PXAC201202FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Asymmetric Doherty design - Main: P1dB = 35 W Typ - Peak: P1dB = 80 W Typ
  • CW performance in a Doherty configuration,

1805 MHz, 28 V

  • Output power = 100 W P 1dB - Gain = 17.3 dB at 17.8 W Avg. - Efficiency = 46% at 17.8 W Avg.
  • CW performance in a Doherty configuration,

2100 MHz, 28 V

  • Output power = 15.8 W Avg. - Gain = 15.5 dB - Efficiency = 46%
  • Capable of handling 10:1 VSWR @ 28 V,

16 W (CW) output power

  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Specifications, 1880 MHz One-carrier WCDMA Characteristics (tested in Wolfspeed Doherty test fixture) VDD = 28 V, VGS(peak) = 1.4 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 1880 MHz. 3GPP WCDMA signal: 3.84 MHz band- width, 10 dB PAR @0.01% probability on CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16 17 — dB Drain Efficiency hD 43 46 — % Adjacent Channel Power Ratio ACPR — –29 –26 dBc -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz

3.84 MHz bandwidth

PAR @ 0.01% CCDF c201202fc-v2-gr1a PXAC201202FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 2PXAC201202FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA On-state Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.3 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 242 mA VGS 2.5 2.69 2.8 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.5 0.7 1.6 V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 65 V Gate-source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RqJC 0.7 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC201202FC V2 R0 PXAC201202FC-V2-R0 H-37248-4, ceramic open-cavity, earless T ape & Reel, 50 pcs PXAC201202FC V2 R250 PXAC201202FC-V2-R250 H-37248-4, ceramic open-cavity, earless T ape & Reel, 250 pcs RF Specifications, 2140 MHz One-carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Wolfspeed Doherty test fixture) VDD = 28 V, VGS(peak) = 1.2 V, IDQ = 240 mA, POUT = 16 W average, ƒ = 2140 MHz. 3GPP WCDMA signal: 3.84 MHz band- width, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 16.0 16.5 — dB Drain Efficiency hD 39 42 — % Adjacent Channel Power Ratio ACPR — –29 –27 dBc

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 3PXAC201202FC Typical Performance (data taken in an Wolfspeed test fixture) -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1842 MHz PAR @ 0.01% CCDF c201202fc-v2-gr1b -60 -40 -20 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1880 MHz

3.84 MHz bamdwidth

PAR @ 0.01% CCDF c201202fc-v2-gr1c -70 -60 -50 -40 -30 -20 -10 30 35 40 45 50 Drain Efficiency(%) ACP Up, ACP Low (dBc) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 –1880 MHz,

3.84 MHz bandwidth, 10 dB PAR

1805 MHz

1842 MHz

1880 MHz

Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier 3GPP WCDMA Broadband Performance VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm, PAR = 10 dB PAR Efficiency Gain c201202fc-v2-gr3

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 4PXAC201202FC Typical Performance (cont.) -35 -30 -25 -20 -15 -10 -45 -40 -35 -30 -25 -20 -15 1650 1750 1850 1950 2050 Input Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier 3GPP WCDMA Broadband Performance VDD = 28 V, IDQ = 240 mA, POUT = 42 dBm, PAR = 10 dB Return Loss ACP Up c201202fc-v2-gr4 0 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 240mA Efficiency Gain c201202fc-v2-gr5 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1805 MHz Gain Efficiency c201202fc-v2-gr6a VDD = 32 V VDD = 28V VDD = 24V 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1842.5 MHz Gain Efficiency c201202fc-v2-gr6b VDD = 32 V VDD = 28V VDD = 24V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 5PXAC201202FC Typical Performance (cont.) 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 240 mA, ƒ = 1880 MHz Gain Efficiency c201202fc-v2-gr6c VDD = 32 V VDD = 28V VDD = 24V -18 -14 -10 1800 1825 1850 1875 1900 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 350 mA Return Loss Gain c201202fc-v2-gr7 See next page for load pull performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 6PXAC201202FC Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 250 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load SG1 Reference Circuit, 1880 MHz DUT PXAC201202FC V2 Reference Circuit Part No. LTA/PXAC201202FC V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 7PXAC201202FC Reference circuit assembly diagram (not to scale) Component Information Component Description Manufacturer P/N Input C101 Chip capacitor, 2.2 pF ATC ATC600F2R2CW250T C102, C105, C107 Chip capacitor, 18 pF ATC ATC600F180JW250T C103 Chip capacitor, 1.5 pF ATC ATC600F1R5CW250T C104, C106 Capacitor, 10 µF , 50 V Taiyo Yuden UMK325C7106MM-T C108 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T C109, C110 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T R101, R103 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ R102 Resistor, 50 Ohm Anaren RFP060120A15Z50 U1 Hybrid coupler, 5 dB, 90° Anaren X3C19P1-05S Output C201, C202, C209, C210, C211, C212 Chip capacitor, 18 pF ATC ATC600F180JW250T C203, C207, C208, C213, C215, C216, C217 Capacitor, 10 µF , 50 V Taiyo Yuden UMK325C7106MM-T C204 Capacitor, 220 µF , 50 V Cornell Dubilier Electronics (CDE) SK221M050ST C205 Chip capacitor, 1.8 pF ATC ATC600F1R8CW250T C206 Chip capacitor, 0.3 pF ATC ATC600F0R3CW250T C214 Chip capacitor, 0.5 pF ATC ATC600F0R5CW250T Reference Circuit (cont.) c 2 0 1 2 0 2 f c _ c d _ 2 0 1 4 - 0 7 - 0 9 RF_OUTRF_IN RO4350, .020 PXAC201202FC_IN_01 (60) R101 C107 C106 C104 C105 (61)RO4350, .020 C108 C109 C103 C102 C216 C213 C215 C202 C210 C217 C214 C209 C211 C203C208 C207 C212 C206 C205 PXAC201202FC_OUT_01 R103 PXAC201202FC C201 VGS C204 VDD VDD C101 C110R102

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 8PXAC201202FC Pinout Diagram (top view) Pin Description D1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak) S Source (flange) S D1 D2 G1 G2 Main Peak See next page for package mechanical specifications

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 06, 2018-06-29 9PXAC201202FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Revision History

Revision Date Data Sheet Type Page Subjects (major changes in comparison with previous revision) 01 2014-02-06 Advance All New product, proposed only. 02 2014-03-07 Production All Data Sheet reflects released product specifications, including reference circuit and performance information. 03 2014-03-12 Production 1, 2, 3, 6 (1) Add features, update graph. (2) Update Operating Gate Voltage. (3) Update two graphs. (6) Add Load Pull tables. 04 2014-06-27 Production All Product now V2. 04.1 2014-08-25 Production 7 Assembly diagram: position of C201 changed. 05 2014-08-25 Production 2 RF Specifications at 2140 MHz: values updated. 05.1 2016-06-22 Production 2 Updated ordering information 06 2018-06-29 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 06, 2018-06-29 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PXAC201202FC