PXAC243502FVV1R0

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Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

Features

• Asymmetric design - Main: 150 W P1dB - Peak: 200 W P1dB
• Broadband internal matching
• CW performance at 2350 MHz, 28 V - Ouput power = 250 W P 1dB - Efficiency = 46% - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant

Description

The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET de- signed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon production test fixture in Doherty configuration) VDD = 28 V, VGS(peak) = 1.0 V, IDQ = 850 mA, POUT = 68 W avg, ƒ = 2400 MHz 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.0 15.0 — dB Drain Efficiency hD 42 45 — % Adjacent Channel Power Ratio ACPR — –32 –26 dBc PXAC243502FV Package H-37275-4 2150 2250 2350 2450 2550 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR Gain Efficiency c243502fv-gr3

Data Sheet 2 of 10 Rev. 03.2, 2016-06-22 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance main VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W peak VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W Operating Gate Voltage main VDS = 28 V, IDQ = 850 mA VGS 2.3 2.6 3.0 V peak VDS = 28 V, IDQ = 0 mA VGS 0.8 1.2 1.6 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 250 W CW) RqJC 0.22 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC243502FV V1 R0 PXAC243502FVV1R0XTMA1 H-37275-4 Tape & Reel, 50 pcs PXAC243502FV V1 R250 PXAC243502FVV1R250XTMA1 H-37275-4 Tape & Reel, 250 pcs

Data Sheet 3 of 10 Rev. 03.2, 2016-06-22 PXAC243502FV Typical RF Performance (data taken in production test fixture) -60 -40 -20 27 32 37 42 47 52 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 850 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c243502fv-gr1a -60 -40 -20 27 32 37 42 47 52 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 850 mA, ƒ = 2350 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c243502fv-gr1b -60 -40 -20 27 32 37 42 47 52 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 850 mA, ƒ = 2400 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c243502fv-gr1c 0 -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 Drain Efficiency(%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 850 mA, ƒ = 2300 to 2400 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW

2300 ACPL 2350 ACPL

2400 ACPL 2300 ACPU

2350 ACPU 2400 ACPU

2300 EFF 2350 EFF

2400 EFF

ACP up, ACP low c243502fv-gr2a

Data Sheet 4 of 10 Rev. 03.2, 2016-06-22 Typical RF Performance (cont.) -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 2150 2250 2350 2450 2550 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR ACP up Input Return Loss c243502fv-gr4 27 35 43 51 59 Efficiency (%) Power Gain (dB) Output Power (dBm) Pulse CW Performance at selected VDD IDQ = 850 mA, ƒ = 2300 MHz Efficiency Gain VDD = 24 V VDD = 28 V VDD = 32 V c243502fv-gr6a 27 35 43 51 59 Efficiency (%) Power Gain (dB) Output Power (dBm) Pulse CW Performance at selected VDD IDQ = 850 mA, ƒ = 2350 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c243502fv-gr6b 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 850 mA Efficiency Gain

2400 MHz

2350 MHz

2300 MHz

Data Sheet 5 of 10 Rev. 03.2, 2016-06-22 PXAC243502FV Typical RF Performance (cont.) 27 35 43 51 59 Efficiency (%) Power Gain (dB) Output Power (dBm) Pulse CW Performance at selected VDD IDQ = 850 mA, ƒ = 2400 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c243502fv-gr6c -16 -15 -14 -13 -12 -11 -10 2150 2250 2350 2450 2550 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 850 mA Gain Input Return Loss c243502fv-gr7 See next page for Load Pull Performance

Data Sheet 6 of 10 Rev. 03.2, 2016-06-22 Main Side – Pulsed CW signal: 160 µsec, 10% duty cycle; VDD = 28 V, IDQ = 850 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Load Pull Performance Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; VDD = 28 V, IDQ = 1350 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side – Pulsed CW signal: 160 µsec, 10% duty cycle; VDD = 28 V, VGS(peak) = 1.5 V P1dB Class C Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Reference Circuit, 2300 to 2400 MHz DUT PXAC243502FV V1 Test Fixture Part No. LTA/PXAC243502FV V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower)

Data Sheet 7 of 10 Rev. 03.2, 2016-06-22 PXAC243502FV RO4350, 20 MIL (61) PXAC243502FV_IN_01 RO4350, 20 MIL (61) PXAC243502FV_OUT_01 RF_IN RF_OUT VGG p x f c 2 4 3 5 0 2 f v _ C D _ 1 - 1 5 - 1 5 VDD C210C211 C209 C208 C203 VDD C202 C201 C207 C206 C213 C212 C205 C204 C107 R103 C103 C101 R101 C105 R102 C102 C106C104 VGG Component Information Component Description Manufacturer Part Number Input C101, C102, C103, C104 Capacitor, 15 pF ATC ATC600F150JT250XT C105, C107 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C106 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT R101, R103 Chip resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V R102 Chip resistor, 50 ohms Anaren C16A50Z4 S1 Hybrid coupler Anaren X3C25P1-02S (table cont. next page) Reference circuit assembly diagram (not to scale) Reference Circuit (cont.)

Data Sheet 8 of 10 Rev. 03.2, 2016-06-22 Pinout Diagram (top view) S H - 3 7 2 7 5 - 4 _ f l _ p d _ 0 1 _ 0 8 - 1 3 - 2 0 1 4 Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) Main Peak Component Information (cont.) Component Description Manufacturer Part Number Output C201, C203 Capacitor, 15 pF ATC ATC600F150JT250XT C207 Capacitor, 0.8 pF ATC ATC600F0R8BT250XT C204 Capacitor, 3 pF ATC ATC600F3R0BT250XT C202 Capacitor, 3.9 pF ATC ATC600F3R9BT250XT C205, C206, C209, C210, C211, C213 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C212, C208 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP Reference Circuit (cont.)

Data Sheet 9 of 10 Rev. 03.2, 2016-06-22 PXAC243502FV Package Outline Specifications Package H-37275-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.13 [0.005]. 4. Pins: D1, D2 – drain; G1, G2 – gate; S (flange) – source. 6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 4X 11.68 [.460] 2X 45° X 1.19 [45° X .047] CL CLLC 2x (2.03 [.080]) 13.72 [.540] 9.14 [.360] (16.61 [.654]) 10.160 [.400] 1.63 [.064] 2.13 [.084] SPH 3.226±0.508 [.127±.020] .180 31.242±0.28 [1.230±.011] S G1 G2 D1 D2 32.26 [1.270] +0.25 C66065-A0004-C250-01-0027 H-37275-4-X LC 4.57 –0.13 +.010 -.005 ] LC [ ] 4X R0.51+0.38 –0.13 R.020+.015 –.005 24.40 [1.000]

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 03.2, 2016-06-22 Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC243502FV V1

Revision History

Revision Date Data Sheet Page Subjects (major changes at each revision) 01 2013-03-05 Advance all Proposed specification for new product development. 02 2014-12-24 Producton all Includes released-product specifications, including performance graphs and load pull data. 03 2015-01-16 Production 6 – 8 Include reference circuit information. 03.1 2015-04-13 Production 1, 2 Update RF and DC tables. Removed 1C WCDMA performance from Features, added HBM rating. Updated ordering table. 03.2 2016-06-22 Production 2 Updated ordering information