PU4220 PANASONIC | Alldatasheet
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Power Transistor Arrays PU3220, PU4220, PU4520 Eee ae AO, PU 4220, PUSS 20 PU3220, PU4220, PU4520 = acisoe mension ’ ’ [uso Silicon NPN Epitaxial Planar Darlington Type |g 20Smax = Stee Power Amplifier, Switching el J | Complementary Pair-with PU3120, PU4120, PU4420 E Wy ees Lo § Features * Lo stiy uths | © High DC current gain (hre) Crs agg et IT TBE 0.25 | ¢ High speed switching | ¢ PU3220: 3 NPN elements 12345678 * PU4220: 4 NPN elements : EBCBCBCE :. © PU4520: 2 NPN elements (4 elements in total) E Emitter C! Collector H Absolute Maximum Ratings (Tc=25°C) __ Stead Plastic SIL Package PU4220 Unit:mm 25.5max. 4.2max. Collector-base voltage 60 vo er Collector-emitter voltage -60 Vv idl A) Emitter-base voltage VeBo —5 Vv lien ot Peak collector current “Tep ~ -8 A 2 ia SOLS =e Collector current Tc =4 A | en Loeey | 5075 Power dissipation SS 5 Y og oot BEF 0.25 Junction temperature T, _ 150 Cc arrersrrsy Storage temperature —55~ +150 c : Ebopenebee E: Emitter B: Base C! Collector 10-Lead Plastic SIL pile @ Electrical Characteristics (Tc=25°C) Teno Vop= —60V, Ip=0 ; | [200] wa Collector cutoff current Tero Vcp=—30V, In=0 —500 | uA Emitter cutoff current Tepo Vep= —5V, Ic=0 | =2 | mA = Collector-emitter voltage Vero Ic=—30mA, Ip=0 =|) | v = ie nara heer | Ver=—3V, Ie=—05A 1000; | | = current gain ~ SF — ae bree" | Vor® 7 8V, lo=~3A 3000 [| 10000 | base-emitter voltage Vpe Vee =—3V, Ic=—3A j | Vv Jollector-emitter saturation voltage | Veruw | Ie=—3A,Ip=—12mA -2) Vv Transition frequency Ver= —10V, Ic=—0.5A, f= 1MHz || as MHz Tim-on time ton ~ - [| 0.3 [| us Storage time tue | Io ~8A, T= 12mA, Ipe=2_ma [| a) ms fall time ho 05 | | as ‘hreo Classifications : Class Free -~Q P heve | 1000~ 10000 2000~ 10000 eee —1035— Panasonic