted to Wolfspeed Data Sheet