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  • PDF pages: 9

Technical content

Features

  • Asymmetric Doherty design - Main: 55 W Typ (P1dB) - Peak: 85 W Typ (P1dB)
  • Broadband internal matching
  • Pulsed CW performance, 1960 MHz, 28 V - Output power at P1dB = 100 W - Gain = 18 dB - Efficiency = 55%
  • Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Can be operated with IDQ of up to 700 mA (not to exceed maximum ratings limits) RF Specifications Single-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture) VDD = 28 V, VGS(PEAK) = 1.4 V, IDQ = 360 mA, POUT = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band- width = 3.84 MHz, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.7 — dB Drain Efficiency hD 41 44 — % Adjacent Channel Power Ratio ACPR — –28 –26 dBc Output PAR @ 0.01% CCDF 1880 MHz OPAR 7.0 — — dB Output PAR @ 0.01% CCDF 2025 MHz OPAR 7.8 — — dB -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Gain (dB), Peak/Average Ratio Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c201602fc-gr1a

Data Sheet 2 of 9 Rev. 04.1, 2016-07-19 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA V DS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.175 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.175 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 360 mA VGS 2.5 2.71 2.8 V (peak) VDS = 1.2 V, IDQ = 0 A VGS 0.9 1.2 1.5 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (Doherty, TCASE = 70°C, 100 W CW) RqJC 0.48 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC201602FC V1 R0 PXAC201602FCV1R0XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 50 pcs PXAC201602FC V1 R250 PXAC201602FCV1R250XTMA1 H-37248-4, ceramic open-cavity, earless Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 04.1, 2016-07-19 PXAC201602FC Typical Performance (data taken in a reference test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 Drain Efficiency(%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz and 2025 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Efficiency ACP Up ACP Low

1880 MHz

2025 MHz

1650 1750 1850 1950 2050 2150 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain c201602fc-gr3 -35 -30 -25 -20 -15 -10 -30 -25 -20 -15 1650 1750 1850 1950 2050 2150 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm, 3GPP WCDMA signal, 10 dB PAR Return Loss ACP Up c201602fc-gr4 -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Gain (dB), Peak/Average Ratio Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2025 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c201602fc-gr1b

Data Sheet 4 of 9 Rev. 04.1, 2016-07-19 Typical Performance (cont.) 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 360 mA Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 360 mA, ƒ = 1880 MHz Gain Efficiency 24 V 28 V 32 V c201602fc-gr6a 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 360 mA, ƒ = 2025 MHz Gain Efficiency 24 V 28 V 32 V c201602fc-gr6b -30 -25 -20 -15 -10 1750 1850 1950 2050 2150 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 360 mA IRL Gain c201602fc-gr7

Data Sheet 5 of 9 Rev. 04.1, 2016-07-19 PXAC201602FC Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load SG1 Reference Circuit, tuned for 1800 – 2200 MHz DUT PXAC201602FC V1 Reference Circuit Part No. LTA/PXAC201602FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower)

Data Sheet 6 of 9 Rev. 04.1, 2016-07-19 Reference circuit assembly diagram (not to scale) Assembly Information Component Description Suggested Manufacturer P/N Input C101, C104, C106, C107 Chip capacitor, 18 pF ATC ATC800A180JT250T C102 Chip capacitor, 0.4 pF ATC ATC600F0R4BT C103 Chip capacitor, 1.6 pF ATC ATC600F1R6BT C105 Chip capacitor, 2.4 pF ATC ATC800A2R4BT250T C108 Chip capacitor, 0.3 pF ATC ATC600F0R3BT C109, C110 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 Ohm Anaren C16A50Z4 S1 Directional coupler Anaren X3C21P1-04S Reference Circuit (cont.) RF_OUTRF_IN b201602fc_cd_2014-03-11 RO4350, .020 (60) PXAC201602FC_IN_01 R103 C107 C103 C108 C104 C102 C106 R101 C101 R102 C105 C109 C110 RO4350, .020 (61) PXAC201602FC_OUT_01 C215 C212 C211 C208 C219 C201 C210 C214 C202 C204 C217 C207 C213 PXAC201602FC C216 C218 C203 C209 C205 VDD VDD VGG VGG C206

Data Sheet 7 of 9 Rev. 04.1, 2016-07-19 PXAC201602FC Reference Circuit (cont.) Assembly Information (cont.) Component Description Suggested Manufacturer P/N Output C201, C202, C204, C206, C208, C214, C216, C219 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C218 Capacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) SK221M050ST C205, C210, C211, C212, C215 Chip capacitor, 18 pF ATC ATC800A180JT250T C207 Chip capacitor, 1.5 pF ATC ATC600F1R5BT C209 Chip capacitor, 2.4 pF ATC ATC800A2R4BT250T C213 Chip capacitor, 1.2 pF ATC ATC600F1R2BT C217 Chip capacitor, 2.2 pF ATC ATC800A2R2BT250T Pinout Diagram (top view) Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) S D1 D2 G1 G2 Main Peak

Data Sheet 8 of 9 Rev. 04.1, 2016-07-19 Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 9 of 9 Rev. 04.1, 2016-07-19 Edition 2016-07-19 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC201602FC V1

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2014-02-21 Advance All New product, proposed only 01.1 2014-02-25 Advance 2 Added thermal resistance information 02 2014-03-14 Production All Data Sheet now represents production-released product specificaitons, including reference circuit and performance information 03 2015-05-13 Porduction 1 Change to RF Test Specfications 04 2015-05-31 Production 1, 2 Revised condition for RF test specfications, updated ordering code 04.1 2016-07-19 Production 1 Added features information