PUB4701 PANASONIC | Alldatasheet
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Power Transistor Arrays (F-MOS FETs) unit: mm PUB4701 Silicon N-Channel Power F-MOS FET n Features l Avalanche energy capacity guaranteed l High-speed switching l Low ON-resistance l No secondary breakdown l Low-voltage drive n Applications l Contactless relay l Diving circuit for a solenoid l Driving circuit for a motor l Control equipment l Switching power supply G: Gate D: Drain S: Source 10-Lead Plastic SIL Package n Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Symbol IDSS IGSS V DSS V th R DS(on)1 R DS(on)2 | Yfs | V DSF C iss C oss C rss td(on) tr tf td(off) Conditions V DS = 120V, VGS = 0 V GS = ±20V, VDS = 0 ID = 1mA, VGS = 0 V DS = 10V, ID = 1mA V GS = 10V, ID = 3A V GS = 4V, ID = 3A V DS = 10V, ID = 3A IDR = 3A, VGS = 0 V DS = 10V, VGS = 0, f = 1MHz V GS = 10V, ID = 3A V DD = 100V, RL = 33.3W min 150 typ 0.42 0.5 5.3 620 120 290 max 2.5 0.6 0.7 -1.7 Unit mA mA V V W W S V pF pF pF ns ns ns ns 25.3±0.2 8.0 9.5±0.2 1.65±0.2 4.4±0.5 4.0±0.2 2.54±0.2 0.8±0.25 95 2.54=22.86±0.25 0.5±0.151.0±0.25 0.5±0.15 C1.5±0.5 13572468 91 0 n Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse T C = 25°C Ta = 25°C Symbol V DSS V GSS ID IDP EAS * PD Tch Tstg Ratings 150 ±20 ±12 22.5 3.5 150 -55 to +150 Unit V V A A mJ W * L = 5mH, IL = 3A, 1 pulse
Power Transistor Arrays (F-MOS FETs) PUB4701 Area of safe operation (ASO) P D ¾ Ta I D ¾ VDS ID ¾ VGS R DS(on) ¾ ID 1001033 0 0.1 0.3 Non repetitive pulse TC =25˚C IDP t=1ms 10ms 50ms ID Drain to source voltage VDS (V) Drain current ID (A) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (1) (2) (3) Ambient temperature Ta (˚C) Allowable power dissipation PD (W ) 02 0 1641 2 8 TC =25˚C 3.5V 3.0V 4.0V 2.5V Drain to source voltage VDS (V) Drain current ID (A) 01 2 10826 4 VDS =10V TC =25˚C Gate to source voltage VGS (V) Drain current ID (A) 06 5413 2 1.2 1.0 0.8 0.6 0.4 0.2 VGS =4V 10V TC =25˚C Drain current ID (A) Drain to source ON-resistance RDS(on) (m W )