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Document overview

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Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 130 W Typ - Peak : P1dB = 200 W Typ
  • Typical Pulsed CW performance, 2025 MHz, 28 V, combined outputs, Doherty Configuration - Output power at P 1dB = 250 W - Efficiency = 55% - Gain = 16 dB
  • Capable of handling 10:1 VSWR @28 V, 250 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c203302fv_g1

Data Sheet 2 of 8 Rev. 02.1, 2016-06-22 PXAC203302FV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.088 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 900 mA VGS 2.5 2.7 2.8 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.6 1.1 1.4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 56.2 W CW) RqJC 0.62 °C/W (peak, TCASE = 70°C, 260 W CW) RqJC 0.35 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC203302FV V1 R0 PXAC203302FVV1R0XTMA1 H-37275-4, earless flange Tape & Reel, 50 pcs PXAC203302FV V1 R250 PXAC203302FVV1R250XTMA1 H-37275-4, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 8 Rev. 02.1, 2016-06-22 Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 57 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2025 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency c203302fv_g2 30 1750 1850 1950 2050 2150 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain c203302fv_g3 -25 -20 -15 -10 -35 -30 -25 -20 -15 1750 1850 1950 2050 2150 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = 47.5 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL c203302fv_g4 0 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 900mA 2010MHz Gain 2025MHz Gain 1920MHz Gain 1880MHz Gain 2025MHz Eff 2010MHz Eff 1920MHz Eff 1880MHz Eff c203302fv_g5 Efficiency Gain

Data Sheet 4 of 8 Rev. 02.1, 2016-06-22 PXAC203302FV Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 800 mA, Class AB P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, VGS = 1.4 V, Class C P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] -20 -15 -10 1825 1875 1925 1975 2025 2075 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ = 900 mA IRL Gain c203302fv_g7 0 29 33 37 41 45 49 53 57 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 900 mA, ƒ = 2025 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff c203302fv_g6 Gain Efficiency

Data Sheet 5 of 8 Rev. 02.1, 2016-06-22 Reference Circuit , 1880 – 2025 MHz Reference circuit assembly diagram (not to scale) C212 C206 C203 C201 C214 C209 C213 C204 C208 C205 C210 C207 C202 R101 C109 R103 C106 C103 C111 C101 R102 C102 C110 C105 C104 C108 C107 C112 PXAC203302FV_IN_01 RF_IN RF_OUT VDD VGS VDD p x a c 2 0 3 3 0 2 f v _ C D _ 0 6 - 0 9 - 2 0 1 5 RO4350, .020 MIL (61) PXAC203302FV_OUT_01 RO4350, .020 MIL (61) C215 C211 VGSPK

Data Sheet 6 of 8 Rev. 02.1, 2016-06-22 PXAC203302FV Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC203302FC V1 Test Fixture Part No. LTA/PXAC203302FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1880 – 2025 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C102, C103, C104, C105 Capacitor, 15 pF ATC ATC600F150JT250XT C106, C111 Capacitor, 1 pF ATC ATC600F1R0BT250XT C107 Capacitor, 2.7 pF ATC ATC600F2R7BT250XT C108 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT C109 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT C112 Capacitor, 0.8 pF ATC ATC600F0R8BT250XT R101, R102 Resistor, 10 W Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 W Richardson C16A50Z4 U1 Hybrid Coupler Anaren X3C19P1-05S Output C201, C202 Capacitor, 15 pF ATC ATC600F150JT250XT C203 Capacitor, 1.6 pF ATC ATC600F1R6BT250XT C204, C205 Capacitor, 6.8 pF ATC ATC600F6R8BT250XT C206 Capacitor, 0.3 pF ATC ATC600F0R3BT250XT C207, C208, C209, C212, C213, C214 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C210 Capacitor, 0.5 pF ATC ATC600F0R5BT250XT C211, C215 Capacitor, 220 µF Cornell Dubilier Electronics (CDE) SK221M050ST Pinout Diagram (top view) Lead connections for PXAC203302FV S H - 372 75- 4_ fl- D mp _pd _01 _08 -1 3-2 01 4 Main Peak Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange)

Data Sheet 7 of 8 Rev. 02.1, 2016-06-22 Package Outline Specifications Package H-37275-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 4X 11.68 [.460] 2X 45° X 1.19 [45° X .047] CL CLLC 2x (2.03 [.080]) 13.72 [.540] 9.14 [.360] (16.61 [.654]) 10.160 [.400] 1.63 [.064] 2.13 [.084] SPH 3.226±0.508 [.127±.020] .180 31.242±0.28 [1.230±.011] S G1 G2 D1 D2 32.26 [1.270] +0.25 C66065-A0004-C250-01-0027 H-37275-4-X LC 4.57 –0.13 +.010 -.005 ] LC [ ] 4X R0.51+0.38 –0.13 R.020+.015 –.005 24.40 [1.000] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 8 of 8 Rev. 02.1, 2016-06-22 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC203302FV V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-10-08 Advance All Data Sheet reflects advance specification for product development 02 2015-06-09 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, refer- ence circuit, package outline 02.1 2016-06-22 Production 2 Updated ordering information