DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main: 25 W Typ (P1dB) - Peak: 50 W Typ (P1dB)
  • Typical pulsed performance in a Doherty configura- tion, at 39.5 dB POUT, 2690 MHz, 28 V, with pulse 10 µs, 10% DC - Gain = 16dB - Efficiency = 45%
  • Integrated ESD protection
  • Pb-free and RoHS compliant
  • Capable of handling 10:1 VSWR @28 V, 50 W (CW) output power -75 -50 -25 27 31 35 39 43 47 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF pxfc260622sc_g1

Data Sheet 2 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.50 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.25 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 115 mA VGS 2.0 2.6 3.0 V (peak) VDS = 28 V, IDQ = 0 A VGS — 1.4 — V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 55 W CW) RqJC 0.962 °C/W Thermal Resistance (peak, TCASE = 70°C, 55 W CW) RqJC 0.499 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC260622SC V1 R250 PXAC260622SCV1R250XTMA1 H-37248H-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 8 Rev. 02.1, 2015-06-03 Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 27 31 35 39 43 47 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency pxfc260622sc_g2 -40 -35 -30 -25 -20 28 32 36 40 44 48 ACP Up & Low (dBc) Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA 3GPP WCDMA signal, PAR = 10 dB, BW 3.84 MHz 2495MHz ACPL 2495MHz ACPU 2570MHz ACPL 2570MHz ACPU 2690MHz ACPL 2690MHz ACPU pxfc260622sc_g3 29 33 37 41 45 49 53 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 115mA 2495MHz Gain 2570MHz Gain 2690MHz Gain 2495MHz Eff 2570MHz Eff 2690MHz Eff Efficiency Gain pxfc260622sc_g4 27 31 35 39 43 47 51 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 115 mA, ƒ = 2690 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff Gain Efficiency pxfc260622sc_g5

Data Sheet 4 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 115 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, VGSPEAK = 1.4 V , IDQ = 115 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] -26 -22 -18 -14 -10 2300 2400 2500 2600 2700 2800 2900 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 115 mA IRL Gain pxfc260622sc_g6

Data Sheet 5 of 8 Rev. 02.1, 2015-06-03 Reference Circuit , 2496 – 2690 MHz Reference circuit assembly diagram (not to scale) C102 RF_ IN RF_ OUT VGSPEAK p x a c 2 6 0 6 2 2 s c _ C D _ 0 4 - 0 6 - 2 0 1 5 C101 C103 C105 C104 C107 C111 C108 C109 R102 R101 R103 C205 C221 C206 C207 C209 C202 C203 MEGTRON6_20 MIL (61) C210 C110 C111 C112 C218 C219 PXAC260622SC_OUT_05 C216 C217 C215C213 C214 C201 C204 C220 C222 C208 PXAC260622SC_IN_05A MEGTRON6, 0.508 (105) C106 VDD VDDVGSMAIN

Data Sheet 6 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC260622SC V1 Test Fixture Part No. LTA/PXAC260062SC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2496 – 2690 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C102, C103, C104 Capacitor, 8.2 pF ATC ATC800A8R2JW150XB C105, C106, C107, C108, C109, C110 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C111 Capacitor, 0.5 pF ATC ATC800A0R5CW150XB R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 W Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C25P1-04S Output C201, C202, C203, C204 Capacitor, 8.2 pF ATC ATC800A8R2JW150XB C205, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216, C217, C218, C219 Capacitor, 4.7 µF Murata Electronics North America GRM32ER71H475KA88L C220 Capacitor, 1.5 pF ATC ATC800A1R5CW150XB C221 Capacitor, 1.0 pF ATC ATC800A1R0CW150XB C222 Capacitor, 0.6 pF ATC ATC800A0R6CW150XB Pinout Diagram (top view) Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (flange) Lead connections for PXAC260622SC Peak Main S G1 G2 D1 D2

Data Sheet 7 of 8 Rev. 02.1, 2015-06-03 Package Outline Specifications Package H-37248H-4 with Formed Leads Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. S D CL 4X 5°±3° 4X 0.13±0.08 [.005±.003] SPH 1.00+0.25 -0.10 [.039+.010 -.004 ] 1.49±0.25 [.059±.010] 14.75±0.50 [.581±.020] 19.81±0.20 [.780±.008] 20.57 [.810] 3.76±0.25 [.148±.010] (1.02 [.040]) 4X R0.51+0.38 -0.13 [R.020+.015 -.005 ] CL CL 2X 12.70 [.500] 4X 3.81 [.150] 9.78 [.385] (8.89 [.350]) 2X 45° x .64 [.025] (5.08 [.200]) G1 G2 D1 D2

Data Sheet 8 of 8 Rev. 02.1, 2015-06-03 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-06-03 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC260622SC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-04-03 Advance All Data Sheet reflects advance specification for product development 02 2015-04-06 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, refer- ence circuit, package outline 02.1 2015-06-03 Production 1 Updated single-carrier WCDMA test spec