PX611-2 ROITHNER | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- InGaAs structure
- Spectral width: 1.0 – 1.65 µm
- Active Area: Ø 1mm Absolute Maximum Ratings Item Symbol Value Unit Optical Current IPD 10 mA Forward Current IF 10 mA Reverse Current IR 10 mA ESD threshold 300 V Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -50 … +125 °C Specifications (TC=22°C) Item Value Unit Wavelength Range 1.00 .. 1.65 µm Active Area 1000 µm Responsivity (VR=5V, λ=1.31µm, φE=100µw) >0.95 A/W Capacitance (VR=5V, φE=0, f=1MHz) ≤ 38 pF Dark Current (VR=5V, φE=0) ≤ 2.5 nA Forward Voltage (IF=1mA) ≤ 0.6 V Reverse Breakdown Voltage (ID=10µA, φE=0) ≥ 35 V Rising time (VR=5V ,RL=50Ω) ≤ 4 ns
27.04.2011 PX611-2 2 of 2
Die Size 1290 x 1290 µm Die Thickness 175 +/- 5 µm Bond Pad Diameter 100 µm Photosensitive Area 1000 µm Extended Electrode Length 50 µm P-side material Au N-side material Au Packaging: Chips on gel-pack