DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 120 W Typ - Peak : P1dB = 220 W Typ
  • Typical Pulsed CW performance, 1842.5 MHz, 28 V, combined outputs - Output power at P 1dB = 240 W - Efficiency = 52.6% - Gain = 14.5 dB
  • Capable of handling 10:1 VSWR @28 V, 240 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF pxac182908fc_g1

Data Sheet 2 of 9 Rev. 02.1, 2015-07-29 PXAC182908FV DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 60 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.11 — W On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.06 — W Operating Gate Voltage (main) VDS = 28 V, IDQ = 600 mA VGS 2.45 2.70 2.95 V (peak) VDS = 28 V, IDQ = 0 A VGS 0.45 0.60 0.80 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 56 W CW) RqJC 0.56 °C/W (peak, TCASE = 70°C, 200 W CW) RqJC 0.29 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PXAC182908FV V1 R0 PXAC182908FVV1R0XTMA1 H-37275G-6/2, earless flange Tape & Reel, 50 pcs PXAC182908FV V1 R250 PXAC182908FVV1R250XTMA1 H-37275G-6/2, earless flange Tape & Reel, 250 pcs

Data Sheet 3 of 9 Rev. 02.1, 2015-07-29 Typical Performance (data taken in a production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff pxac182908fc_g2 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1805-1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz

1805 ACPU

1842.5 ACPU

1880 ACPU

1805 ACPL

1842.5 ACPL

1880 ACPL

1805 EFF

1842.5 EFF

1880 EFF

pxac182908fc_g3 1650 1750 1850 1950 2050 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 600 mA, POUT = 48.45 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain pxac182908fc_g4 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 28 V, IDQ = 600 mA

1880 Gain

1842.5 Gain

1805 Gain

pxac182908fc_g5

Data Sheet 4 of 9 Rev. 02.1, 2015-07-29 PXAC182908FV Typical Performance (cont.) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 720 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 100 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] hD [%] -18 -14 -10 1700 1750 1800 1850 1900 1950 2000 2050 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 600 mA IRL Gain pxac182908fc_g7 27 35 43 51 59 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 600 mA, ƒ = 1880 MHz 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff pxac182908fc_g6 Efficiency Gain

Data Sheet 5 of 9 Rev. 02.1, 2015-07-29 Reference Circuit , 1805 – 1880 MHz Reference circuit assembly diagram (not to scale) C226 C228 C201 C204 C217 C209 C216 C227 C213 C218 C214 C212 C203 C211 C208 C202 C206 C210 C222 C221 C220 C205 C207 C225 C224 C223 C215 C219 R801 R803 R804 C801 C803 R802 C802 R805 R105 C109 C103 C105 C110 C108 R103 R101 PXAC182908FV_OUT_02_D RF IN RF OUT VDD p x a c 1 8 2 9 0 8 f v _ C D _ 0 7 - 0 6 - 2 0 1 5 RO4350, .020 (194) PXAC182908FV_IN_02A RO4350, .020 (61) +S3 S1S2 R102 C101C102 C107 C106 C104 R104 C112 C111 C223C231 C230C229 VDD VGSPEAK VGSMAIN

Data Sheet 6 of 9 Rev. 02.1, 2015-07-29 PXAC182908FV Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC182908FV V1 Test Fixture Part No. LTA/PXAC182908FV V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C105, C110, C111 Capacitor, 18 pF ATC ATC100A180JW150XB C102, C112 Capacitor, 10 µF Murata LLL31BC70G106MA01L C103 Capacitor, 1.5 pF ATC ATC100A1R5CW150XB C104 Capacitor, 3.0 pF ATC ATC100A3R0CW150XB C106 Capacitor, 0.4 pF ATC ATC100A0R4CW150XB C107 Capacitor, 1.0 pF ATC ATC100A1R0CW150XB C108 Capacitor, 0.7 pF ATC ATC100A0R7CW150XB C109 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R103 Resistor, 5.1 W Panasonic Electronic Components ERJ-8GEYJ5R1V R102, R104 Resistor, 1K W Panasonic Electronic Components ERJ-8GEYJ102V R105 Resistor, 50 W Richardson RICHARDSON R801 Resistor, 1.3K W Panasonic Electronic Components ERJ-3GEYJ132V R802 Resistor 1.2K W Panasonic Electronic Components ERJ-3GEYJ122V R803, R804, R805 Resistor, 50 W Panasonic Electronic Components ERJ-8GEYJ510V S1 Transistor Infineon Technologies BCP56 S2 Voltage regualtor Texas Instruments LM78L05ACM S3, S4 Potentiometer, 2k W Bourns Inc. 3224W-1-202E U1 Hybrid coupler Anaren X3C19P1-05S Output C201, C202, C203, C204, C205, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216, C217, C218, C219 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C220, C226, C227, C228 Capacitor, 18 pF ATC ATC100A180JW150XB C221 Capacitor, 2.2 pF ATC ATC100A2R2CW150XB C222 Capacitor, 0.3 pF ATC ATC100A0R3CW150XB C223 Capacitor, 1.2 pF ATC ATC100A1R2CW150XB C224 Capacitor, 0.4 pF ATC ATC100A0R4CW150XB C225 Capacitor, 1.1 pF ATC ATC100A1R1CW150XB C229, C230, C231, C232 Capacitor, 220 µF Panasonic Electronic Components EEE-FP1V221AP

Data Sheet 7 of 9 Rev. 02.1, 2015-07-29 Pinout Diagram (top view) Lead connections for PXAC182908FV Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) V2V1 D2D1 G1 G2 S Main Peak

Data Sheet 8 of 9 Rev. 02.1, 2015-07-29 PXAC182908FV Package Outline Specifications Package H-37275G-6/2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (1.63 [0.064]) 4.58+0.25-0.13 [.180+.010-.005 ] 32.26 [1.270] 31.24±0.28 [1.230±.011] CL S SPH 2.134 [.084] 2X 45° x .64 [.025] 2X 2.29 [.090] (13.72 [.540]) 2X 2.22 [.087] 30.61 [1.205] 2X (1.27 [.050]) 2X 30° LC CLLC 4X R0.51+.38-.13 [R.020+.015-.005 ] 4X 12.45 [.490] CL G1 G2 D2D1V1 2X 26.16 [1.030] (18.24 [.718]) 10.16 [.400] 6X 4.04±0.51 [.159±.020] 9.14 [.360] D

Data Sheet 9 of 9 Rev. 02.1, 2015-07-29 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-07-29 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PXAC182908FV V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2015-01-08 Advance All Data Sheet reflects advance specification for product development 01.1 2015-01-29 Advance 2 Updated thermal resistance 02 2015-07-07 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, refer- ence circuit, package outline 02.1 2015-07-29 Production 4 Corrected Drain Eff to PAE in Load Pull tablehead