PX511-2 ROITHNER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- InGaAs structure
- Spectral width: 1.0 – 1.65 µm
- Active Area: Ø 300µm Absolute Maximum Ratings Item Symbol Value Unit Optical Current IPD 10 mA Forward Current IF 10 mA Reverse Current IR 10 mA ESD threshold >300 V Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -50 … +125 °C Specifications (TC=22°C) Item Value Unit Wavelength Range 1.00 .. 1.68 µm Active Area 300 µm Responsivity (VR=5V, λ=1.31µm, φE=100µw) >0.9 A/W Capacitance (VR=5V, φE=0, f=1MHz) 5-6 pF Dark Current (VR=5V, φE=0) 0.3 – 1.0 nA Forward Voltage (IF=1mA) 0.6 – 0.8 V Reverse Breakdown Voltage (ID=10µA, φE=0) 35 - 40 V Rising time (VR=5V ,RL=50Ω) ≤ 4 ns
27.07.2011 PX511-2 2 of 2
Die Size 500 x 500 µm Die Thickness 175 +/- 5 µm Bond Pad Diameter 75 µm Photosensitive Area 300 µm Extended Electrode Length 16 µm P-side material Au N-side material Au Packaging: Chips on gel-pack