PXAC241702FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ
  • Broadband internal input and output matching
  • Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P 1dB = 100 W - Efficiency = 49% - Gain = 17.5 dB
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap- plications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 28 V, IDQ(main) = 360 mA, VGS(peak) = 1.2 V, POUT = 28 W avg, ƒ = 2400 MHz. 3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.5 — dB Drain Efficiency hD 46 52 — % Adjacent Channel Power Ratio ACPR — –33.5 –28.0 dBc Output PAR (at 0.01% probability on CCDF) OPAR 6.5 7.5 — dB -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1a PXAC241702FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 2PXAC241702FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.19 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 360 mA VGS 2.3 2.65 3.0 V (peak) VDS = 28 V, IDQ = 0 mA VGS 0.8 1.30 1.8 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RqJC 0.53 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC241702FC V1 R0 PXAC241702FC-V1-R0 H-37248-4, ceramic open-cavity, push-pull, earless T ape & Reel, 50 pcs PXAC241702FC V1 R250 PXAC241702FC-V1-R250 H-37248-4, ceramic open-cavity, push-pull, earless T ape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 3PXAC241702FC -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2350 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1b -75 -50 -25 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2400 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c241702fc-gr1c -70 -60 -50 -40 -30 -20 -10 30 35 40 45 50 55 60 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300-2400 MHz, 3GPP WCDMA signal, 10 dB PAR,

3.84 MHz Bandwidth

2300 ACPL 2350 ACPL

2400 ACPL 2300 ACPU

2350 ACPU 2400 ACPU

2300 EFF 2350 EFF

2400 EFF

Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 44.47 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain c241702fc-gr3 Typical Performance (data taken in an Wolfspeed production test fixture)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 4PXAC241702FC 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 360 mA, ƒ = 2300 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6a 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected supply voltages IDQ = 360 mA, ƒ = 2350 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6b 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected suply voltages IDQ = 360 mA, ƒ = 2400 MHz Gain Efficiency VDD = 24 V VDD = 28 V VDD = 32 V c241702fc-gr6c 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 360mA Efficiency Gain c241702fc-gr5

2300 MHz

2350 MHz

2400 MHz

Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 5PXAC241702FC -25 -20 -15 -10 2200 2300 2400 2500 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) CW Performance, single side Small Signal Gain & Input Return Loss, VDD = 28 V, IDQ = 360 mA IRL Gain c241702fc-gr7 See next page for load pull performance Typical Performance (cont.)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 6PXAC241702FC Load Pull Performance Z Source Z Load SG1 Reference Circuit, 2300 MHz to 2400 MHz DUT PXAC241702FC V1 Reference Circuit Part No. LTA/PXAC241702FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference circuit on the Wolfspeed Web site at www.wolfspeed.com/RF Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA P1dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, VG = 1.5 V P1dB Class C Max Output Power Max Efficiency Freq [MHz] Zin [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zo [W]

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 7PXAC241702FC Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N Input C101, C104, C105, C106 Capiacitor, 15 pF ATC 600F150JT250 C102, C107 Capiacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C103 Capiacitor, 0.3 pF ATC 600F0R3BT250 R101, R102 Chip resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ101V R103 Chip resistor, 50 ohms Anaren C16A50Z4 U1 Coupler Anaren X3C25P1-02S Output C201, C209, C211 Capiacitor, 15 pF ATC 600F150JT250 C202, C203, C204, C212, C213, C214 Capiacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C205, C215 Capiacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) SK221M050ST C206 Capiacitor, 0.6 pF ATC 600F0R6BT250 C207 Capiacitor, 4.7 pF ATC 600F4R7BT250 C208, C210 Capiacitor, 1.2 pF ATC 600F 1R2BT250 Reference Circuit (cont.) RF_IN RF_OUT p x a c 2 4 1 7 0 2 f c _ c d _ 8 - 2 5 - 1 4 (61) PXAC241702FC_OUT_01 RO4350, .020 PXAC241702FC_IN_01 RO4350, .020 VDD C202 C203 C204 C201 R101 C102 R103 C101 C205 C103 VDD C206 C209 C210 C211 C212 C213 C214 C208 C106 C105 C107 C215 R102 U1 C104 PXAC241702FC C207

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 8PXAC241702FC Pinout Diagram (top view) Lead connections for PXAC241702FC See next page for package mechanical specifications S D1 D2 G1 G2 MainPeakMain Peak Pin Description D1 Drain Device 1 (Main) D2 Drain Device 2 (Peak) G1 Gate Device 1 (Main) G2 Gate Device 2 (Peak) S Source (flange)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03 9PXAC241702FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A- Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, G1, G2 – gate, S (flange) – source. 6. Gold plating thickness: 1.14 ±0.38 micron [45 ±15 microinch].

www.wolfspeed.comRev. 03, 2018-07-03 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXAC241702FC

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-04-04 Advance All Data Sheet reflects advance specification for product development 02 2014-08-28 Production All Data Sheet represents released product specifications, including reference circuit and updated performance information. 02.1 2016-06-22 Production 2 Updated ordering information 03 2018-07-03 Production All Converted to Wolfspeed Data Sheet