PH335

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Document overview

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Technical content

Features

+26.3 dBm P1dB +42.5 dBm Output IP3 Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package

Applications

PCS, WCDMA, WiBro W-LAN / ISM RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 The PH335 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH335 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

1775 MHz

1950 MHz

2140 MHz

2400 MHz

15.7 14.9 13.7 12.6 S11 Input Return Loss dB -18 -18 -14 -21 S22 Output Return Loss dB -17 -12 -10 -11 P1dB Output Power @1dB compression dBm 26.0 26.3 26.6 25.8 OIP3 Output Third Order intercept dBm 43.0 42.4 42.0 44.0 NF Noise Figure dB 2.8 2.9 2.9 3.1 V / I Device voltage / current V/mA 5/118 Rth Thermal Resistance °C/W 53 Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +7dBm/tone separated by 1MHz.

High Linearity InGaP HBT Amplifier http://www.prewell.com September 2010 Frequency 1775 MHz S21 : Gain 16.0 dB S11 : Input Return Loss -20 dB S22 : Output Return Loss -19 dB Output P1dB + 26.0 dBm Output IP3 @7dBm + 43.3 dBm Noise Figure 2.8 dB Supply Voltage 5 V Current 118mA

1775 MHz Application Circuit

+5 V 1uF 20pF 22nH 1.8pF 2pF 20pF20pF 2pF 1675 1725 1775 1825 1875 -35 -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1675 1725 1775 1825 1875 -30 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=1775MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 1675 1725 1775 1825 1875 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 1675 1725 1775 1825 1875 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1675 1725 1775 1825 1875 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1675 1725 1775 1825 1875 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com September 2010 Frequency 1950 MHz S21 : Gain 15.2 dB S11 : Input Return Loss -20 dB S22 : Output Return Loss -14 dB Output P1dB + 26.3 dBm Output IP3 @7dBm + 42.7 dBm Noise Figure 2.9 dB Supply Voltage 5 V Current 118 mA

1950 MHz Application Circuit

+5 V 1uF 20pF 22nH 1.2pF 1.8pF 20pF20pF 1.8pF 1850 1900 1950 2000 2050 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 -30 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 1850 1900 1950 2000 2050 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=1950MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o

High Linearity InGaP HBT Amplifier http://www.prewell.com September 2010 Frequency 2140 MHz S21 : Gain 14.0 dB S11 : Input Return Loss -16 dB S22 : Output Return Loss -11 dB Output P1dB + 26.6 dBm Output IP3 @7dBm + 42.3 dBm Noise Figure 2.9 dB Supply Voltage 5 V Current 118 mA

2140 MHz Application Circuit

+5 V 1uF 20pF 22nH 0.75pF 1.2pF 20pF20pF 1.8pF 2050 2100 2150 2200 2250 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1850 1900 1950 2000 2050 -30 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2050 2100 2150 2200 2250 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2050 2100 2150 2200 2250 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2140MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 2050 2100 2150 2200 2250 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com September 2010 Frequency 2400 MHz S21 : Gain 12.9 dB S11 : Input Return Loss -23 dB S22 : Output Return Loss -12 dB Output P1dB + 25.8 dBm Output IP3 @7dBm + 44.3 dBm Noise Figure 3.1 dB Supply Voltage 5 V Current 118 mA

2400 MHz Application Circuit

+5 V 1uF 20pF 22nH 0.75pF 1pF 20pF20pF 1.5pF 2300 2350 2400 2450 2500 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2300 2350 2400 2450 2500 -30 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2300 2350 2400 2450 2500 -30 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2300 2350 2400 2450 2500 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2300 2350 2400 2450 2500 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 Freq=2400MHz, +7dBm/tone OIP3 vs. Temperature OIP3(dBm) Temperature( o 2300 2350 2400 2450 2500 50 +7dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C

High Linearity InGaP HBT Amplifier http://www.prewell.com September 2010 Lead-free /RoHS Compliant / Green SOT-89 Package Outline Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Absolute Maximum Ratings Parameter Rating Unit Device Voltage +6 V Device Current 175 mA RF Power Input 12 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Junction Temperature 175 °C Operation of this device above any of these parameters may cause permanent damage.