PW550

PW550 SJM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

18.2 dB Gain at 0.9GHz +20 dBm P1dB +38 dBm Output IP3 Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package

Applications

Cellular, PCS, GSM, GPRS, WCDMA, WiBro W-LAN / DMB / ISM CATV / DBS RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 The PW550 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The amplifier features high linear performance, wideband operation, and high reliability. The PW550 operates from a single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation. The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable plastic SOT-89 packages.

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

75 MHz

900 MHz

1900 MHz

2300 MHz

2600 MHz

19.0 18.2 17.2 16.2 15.5 S11 Input Return Loss dB -24 -21 -14 -16 -12 S22 Output Return Loss dB -20 -35 -11 P1dB Output Power @1dB compression dBm OIP3 Output Third Order intercept dBm 38.0 37.5 34.5 33.1 32.4 NF Noise Figure dB 3.4 3.5 3.7 3.8 3.9 V / I Device voltage / current V/mA 5.35/85 Rth Thermal Resistance °C/W 61 Tj Junction Temperature °C 117 Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=7.4ohm, 50ohm System, OIP3 measured with two tones at an output power o f +3dBm/tone separated by 1MHz.

http://www.prewell.com April 2014 Typical RF Performance for 1.9GHz Tuned Application Circuit Supply Bias Voltage = 6V, R(bias)= 7.4 ohm, Current= 85mA 24 Gain vs. Frequency Gain(dB) Frequency(GHz) +25 o C -40 o C +85 o C -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(GHz) +25 o C -40 o C +85 o C -60 -50 -40 -30 -20 -10

0 Output Return Loss

S22(dB) Frequency(GHz) +25 o C -40 o C +85 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(GHz) +25 o C -40 o C +85 o C P1dB vs. Frequency P1dB(dBm) Frequency(GHz) +25 o C -40 o C +85 o C NF vs. Frequency NF(dB) Frequency(GHz) +25 o C -20 -16 -12 -8 -4 0 4 8 Output Power / Gain vs. Input Power @ 1.9GHz OutPut Power(dBm)/ Gain(dB) Input Power(dBm) Gain Output Power -20 -16 -12 -8 -4 0 4 8 Output Power / Gain vs. Input Power @ 0.9GHz OutPut Power(dBm)/ Gain(dB) Input Power(dBm) Gain Output Power 4 6 8 10 12 14 -70 -65 -60 -55 -50 -45 -40 IS-95, 9 Ch.Forward, 30 kHz Meas BW, +/- 885 kHz offset ACPR IS-95A vs. Channel Power ACPR(dBc) Output Channel Power(dBm) freq=1.9GHz Frequency MHz 500 900 1500 1900 2300 2600 3000 S11 dB -14 -21 -18 -14 -12 -12 -12 S22 dB -15 -35 -15 -11 -9 -8 -8 P1dB dBm 20 20 19 19 18 17 16.0

http://www.prewell.com April 2014 1.9GHz Tuned Application Circuit Recommended Bias Values Supply Voltage R bias Value Size 6 V 7.4 Ω 0805 7 V 19.2 Ω 1210 8 V 30.9 Ω 1210 9 V 42.7 Ω 2010 10 V 54.5 Ω 2010 12 V 78.0 Ω 2512 Frequency MHz 75 125 300 500 S21 : Gain dB 19.0 19.0 18.8 18.7 S11 : Input Return Loss dB -24 -27 -30 -29 S22 : Output Return Loss dB -20 -22 -21 -18 Output P1dB dBm 20 20 20 20 Output IP3 @3dBm dBm 38.0 38.5 38.0 37.0 Noise Figure dB 3.4 3.4 3.4 3.4 Typical RF Performance for 50 - 500MHz Tuned Application Circuit Supply Bias Voltage = 6V, R(bias)= 7.4 ohm, Current= 85mA 100 200 300 400 500 600 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 100 200 300 400 500 600 -40 -30 -20 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 100 200 300 400 500 600 -30 -24 -18 -12 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C

http://www.prewell.com April 2014 Frequency 3500MHz S21 : Gain 16.0 dB S11 : Input Return Loss -11 dB S22 : Output Return Loss -10 dB Output P1dB 17 dBm Output IP3 @ 3dBm 29 dBm Supply Voltage 6 V Current 85 mA Typical RF Performance for 3.5GHz Tuned Application Circuit Test Board Information : Rogers 4350B PCB (Dielectric Constant = 3.48, thick = 0.8mm(32mil)) 3000 3200 3400 3600 3800 4000 Gain vs. Frequency Gain(dB) Frequency(MHz) S21 3000 3200 3400 3600 3800 4000 -25 -20 -15 -10 Return Loss S11(dB)/S22(dB) Frequency(MHz) S11 S22

http://www.prewell.com April 2014 Typical RF Performance for 45 -1000MHz CATV Application(75Ω)(1) Frequency MHz 50 450 870 S21 : Gain dB 18.2 18.4 18.4 S11 : Input Return Loss dB -9 -13 -22 S22 : Output Return Loss dB -10 -15 -19 Output P1dB dBm 20 20 20 Output IP3(2) dBm 38 37 37 Composite Second Order, CSO(3) dBc 65 68 66 Composite Triple Beat, CTB(3) dBc 76 74 71 Cross Modulation, XMOD(3) dBc 74 71 71 Noise Figure dB 3.4 3.4 3.4 Current mA 85 1.Test Conditions : T=25°C, Supply Voltage=+6V, Rbias=7.4ohm, 75ohm System 2. OIP3 measured with two tones at an output power of +5dBm/tone separated by 1MHz. 3. 132 channels, 50-870MHz, +18dBmV/channel flat loading 4. Supply Voltage and R bias are refer to ‘Recommended Bias Values’ on page 3. 5. RF Choke is about 8.3uH. We recommend that wire of 0.2 phi radius wind 7 turns on toroidal core(size:4.0x1.5x2.0) 6. Measurement for our data sheet was made on 1.6mm thick FR-4 Board. And 75 ohm microstrip line 200 400 600 800 1000 17.5 18.0 18.5 19.0 19.5 Gain vs. Frequency S21(dB) Frequency(MHz) - 40 o C +25 o C +85 o C 200 400 600 800 1000 -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) - 40 o C +25 o C +85 o C 200 400 600 800 1000 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) - 40 o C +25 o C +85 o C 0 100 200 300 400 500 600 700 800 900 -90 -84 -78 -72 -66 -60 -54 132 channels, +18dBmV/channel flat loading CSO/CTB/XMOD vs. Freq dBc Frequency(MHz) CTB XMD CSO RF IN RF OUT10nF 10nF RF Choke(5) 10nF 1uF Supply Voltage (4) RBIAS (4)

http://www.prewell.com April 2014 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +8 V Supply Current 200 mA RF Power Input 10 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Product Code Lot Number