PXAC201602FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Asymmetric Doherty design - Main: 55 W Typ (P1dB) - Peak: 85 W Typ (P1dB)
  • Broadband internal matching
  • Pulsed CW performance, 1960 MHz, 28 V - Output power at P1dB = 100 W - Gain = 18 dB - Efficiency = 55%
  • Capable of handling 10:1 VSWR @ 28 V, 140 W (CW) output power
  • Integrated ESD protection
  • Human Body Model Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Can be operated with I DQ of up to 700 mA (not to exceed maximum ratings limits) RF Specifications Single-carrier WCDMA Characteristics (tested in Wolfspeed Doherty test fixture) VDD = 28 V, VGS(PEAk) = 1.4 V, IDQ = 360 mA, POUT = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band- width = 3.84 MHz, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.7 — dB Drain Efficiency hD 41 44 — % Adjacent Channel Power Ratio ACPR — –28 –26 dBc Output PAR @ 0.01% CCDF 1880 MHz OPAR 7.0 — — dB Output PAR @ 0.01% CCDF 2025 MHz OPAR 7.8 — — dB -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Gain (dB), Peak/Average Ratio Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c201602fc-gr1a PXAC201602FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 2PXAC201602FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.175 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.175 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 360 mA VGS 2.5 2.71 2.8 V (peak) VDS = 1.2 V, IDQ = 0 A VGS 0.9 1.2 1.5 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (Doherty, TCASE = 70°C, 100 W CW) RqJC 0.48 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC201602FC V1 R0 PXAC201602FC-V1-R0 H-37248-4, ceramic open-cavity, earless T ape & Reel, 50 pcs PXAC201602FC V1 R250 PXAC201602FC-V1-R250 H-37248-4, ceramic open-cavity, earless T ape & Reel, 250 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 3PXAC201602FC Typical Performance (data taken in a reference test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 Drain Efficiency(%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz and 2025 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW Efficiency ACP Up ACP Low

1880 MHz

2025 MHz

1650 1750 1850 1950 2050 2150 Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain c201602fc-gr3 -35 -30 -25 -20 -15 -10 -30 -25 -20 -15 1650 1750 1850 1950 2050 2150 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm, 3GPP WCDMA signal, 10 dB PAR Return Loss ACP Up c201602fc-gr4 -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Gain (dB), Peak/Average Ratio Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2025 MHz 3GPP WCDMA signal: 10 dB PAR, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF c201602fc-gr1b

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 4PXAC201602FC Typical Performance (cont.) 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 360 mA Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 360 mA, ƒ = 1880 MHz Gain Efficiency 24 V 28 V 32 V c201602fc-gr6a 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 360 mA, ƒ = 2025 MHz Gain Efficiency 24 V 28 V 32 V c201602fc-gr6b -30 -25 -20 -15 -10 1750 1850 1950 2050 2150 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 28 V, IDQ = 360 mA IRL Gain c201602fc-gr7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 5PXAC201602FC Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load SG1 Reference Circuit, tuned for 1800 – 2200 MHz DUT PXAC201602FC V1 Reference Circuit Part No. LTA/PXAC201602FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 6PXAC201602FC Reference circuit assembly diagram (not to scale) Assembly Information Component Description Suggested Manufacturer P/N Input C101, C104, C106, C107 Chip capacitor, 18 pF ATC ATC800A180JT250T C102 Chip capacitor, 0.4 pF ATC ATC600F0R4BT C103 Chip capacitor, 1.6 pF ATC ATC600F1R6BT C105 Chip capacitor, 2.4 pF ATC ATC800A2R4BT250T C108 Chip capacitor, 0.3 pF ATC ATC600F0R3BT C109, C110 Capacitor, 10 µF Taiyo Yuden UMk325C7106MM-T R101, R102 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ100V R103 Resistor, 50 Ohm Anaren C16A50Z4 S1 Directional coupler Anaren X3C21P1-04S Reference Circuit (cont.) RF_OUTRF_IN b 2 0 1 6 0 2 f c _ c d _ 2 0 1 4 - 0 3 - 1 1 RO4350, .020 (60) PXAC201602FC_IN_01 R103 C107 C103 C108 C104 C102 C106 R101 C101 R102 C105 C109 C110 RO4350, .020 (61) PXAC201602FC_OUT_01 C215 C212 C211 C208 C219 C201 C210 C214 C202 C204 C217 C207 C213 PXAC201602FC C216 C218 C203 C209 C205 VDD VDD VGG VGG C206

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 7PXAC201602FC Reference Circuit (cont.) Assembly Information (cont.) Component Description Suggested Manufacturer P/N Output C201, C202, C204, C206, C208, C214, C216, C219 Capacitor, 10 µF Taiyo Yuden UMk325C7106MM-T C203, C218 Capacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) Sk221M050ST C205, C210, C211, C212, C215 Chip capacitor, 18 pF ATC ATC800A180JT250T C207 Chip capacitor, 1.5 pF ATC ATC600F1R5BT C209 Chip capacitor, 2.4 pF ATC ATC800A2R4BT250T C213 Chip capacitor, 1.2 pF ATC ATC600F1R2BT C217 Chip capacitor, 2.2 pF ATC ATC800A2R2BT250T Pinout Diagram (top view) Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) S D1 D2 G1 G2 Main Peak

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02 8PXAC201602FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

www.wolfspeed.comRev. 05, 2018-07-02 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXAC201602FC

Revision History

01 2014-02-21 Advance All New product, proposed only 01.1 2014-02-25 Advance 2 Added thermal resistance information 02 2014-03-14 Production All Data Sheet now represents production-released product specificaitons, including reference circuit and performance information 03 2015-05-13 Porduction 1 Change to RF Test Specfications 04 2015-05-31 Production 1, 2 Revised condition for RF test specfications, updated ordering code 04.1 2016-07-19 Production 1 Added features information 05 2018-07-02 Production All Converted to Wolfspeed Data Sheet