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Technical content

Features

  • Main: Input matched Peak: Input and output matching
  • Asymmetric Doherty design - Main: P1dB = 15 W Typ - Peak: P1dB = 50 W Typ
  • Typical Pulsed CW performance, 2690 MHz,

28 V, 10 µs pulse width, 10% duty cycle, class AB,

  • Output power at P 1dB = 50 W - Efficiency = 50% - Gain = 15 dB
  • Typical two-carrier WCDMA performance, 2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF , Doherty Configuration - Output power = 5 W - Efficiency = 40% - Gain = 15.7 dB - IMD = –30 dBc
  • Capable of handling 10:1 VSWR @28 V, 50 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant 27 29 31 33 35 37 39 41 43 45 47 Drain Efficiency (%) Gain (dB) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain Efficiency pxac260602fc_g1

Data Sheet 2 of 8 Rev. 02.4, 2016-06-22 PXAC260602FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 0.1 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current VGS = 10 V, IDS = 0 V IGSS — — — µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.8 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.22 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 85 mA VGS 2.5 2.75 3.0 V Operating Gate Voltage (peak) VDS = 28 V, IDQ = 300 mA VGS 2.3 2.7 3.1 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 5 W CW) RqJC 4.1 °C/W Thermal Resistance (doherty, TCASE = 70°C, 20 W CW) RqJC 2.0 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC260602FC V1 R0 PXAC260602FCV1R0XTMA1 H-37248-4, earless flange Tape & Reel, 50 pcs PXAC260602FC V1 R250 PXAC260602FC V1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 8 Rev. 02.4, 2016-06-22 Typical Performance (data taken in a production test fixture) -60 -50 -40 -30 -20 -10 27 29 31 33 35 37 39 41 43 45 47 Drain Efficiency (%) IMD & ACPR (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz IMD Low IMD Up ACPR Efficiency pxac260602fc_g2 -40 -35 -30 -25 -20 -15 27 29 31 33 35 37 39 41 43 45 47 IMD (dBc) Output Power (dBm) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.62V, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

2620 IMDL 2620 IMDU

2655 IMDL 2655 IMDU

2690 IMDL 2690 IMDU

pxac260602fc_g3 11.5 12.5 13.5 14.5 15.5 16.5 17.5 27 29 31 33 35 37 39 41 43 45 47 49 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 85 mA

2620 MHz

2655 MHz

2690 MHz

pxac260602fc_g4 10 11.5 12.5 13.5 14.5 15.5 16.5 17.5 27 29 31 33 35 37 39 41 43 45 47 49 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 85 mA, ƒ = 2690 MHz Vdd = 24V Gain Vdd = 28V Gain Vdd = 32V Gain Vdd = 24V Eff. Vdd = 28V Eff. Vdd = 32V Eff. pxac260602fc_g5

Data Sheet 4 of 8 Rev. 02.4, 2016-06-22 PXAC260602FC Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, 80 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, 250 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] -20 -15 -10 13.5 14.5 15.5 16.5 17.5 2500 2550 2600 2650 2700 2750 2800 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 85 mA IRL Gain pxac260602fc_g6

Data Sheet 5 of 8 Rev. 02.4, 2016-06-22 Reference Circuit , 2620 – 2690 MHz Reference circuit assembly diagram (not to scale) PXAC260602FC_IN_02_D C102 RF_IN RF_OUTS1 VDD VG2 VG1 p x a c 2 6 0 6 0 2 f c _ C D _ 1 1 - 2 7 - 2 0 1 3 C101 C103 C105 C104 C106 C108 C107 R102 R101 R103 C205 C204 C206 C208 C207 C202 C201 C203 RO4350, .020 (61) PXAC260602FC_OUT_02_D (105) RO4350, .020 R104 VDD

Data Sheet 6 of 8 Rev. 02.4, 2016-06-22 PXAC260602FC Reference Circuit (cont.) Pinout Diagram (top view) Lead connections for PXAC260602FC Pin Description D1 Drain device 1 (Peak) D2 Drain device 2 (Main) G1 Gate device 1 (Peak) G2 Gate device 2 (Main) S Source (flange) S D1 D2 G1 G2 MainPeak Components Information Component Description Suggested Manufacturer P/N Input C101, C103, C106, C108 Capacitor, 18 pF ATC ATC800A180JT250T C102, C104 Capacitor, 10 µF Panasonic Electronic Components EEE-HB1H100AP C105, C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R103 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R102 Resistor, 50 W Anaren C16A5024 R104 Resistor, 20 W Panasonic Electronic Components ERJ-8GEYJ200V S1 Directional Coupler, 5dB Anaren X3C25P1-05S Output C201, C202, C204, C208 Capacitor, 18 pF ATC ATC800A180JT250T C203, C207 Capacitor, 100 µF Panasonic Electronic Components EEE-FP1V101AP C205, C206 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T Reference Circuit Assembly DUT PXAC260602FC V1 Test Fixture Part No. LTA/PXAC260602FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 – 2690 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower

Data Sheet 7 of 8 Rev. 02.4, 2016-06-22 Package Outline Specifications Package H-37248-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Data Sheet 8 of 8 Rev. 02.4, 2016-06-22 Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PXAC260602FC V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-10-14 Advance All Data Sheet reflects advance specification for product development 02 2013-12-02 Production All Data Sheet reflects released product specification 02.1 2013-12-12 Production 1 Revised ESD classification 02.2 2014-05-14 Production 2 Revised juntion temperature in Maximum Ratings table Corrected naming typo in Pinout Diagram 02.3 2015-12-23 Production 2 DC Characteristic table 02.4 2016-06-22 Production 2 Updated ordering information