PXAC200902FC CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal input and output matching
  • • Asymmetric Doherty design - Main: P1dB = 35 W Typ - Peak: P1dB = 55 W Typ
  • Typical CW performance, 1920 MHz, 26 V, - Output power at P 1dB = 50 W - Efficiency = 58% - Gain = 16.6 dB
  • Capable of handling 10:1 VSWR @28 V, 90 W (CW) output power
  • Integrated ESD protection
  • ESD Rating: Human Body Model, Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 26 V, IDQ = 230 mA, VGS(peak) = 1.3 V, POUT = 15 W avg, ƒ = 1920 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.2 — dB Drain Efficiency hD 45.0 50.3 — % Adjancent Channel Power Ratio ACPR — –27.0 –25.5 dBc -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF c200902fc-gr1a PXAC200902FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 2PXAC200902FC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current (main & peak) VDS = 28 V, VGS = 0 V IDSS — — 0.1 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current (main & peak) VGS = 10 V, VDS = 0 V IGSS — — 0.1 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.22 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage (main) VDS = 26 V, IDQ = 230 mA VGS 2.15 2.65 3.15 V (peak) VDS = 26 V, IDQ = 0 A VGS 0.80 1.30 1.80 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance Main (TCASE = 70°C, 26 V, IDQ = 230 mA, 15 W CW) RqJC 1.75 °C/W Peak (TCASE = 70°C, 26 V, VGS = 1.3 V, 41 W CW) RqJC 0.76 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PXAC200902FC V1 R0 PXAC200902FC-V1-R0 H-37248-4, ceramic open cavity Tape & Reel, 50 pcs push-pull, earless flange PXAC200902FC V1 R2 PXAC200902FC-V1-R2 H-37248-4, ceramic open cavity Tape & Reel, 250 pcs push-pull, earless flange

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 3PXAC200902FC Typical Performance (data taken in a production Doherty test fixture) -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1900 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF c200902fc-gr1b -60 -40 -20 25 30 35 40 45 50 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1920 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Gain Efficiency PAR @ 0.01% CCDF c200902fc-gr1c -70 -60 -50 -40 -30 -20 -10 29 34 39 44 49 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 26 V, IDQ = 230 mA, ƒ = 1880-1920 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth c200902fc-gr2d Efficiency ACP Up ACP Low 1880 MHz

1900 MHz

1920 MHz

Drain Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 26 V, IDQ = 230 mA, POUT = 41.76 dBm 3GPP WCDMA signal, 10 dB PAR Gain Efficiency c200902fc-gr3

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 4PXAC200902FC Typical Performance (cont.) -30 -25 -20 -15 -10 -35.0 -32.5 -30.0 -27.5 -25.0 -22.5 1750 1850 1950 2050 2150 Input Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 26 V, IDQ = 230 mA, POUT = 41.76 dBm, 3GPP WCDMA signal, 10 dB PAR ACP UP Input Return Loss c200902fc-gr4 25 30 35 40 45 50 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 26 V, IDQ = 230 mA

1880 MHz Gain 1900 MHz Gain

Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 230 mA, ƒ = 1880 MHz Gain Efficiency c200902fc-gr6a VDD = 22 V VDD = 26 V VDD = 30 V 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 230 mA, ƒ = 1900 MHz Gain Efficiency c200902fc-gr6b VDD = 24 V VDD = 28 V VDD = 32 V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 5PXAC200902FC Typical Performance (cont.) 25 30 35 40 45 50 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 230 mA, ƒ = 1920 MHz Gain Efficiency c200902fc-gr6c VDD = 24 V VDD = 28 V VDD = 32 V -25 -20 -15 -10 1825 1875 1925 1975 2025 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 26 V, IDQ = 230 mA Gain Input Return Loss c200902fc-gr7 See next page for load pull information

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 6PXAC200902FC Reference Circuit Assembly, 1880 – 1920 MHz DUT PXAC200902FC V1 Reference Circuit No. LTA/PXAC200902FC V1 Order Code LTA/PXAC200902FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Load Pull Performance Main side load pull, pulsed CW signal: 160 µs, 10% duty cycle, VDD = 28 V, IDQ = 230 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side load pull, pulsed CW signal: 160 µs, 10% duty cycle, VDD = 28 V, IDQ = 280 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Z Source Z Load G D G S D

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 7PXAC200902FC Reference circuit assembly diagram (not to scale) Components Information Component Description Manufacturer P/N In C101, C102, C104 Capacitor, 18 pF ATC ATC600F180JW250T C103 Capacitor, 9.1 pF ATC ATC600F9R1JW250T C105, C106 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 W Panasonic ERJ-8GEYJ100V R103 Resistor, 5.6 W Panasonic ERJ-8RQJ5R6V R104 Resistor, 50 W Anaren C8A50Z4A U1 Hybrid Coupler Anaren X3C19P1-03S Out C201 Capacitor, 15 pF ATC ATC600F150JW250T C202 Capacitor, 0.7 pF ATC ATC600F0R7CW250T C203 Capacitor, 10 pF ATC ATC600F100JW250T C204, C206, C208, C210, C211, C212 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C205, C209 Capacitor, 18 pF ATC ATC600F180JW250T C207, C213 Capacitor, 220 µF Cornell Dubilier Electronics SK221M050ST C214 Capacitor, 1.6 pF ATC ATC600F1R6JW250T Reference Circuit (cont.) C104 C105 R104 R101 C106 C101 C211 C206 C204 C208 C205 C210 C212 RO4350, 20 MIL (61)RO4350, 20 MIL (60) PXAC200902FC_IN_01 PXAC200902FC_OUT_01 2A1306 ANARE N 032 XInge r p x a c 2 0 0 9 0 2 f c _ C D _ 1 0 - 1 6 - 1 5 C102 R103 C213 C103 R102 C202 C203 C201 C214 C207 C209 RF_IN RF_OUT VDD VDD VGS(main) VGS(peak) PXAC200902FC

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 8PXAC200902FC Pinout Diagram (top view) See next page for package outline specifications Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) S D1 D2 G1 G2 Main Peak

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-29 9PXAC200902FC Package Outline Specifications Package H-37248-4 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ± 0.127 [0.005] 4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange) 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. CL LC CL 2X 12.70 [.500] 19.81±0.20 [.780±0.008] 4X 3.81 [.150] LID 9.40 [.370] FLANGE 9.78 [.385] 2X 4.83±0.51 [.190±0.020] 3.76±0.25 [.148±0.010] SPH 1.57 [.062] 4X R0.76+0.13 -0.38 [R.030 +0.005 -0.015 ]D1 D2 G1 G2 1.02 [.040] 20.57 [.810]S 2X 45° X 2.72 [45° X .107] (8.89 [.350]) (5.08 [.200]) 19.43±0.51 [.765±0.020] 0.0381 [.0015] -A-

Revision History

01 2015-06-08 Advance All First Data Sheet for this released product. 02 2015-10-27 Production All Updated and firm specifications for released product. 02.1 2016-02-11 Production All Updated Order Code and Reference Circuit MHz 03 2018-06-29 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 03, 2018-06-29 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTFB213208FV