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Document overview

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  • PDF pages: 10

Technical content

Features

  • Broadband internal matching
  • Asymmetric Doherty design - Main: P1dB = 35 W Typ - Peak: P1dB = 80 W Typ
  • Broadband internal matching
  • CW performance in a Doherty configuration,

1805 MHz, 28 V

  • Output power = 100 W P 1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.
  • CW performance in a Doherty configuration,

2100 MHz, 28 V

  • Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%
  • Capable of handling 10:1 VSWR @ 28 V,

16 W (CW) output power

  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Specifications, 1880 MHz One-carrier WCDMA Characteristics (tested in Infineon Doherty test fixture) VDD = 28 V, VGS(peak) = 1.4 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band- width, 10 dB PAR @0.01% probability on CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 43 46 — % Adjacent Channel Power Ratio ACPR — –29 –26 dBc -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz

3.84 MHz bandwidth

PAR @ 0.01% CCDF c201202fc-v2-gr1a

Data Sheet 2 of 10 Rev. 05.1, 2016-06-22 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.3 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 242 mA VGS 2.5 2.69 2.8 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.5 0.7 1.6 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RqJC 0.7 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC201202FC V2 R0 PXAC201202FCV2R0XTMA1 H-37248-4, ceramic open-cavity, earless T ape & Reel, 50 pcs PXAC201202FC V2 R250 PXAC201202FCV2R250XTMA1 H-37248-4, ceramic open-cavity, earless T ape & Reel, 250 pcs RF Specifications, 2140 MHz One-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon Doherty test fixture) VDD = 28 V, VGS(peak) = 1.2 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band- width, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16.0 16.5 — dB Drain Efficiency hD 39 42 — % Adjacent Channel Power Ratio ACPR — –29 –27 dBc

Data Sheet 3 of 10 Rev. 05.1, 2016-06-22 PXAC201202FC Typical Performance (data taken in an Infineon test fixture) -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1842 MHz PAR @ 0.01% CCDF c201202fc-v2-gr1b -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1880 MHz

3.84 MHz bamdwidth

PAR @ 0.01% CCDF c201202fc-v2-gr1c -70 -60 -50 -40 -30 -20 -10 30 35 40 45 50 Drain Efficiency(%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 –1880 MHz,

3.84 MHz bandwidth, 10 dB PAR

1805 MHz

1842 MHz

1880 MHz

Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier 3GPP WCDMA Broadband Performance VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm, PAR = 10 dB PAR Efficiency Gain c201202fc-v2-gr3

Data Sheet 4 of 10 Rev. 05.1, 2016-06-22 Typical Performance (cont.) -35 -30 -25 -20 -15 -10 -45 -40 -35 -30 -25 -20 -15 1650 1750 1850 1950 2050 Input Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier 3GPP WCDMA Broadband Performance VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm, PAR = 10 dB Return Loss ACP Up c201202fc-v2-gr4 0 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 240mA Efficiency Gain c201202fc-v2-gr5 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1805 MHz Gain Efficiency c201202fc-v2-gr6a VDD = 32 V VDD = 28V VDD = 24V 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1842.5 MHz Gain Efficiency c201202fc-v2-gr6b VDD = 32 V VDD = 28V VDD = 24V

Data Sheet 5 of 10 Rev. 05.1, 2016-06-22 PXAC201202FC Typical Performance (cont.) 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1880 MHz Gain Efficiency c201202fc-v2-gr6c VDD = 32 V VDD = 28V VDD = 24V -18 -14 -10 1800 1825 1850 1875 1900 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 350 mA Return Loss Gain c201202fc-v2-gr7 See next page for load pull performance

Data Sheet 6 of 10 Rev. 05.1, 2016-06-22 Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 250 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load SG1 Reference Circuit, 1880 MHz DUT PXAC201202FC V2 Reference Circuit Part No. LTA/PXAC201202FC V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Infineon Web site at (www.infineon.com/rfpower)

Data Sheet 7 of 10 Rev. 05.1, 2016-06-22 PXAC201202FC c 2 0 1 2 0 2 f c _ c d _ 2 0 1 4 - 0 7 - 0 9 RF_OUTRF_IN RO4350, .020 PXAC201202FC_IN_01 (60) R101 C107 C106 C104 C105 (61)RO4350, .020 C108 C109 C103 C102 C216 C213 C215 C202 C210 C217 C214 C209 C211 C203C208 C207 C212 C206 C205 PXAC201202FC_OUT_01 R103 PXAC201202FC C201 VGS C204 VDD VDD C101 C110R102 Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N Input C101 Chip capacitor, 2.2 pF ATC ATC600F2R2CW250T C102, C105, C107 Chip capacitor, 18 pF ATC ATC600F180JW250T C103 Chip capacitor, 1.5 pF ATC ATC600F1R5CW250T C104, C106 Capacitor, 10 µF , 50 V Taiyo Yuden UMK325C7106MM-T C108 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T C109, C110 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T R101, R103 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ R102 Resistor, 50 Ohm Anaren RFP060120A15Z50 U1 Hybrid coupler, 5 dB, 90° Anaren X3C19P1-05S Output C201, C202, C209, C210, C211, C212 Chip capacitor, 18 pF ATC ATC600F180JW250T C203, C207, C208, C213, C215, C216, C217 Capacitor, 10 µF , 50 V Taiyo Yuden UMK325C7106MM-T C204 Capacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) SK221M050ST C205 Chip capacitor, 1.8 pF ATC ATC600F1R8CW250T C206 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T C214 Chip capacitor, 0.5 pF ATC ATC600F0R5CW250T Reference Circuit (cont.)

Data Sheet 8 of 10 Rev. 05.1, 2016-06-22 Pinout Diagram (top view) Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) S D1 D2 G1 G2 Main Peak See next page for package mechanical specifications

Data Sheet 9 of 10 Rev. 05.1, 2016-06-22 PXAC201202FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower) Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2016-06-22 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC201202FC V2

Revision History

Revision Date Data Sheet Page Subjects (major changes in comparison with previous revision) Data Sheet 10 of 10 Rev. 05.1, 2016-06-22 01 2014-02-06 Advance All New product, proposed only. 02 2014-03-07 Production All Data Sheet reflects released product specifications, including reference circuit and performance information. 03 2014-03-12 Production 1, 2, 3, 6 (1) Add features, update graph. (2) Update Operating Gate Voltage. (3) Update two graphs. (6) Add Load Pull tables. 04 2014-06-27 Production All Product now V2. 04.1 2014-08-25 Production 7 Assembly diagram: position of C201 changed. 05 2014-08-25 Production 2 RF Specifications at 2140 MHz: values updated. 05.1 2016-06-22 Production 2 Updated ordering information