PU3219 PANASONIC | Alldatasheet
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I SSSTTSS:~S~CCN Power Transistor Arrays PU3219, PU4219, PU4519 PU3219, PU4219, PU4519 ne . . : @ Package Dimensions Silicon NPN Epitaxial Planar Darlington Type mang Unicman Power Amplifier, Switching ae 20.5max. ee Complementary Pair with PU3119, PU4119, PU4419 BG : U Sle By @ Features E oe . : 0.5+0.15 i © Low DC current gain (hrs) Sj fe ovo — sab 2540.2 9.54015 ¢ High speed switching ee © PU3219: 3 NPN elements C15 +05 | © PU4219: 4 NPN elements : is 12345678 © PU4519: 2 NPN elements x 2 (4 elements in total) EBCBCBCE q : E: Emitter : F . 3 | B: Base | @ Absolute Maximum Ratings (Tc=25°C) C: Collector 8-Lead Plastic SIL Package PU4219 Unit!mm I = j 25.5max. 4.2max. | Collector-emitter voltage 60 V ra “a | Emitter-base voltage y Ele Peak: collector current Icp A | 3 Z _ lL. ee 0840.95 | Collector current Co a A eS) _[phoszos “L | Power dissipation [Peas ow ) Lee) cal Storage temperature —55~ +150 Cc i 12345678910 EBCBCBCBCE E: Emitter : B: Base . . | ‘ Cc: Elen . vgs 10-Lead Plastic SIL Packa @ Electrical Characteristics (Tc=25°C) Rachael Item Symbol Unit Collector cutoff current goo | Veo== 60 at _ Toxo Vor= ~30V, Ip=0 aa Collector-ernitter voltage Vero Ic= ~30mA, In=0 j-ol | fv = Vce= —4V. = . DC current gain Vor= ~4V, Ios ~1A tooo fT | ; be: | brEe* Vee =—4V, Ic=—2A 1000 10000 ‘Base-emitter voltage Voe=—4V, Ic=—2A a Collector-emitter saturation voltage VCE (sat) Ic=—2A, p= —8mA j | -2.5 Vv Transition frequency Voe=—10V, [c= —0.5A, f= 1MHz 20 MHz Fall time pos as ‘hre2 Classifications Class | Fre [| Q@ - |]. P hre2_|1000~10000| 1000~5000 [5000~10000 —1033— Panasonic