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All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC PXAC241702FC Package H-37248-4 Thermally-Enhanced High Power RF LDMOS FET
150 W, 28 V, 2300 – 2400 MHz Features
- Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ
- Broadband internal input and output matching
- Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P 1dB = 100 W - Efficiency = 49% - Gain = 17.5 dB
- Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
- Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS compliant
Description
The PXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features in- clude dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ(main) = 360 mA, VGS(peak) = 1.2 V, POUT = 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.5 — dB Drain Efficiency hD 46 52 — % Adjacent Channel Power Ratio ACPR — –33.5 –28.0 dBc Output PAR (at 0.01% probability on CCDF) OPAR 6.5 7.5 — dB -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1a
Data Sheet 2 of 10 Rev. 02.1, 2016-06-22 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 360 mA VGS 2.3 2.65 3.0 V (peak) VDS = 28 V, IDQ = 0 mA VGS 0.8 1.30 1.8 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RqJC 0.53 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PXAC241702FC V1 R0 PXAC241702FCV1R0XTMA1 H-37248-4, ceramic open-cavity, push-pull, earless T ape & Reel, 50 pcs PXAC241702FC V1 R250 PXAC241702FCV1R250XTMA1 H-37248-4, ceramic open-cavity, push-pull, earless T ape & Reel, 250 pcs
Data Sheet 3 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2350 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1b -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2400 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1c -70 -60 -50 -40 -30 -20 -10 30 35 40 45 50 55 60 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300-2400 MHz, 3GPP WCDMA signal, 10 dB PAR,
3.84 MHz Bandwidth
2300 ACPL 2350 ACPL
2400 ACPL 2300 ACPU
2350 ACPU 2400 ACPU
2300 EFF 2350 EFF
2400 EFF
Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 44.47 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain c241702fc-gr3 Typical Performance (data taken in an Infineon production test fixture)
Data Sheet 4 of 10 Rev. 02.1, 2016-06-22 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 360 mA, ƒ = 2300 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6a 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 360 mA, ƒ = 2350 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6b 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected suply voltages IDQ = 360 mA, ƒ = 2400 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6c 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 360mA Efficiency Gain c241702fc-gr5
2300 MHz
2350 MHz
2400 MHz
Typical Performance (cont.)
Data Sheet 5 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC -25 -20 -15 -10 2200 2300 2400 2500 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) CW Performance, single side Small Signal Gain & Input Return Loss, VDD = 28 V, IDQ = 360 mA IRL Gain c241702fc-gr7 See next page for load pull performance Typical Performance (cont.)
Data Sheet 6 of 10 Rev. 02.1, 2016-06-22 Load Pull Performance Z Source Z Load SG1 Reference Circuit, 2300 MHz to 2400 MHz DUT PXAC241702FC V1 Reference Circuit Part No. LTA/PXAC241702FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA P1dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, VG = 1.5 V P1dB Class C Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W]
Data Sheet 7 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N Input C101, C104, C105, C106 Capiacitor, 15 pF ATC 600F150JT250 C102, C107 Capiacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capiacitor, 0.3 pF ATC 600F0R3BT250 R101, R102 Chip resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ101V R103 Chip resistor, 50 ohms Anaren C16A50Z4 U1 Coupler Anaren X3C25P1-02S Output C201, C209, C211 Capiacitor, 15 pF ATC 600F150JT250 C202, C203, C204, C212, C213, C214 Capiacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C205, C215 Capiacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) SK221M050ST C206 Capiacitor, 0.6 pF ATC 600F0R6BT250 C207 Capiacitor, 4.7 pF ATC 600F4R7BT250 C208, C210 Capiacitor, 1.2 pF ATC 600F 1R2BT250 Reference Circuit (cont.) RF_IN RF_OUT p x a c 2 4 1 7 0 2 f c _ c d _ 8 - 2 5 - 1 4 (61) PXAC241702FC_OUT_01 RO4350, .020 PXAC241702FC_IN_01 RO4350, .020 VDD C202 C203 C204 C201 R101 C102 R103 C101 C205 C103 VDD C206 C209 C210 C211 C212 C213 C214 C208 C106 C105 C107 C215 R102 U1 C104 PXAC241702FC C207
Data Sheet 8 of 10 Rev. 02.1, 2016-06-22 Pinout Diagram (top view) Lead connections for PXAC241702FC See next page for package mechanical specifications S D1 D2 G1 G2 MainPeakMain Peak Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange)
Data Sheet 9 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A- Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, G1, G2 – gate, S (flange) – source. 6. Gold plating thickness: 1.14 ±0.38 micron [45 ±15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page www.infineon.com/rfpower
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-06-22 Published by Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02.1, 2016-06-22 PXAC241702FC V1
Revision History
Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2014-04-04 Advance All Data Sheet reflects advance specification for product development 02 2014-08-28 Production All Data Sheet represents released product specifications, including reference circuit and updated performance information. 02.1 2016-06-22 Production 2 Updated ordering information