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Technical content

Features

  • Broadband internal input and output matching
  • Asymmetric Doherty design - Main: P1dB = 120 W Typ - Peak: P1dB = 220 W Typ
  • Typical Pulsed CW performance, 1990 MHz, 28 V, combined outputs - Output power at P 1dB = 240 W - Efficiency = 54% - Gain = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
  • Integrated ESD protection
  • Human Body Model, Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF c192908fc_g1

Data Sheet 2 of 9 Rev. 02.2, 2015-07-14 PXAC192908FV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.11 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.06 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 0.6 A VGS 2.5 2.65 2.75 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.45 0.55 0.75 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (Doherty, TCASE = 70°C, 200 W CW, 1960 MHz, RqJC 0.32 °C/W 28V, IDQ (main) = 600 mA, VGS (peak) = 0.55 V)

Ordering Information

Type and Version Order Code Package Description Shipping PXAC192908FV V1 PXAC192908FVV1XWSA1 H-37275G-6/2, earless flange Tray PXAC192908FV V1 R250 PXAC192908FVV1R250XTMA1 H-37275G-6/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 02.2, 2015-07-14 Typical Performance (data taken in a production Doherty test fixture) 1750 1850 1950 2050 2150 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain c192908fc_g2 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 1750 1850 1950 2050 2150 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm, 3GPP WCDMA signal, PAR = 10 dB Return Loss ACP Up c192908fc_g3 28 32 36 40 44 48 52 56 60 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 28 V, IDQ = 600mA

1930 MHz

1960 MHz

1990 MHz

c192908fc_g5 -60 -50 -40 -30 -20 25 30 35 40 45 50 55 ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 600 mA, 3GPP WCDMA signal, PAR = 10 dB, 10 MHz carrier spacing, BW = 3.84 MHz

1930 ACPL

1930 ACPU

1960 ACPL

1960 ACPU

1990 ACPL

1990 ACPU

c192908fc_g4

Data Sheet 4 of 9 Rev. 02.2, 2015-07-14 PXAC192908FV Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD = 28 V, IDQ = 600 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, VDD =28 V, IDQ = 90 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] -18 -14 -10 1750 1800 1850 1900 1950 2000 2050 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 28 V, IDQ = 750 mA IRL Gain c192908fc_g7 0 28 36 44 52 60 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance at various VDD IDQ = 600 mA, ƒ = 1990 MHz VDD = 24 V VDD = 28 V VDD = 32 V Gain Efficiency c192908fc_g6

Data Sheet 5 of 9 Rev. 02.2, 2015-07-14 Reference Circuit , 1930 – 1990 MHz Reference circuit assembly diagram (not to scale) RF IN RF OUT RO4350_0 .508 (194) PXAC192908FV_OUT_04_DPXAC192908FV_IN_04_D RO4350_0 .508 (61) C102 C101 C103 C105 C104 C106 C108 C107 C109 R102 R101 R103 C205 C204 C206 C208C207 R801R803 C202 C803 C801 C802 R107 R105 R104 R106 C201 C203 C213 C214 C216C215 C209 C211 C212 C210 C217 C229 C230 C221C220 C228 C231 C232 C224 C223 C225 C226 C222 C218 C219 C227 p x a c 1 9 2 9 0 8 f v _ C D _ 1 2 - 0 9 - 2 0 1 4 C110

Data Sheet 6 of 9 Rev. 02.2, 2015-07-14 PXAC192908FV Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC192908FV V1 Test Fixture Part No. LTA/PXAC192908FV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C108, C105 Capacitor, 18 pF ATC ATC600F180JT250X C102, C109 Capacitor, 10 µF Murata LLL31BC70G106MA01L C103 Capacitor, 1 pF ATC ATC600F1R0CT250X C104 Capacitor, 1.2 pF ATC ATC600A1R2CT250X C106 Capacitor, 0.5 pF ATC ATC600F0R5CT250X C107 Capacitor, 1.1 pF ATC ATC600F1R1CT250X C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R104 Resistor, 5600 W Panasonic Electronic Components ERJ-8RQJ5R6V R102, R105 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R103, R106 Resistor, 5.1 W Panasonic Electronic Components ERJ-8GEYJ5R1V R107 Resistor, 50 W Richardson C16A50Z4 R801 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R802 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 5100 W Panasonic Electronic Components ERJ-8GEYJ512V S1 Voltage Regulator Texas Instruments LM78L05ACM S2 Transistor Infineon Technologies BCP56 S3, S4 Potentiometer, 2k W Bourns Inc. 3224W-1-202E U1 Hybrid coupler Anaren X3C19P1-04S Output C201, C202, C203, C204, C205, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C217, C224, C225, C227, C228 Capacitor, 18 pF ATC ATC600F180JT250X C218 Capacitor, 0.5 pF ATC ATC600F0R5CT250X C219 Capacitor, 1.8 pF ATC ATC600F1R8CT250X C220 Capacitor, 0.8 pF ATC ATC600F0R8CT250X C221 Capacitor, 0.4 pF ATC ATC600F0R4CT250X C222, C226 Capacitor, 0.2 pF ATC ATC600F0R2CT250X C223 Capacitor, 1.0 pF ATC ATC600F1R0CT250X C229, C230, C231, 232 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP

Data Sheet 7 of 9 Rev. 02.2, 2015-07-14 Pinout Diagram (top view) Lead connections for PXAC192908FV Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) Main Peak V2V1 D2D1 G1 G2 S

Data Sheet 8 of 9 Rev. 02.2, 2015-07-14 PXAC192908FV Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package H-37275G-6/2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (1.63 [0.064]) 4.58+0.25-0.13 [.180+.010-.005 ] 32.26 [1.270] 31.24±0.28 [1.230±.011] CL S SPH 2.134 [.084] 2X 45° x .64 [.025] 2X 2.29 [.090] (13.72 [.540]) 2X 2.22 [.087] 30.61 [1.205] 2X (1.27 [.050]) 2X 30° LC CLLC 4X R0.51+.38-.13 [R.020+.015-.005 ] 4X 12.45 [.490] CL G1 G2 D2D1V1 2X 26.16 [1.030] (18.24 [.718]) 10.16 [.400] 6X 4.04±0.51 [.159±.020] 9.14 [.360] D

Data Sheet 9 of 9 Rev. 02.2, 2015-07-14 Edition 2015-07-14 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PXAC192908FV V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-06-24 Advance All Data Sheet reflects advance specification for product development 01.1 2014-08-27 Advance 2 Updated main and peak side of pinout diagram, added thermal resistance 01.2 2014-09-24 Advance 2 Updated thermal resistance 02 2014-12-08 Production All Data Sheet reflects released product specification 02.1 2015-01-13 Production 4 Revised IDQ on main side of Load Pull Performance 02.2 2015-07-14 Production 1 Updated P1dB main & peak in Features