PEMD9 NEXPERIA | Alldatasheet
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Technical content
Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
1.1 General description
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Table 1. Product overview Table 2. Quick reference data
Table 3. Pinning
1 GND (emitter) TR1
4 GND (emitter) TR2
Table 4. Ordering information Table 5. Marking codes
[2] Reflow soldering is the only recommended soldering method. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
[1] Device mounted on an FR4 PCB, single-si ded copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 7. Thermal characteristics
Product data sheet Rev. 6 — 22 November 2011 5 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PEMD9 (SOT666); typical values FR4 PCB, standard footprint Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for PUMD9 (SOT363); typical values 006aac751 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 006aac750 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
Table 8. Characteristics Tamb =2 5 C unless otherwise specified.
Product data sheet Rev. 6 — 22 November 2011 7 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k VCE =5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 5. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE =0 . 3V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C VCE =5V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C Fig 6. TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 7. TR1 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102101 006aac784 102 103 hFE (1) (2) (3) 006aac785 IC (mA) 10-1 102101 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aac786 IC (mA) 10-1 102101 VI(on) (V) 10-1 (1) (2) (3) IC (mA) 10-1 101 006aac787 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 6 — 22 November 2011 8 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k f=1M H z ; Tamb =2 5 CV CE =5V ; Tamb =2 5 C Fig 8. TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values Fig 9. TR1 (NPN): Transition frequency as a function of collector current; typical values of built-in transistor VCE = 5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C Fig 10. TR2 (PNP): DC current gain as a function of collector current; typical values Fig 11. TR2 (PNP): Collecto r-emitter saturation voltage as a function of collector current; typical values VCB (V) 05 0 4020 3010 006aac788 C c (pF) 006aac757 IC (mA) 10-1 102101 102 103 fT (MHz) IC (mA) -10-1 -102-10-1 006aac789 102 103 hFE (1) (2) (3) 006aac790 IC (mA) -10-1 -102-10-1 -10-1 VCEsat (V) -10-2 (1) (2) (3)
Product data sheet Rev. 6 — 22 November 2011 9 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k VCE = 0.3 V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C VCE = 5V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C Fig 12. TR2 (PNP): On-state input voltage as a function of collector current; typical values Fig 13. TR2 (PNP): Off-state input voltage as a function of collector current; typical values f=1M H z ; Tamb =2 5 CV CE = 5V ; Tamb =2 5 C Fig 14. TR2 (PNP): Collector capacitance as a function of collector-base voltage; typical values Fig 15. TR2 (PNP): Transition frequency as a function of collector current; typical values of built-in transistor 006aac791 IC (mA) -10-1 -102-10-1 -10 VI(on) (V) -10-1 (1) (2) (3) IC (mA) -10-1 -10-1 006aac792 -10 VI(off) (V) -10-1 (1) (2) (3) VCB (V) 006aac7937 Cc (pF) 006aac763 IC (mA) -10-1 -102-10-1 102 103 fT (MHz)
8.1 Quality information
suitable for use in automotive applications. [1] For further information and the availability of packing methods, see Section 14. Table 9. Packing methods
Product data sheet Rev. 6 — 22 November 2011 11 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 11. Soldering Reflow soldering is the only recommended soldering method. Fig 18. Reflow soldering footprint PEMD9 (SOT666) solder lands placement area occupied area solder paste sot666_fr 2.75 2.45 2.1 1.6 0.4 (6×) 0.55 (2×) 0.25 (2×) 0.6 (2×) 0.65 (2×) 0.3 (2×) 0.325 (4×) 0.45 (4×) 0.5 (4×) 0.375 (4×) 1.7 2 1.7 1.075 0.538 Dimensions in mm
Product data sheet Rev. 6 — 22 November 2011 12 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Fig 19. Reflow soldering footprint PUMD9 (SOT363) Fig 20. Wave soldering footprint PUMD9 (SOT363) solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2×) 0.6 (2×) 0.5 (4×) 0.5 (4×) 0.6 (4×) 0.6 (4×) 1.5 1.8 Dimensions in mm sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 Dimensions in mm
Table 10. Revision history guidelines of NXP Semiconductors.
- Legal texts have been adapted to the new company name where appropriate.
- Section 1 “Product profile”: updated
- Section 4 “Marking”: updated
- Figure 1 to 15: added
- Section 5 “Limiting values”: updated
- Section 6 “Thermal characteristics”: updated
- Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to VI(off) off-state input voltage, ICEO updated, fT added
- Section 8 “Test information”: added
- Section 9 “Package outline”: superseded by minimized package outline drawings
- Section 10 “Packing information”: added
- Section 11 “Soldering”: added
- Section 13 “Legal information”: updated PEMD9_PUMD9 v.5 20040415 Product data sheet - PEMD9_PUMD9 v.4 PEMD9_PUMD9 v.4 20031104 Produ ct specification - PEMD9 v.2 PUMD9 v.3 PEMD9 v.2 20020905 Product specification - PEMD9 v.1 PEMD9 v.1 20011022 Preliminary specification - - PUMD9 v.3 20010216 Product specification - PUMD9 v.2 PUMD9 v.2 19990520 Product specification - PUMD9 v.1 PUMD9 v.1 19990107 Product specification - -
Product data sheet Rev. 6 — 22 November 2011 14 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k 13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 6 — 22 November 2011 15 of 16 NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 November 2011 Document identifier: PEMD9_PUMD9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 15. Contents