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Technical content

Features

 Broadband internal input and output matching  Asymmetric design - Main: P1dB = 40 W Typ - Peak: P1dB = 70 W Typ  Typical Pulsed CW performance, 2590 MHz, 26 V, 160 µs, 10% duty cycle, Doherty Confi guration - Output power at P 1dB = 46.5 dBm - Output power at P3dB = 50.1 dBm  Capable of handling 10:1 VSWR @28 V, 100 W (CW) output power  Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114)  Low thermal resistance  Pb-free and RoHS compliant 29 33 37 41 45 49 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz, Doherty Fixture Gain Efficiency c261002fc_g1

Data Sheet 2 of 8 Rev. 03.3, 2016-06-15 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 65 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V IDSS — — 1 µA V DS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current V GS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) V GS = 10 V, VDS = 0.1 V R DS(on) — 0.3 — Ω (peak) V GS = 10 V, VDS = 0.1 V R DS(on) — 0.16 — Ω Operating Gate Voltage (main) V DS = 26 V, IDQ = 210 mA V GS 2.1 2.6 3.1 V (peak) V DS = 26 V, IDQ = 0 mA V GS 0.9 1.4 1.9 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage V DD 0 to +32 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (Doherty, TCASE = 70°C, 100 W CW) RθJC 0.6 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC261002FC V1 R0 PXAC261002FCV1R0XTMA1 H-37248-4, open-cavity, Tape & Reel, 50 pcs push-pull, earless fl ange PXAC261002FC V1 R250 PXAC261002FC V1R250XTMA1 H-37248-4, earless fl ange Tape & Reel, 250 pcs push-pull, earless fl ange

Data Sheet 3 of 8 Rev. 03.3, 2016-06-15 Typical Performance (data taken in a production Doherty test fi xture) -60 -50 -40 -30 -20 -10 29 33 37 41 45 49 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency c261002fc_g2 10.5 11.5 12.5 13.5 14.5 15.5 16.5 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) Power Sweep, CW VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V Efficiency Gain

2550 MHz

2585 MHz

2590 MHz

c261002fc_g4 10 10.5 11.5 12.5 13.5 14.5 15.5 16.5 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 210 mA, ƒ = 2590 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c261002fc_g5 -42 -38 -34 -30 -26 -22 -18 29 34 39 44 49 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 2550MHz IMDL 2550MHz IMDU 2585MHz IMDL 2585MHz IMDU 2590MHz IMDL 2590MHz IMDU c261002fc_g3

Data Sheet 4 of 8 Rev. 03.3, 2016-06-15 Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, VDD = 28 V, IDQ = 240 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, VGS1 = 1.4 V P1dB Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] -20 -15 -10 2500 2550 2600 2650 2700 2750 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 210 mA IRL Gain c261002fc_g6

Data Sheet 5 of 8 Rev. 03.3, 2016-06-15 Reference Circuit, 2545 – 2595 MHz Reference circuit assembly diagram (not to scale) PXAC261002FC_IN_02_D C102 RF_IN RF_OUT VDD VGSPK Pxac261002fc_CD_01-28-2014 C101 C103 C104 C106 C107 R102 R101 R103 C205 C206 C208 C207 C202 C201 C203 RO4350, .020 (194) C210 C211 PXAC261002FC_OUT RO4350, .020 (60) C105 02_D C212 C213 C204 C209 VDD VGS

Data Sheet 6 of 8 Rev. 03.3, 2016-06-15 Reference Circuit (cont.) Pinout Diagram (top view) Lead connections for PXAC261002FC Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (fl ange) Reference Circuit Assembly DUT PXAC261002FC V1 Test Fixture Part No. LTA/PXAC261002FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66, ƒ = 2545 – 2595 MHz Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C106 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102 Capacitor, 18 pF ATC ATC800A180JT250T C103 Capacitor, 1.6 pF ATC ATC800A1R6CT250T C104 Capacitor, 0.6 pF ATC ATC800A0R6CT250T C105, C107 Capacitor, 12 pF ATC ATC800A120JT250T R101, R103 Resistor, 10 ohm Panasonic Electronic Components ERJ-3GEYJ100V R102 Resistor, 50 ohm Anaren C16A50Z4 S1 Hybrid coupler Anaren X3C26P1-03S Output C201, C202 Capacitor, 12 pF ATC ATC800A120KT250T C203, C205, C208, C210 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204, C209 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221A C206 Capacitor, 0.5 pF ATC ATC800A0R5CT250T C207 Capacitor, 0.6 pF ATC ATC800A0R6CT250T C211 Capacitor, 12 pF ATC ATC800A120JT250T C212 Capacitor, 0.4 pF ATC ATC800A0R4CT250T C213 Capacitor, 3.9 pF ATC ATC800A3R9CT250T S D1 D2 G1 G2 Main Peak

Data Sheet 7 of 8 Rev. 03.3, 2016-06-15 Package Outline Specifi cations Package H-37248-4 Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. >“@ /,' )/$1*( >“@ 63+ @' ' * * >@6 ;ƒ; >ƒ;@ >“@ +BSRBB >@ $

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 Inter national Edition 2016-06-15 Published by Infi neon Technologies AG

85579 Neubiberg, Germany

© 2013 – 2016 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infineon.com/rfpower). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 03.3, 2016-06-15 PXAC261002FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-11-01 Advance All Data Sheet refl ects advance specifi cation for product development 02 2014-01-28 Production All All Data Sheet refl ects released product specifi cation Revised all data and includes fi nal specs, typical performance graphs, loadpull, reference circuit 03 2014-03-26 Production 1 Corrected frequency range. Removed "doherty" from second feature. Updated feature 2. 03.1 2014-04-04 Production 1 Removed bullet point 4 (extra lines) from Features section. 03.2 2016-06-07 Production 1 Added OPAR to RF table. 03.3 2016-06-15 Production 1 Adjust OPAR information.