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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Broadband input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 µS, 10% duty cycle. RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 150 mA per side, POUT = 700 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16 — dB Drain Efficiency hD 50 56 — % Gain Flatness DG — 1.0 1.3 dB Return Loss IRL — –20 –11 dB 30 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle

1200 MHz

1300 MHz

1400 MHz

a127002ev_g1-1 Output Power Efficiency

Data Sheet 2 of 11 Rev. 03.1, 2015-06-18 DC Characteristics (single side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 700 W CW) RqJC ~0.36 °C/W RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA per side, Input signal (tr = 7 ns, tf = 5 ns), 300 µs pulse width, 12% duty cycle, class AB test Mode of Operation ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) @ P1dB tr (ns) @P1dB tf (ns) @P1dBGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) 300 µs, 12% Duty Cycle 1200 –20 16.6 57 710 14.6 57 810 0.2 5 <2 1300 –16 15.8 54 840 13.8 55 950 0.3 5 <2 1400 –20 15.7 54 730 13.7 53 820 0.2 5 <2 Typical RF Performance (tested on LTN/PTVA127002EV E5 Infineon test fixture) VDD = 50 V, IDQ = 150 mA per side, Input signal (tr = 7 ns, tf = 5 ns), 32 ms pulse width, 50% duty cycle, class AB test Mode of Operation Compression ƒ (MHz) PIN (dBm) Gain (dB) IRL (dB) I (A) Eff (%) POUT (dBm) POUT (W) 32 ms, 50% Duty Cycle P

Data Sheet 3 of 11 Rev. 03.1, 2015-06-18 PTVA127002EV

Ordering Information

Type and Version Order Code Package Description Shipping PTVA127002EV V1 PTVA127002EVV1XWSA1 H-36275-4, bolt-down Tray PTVA127002EV V1 R250 PTVA127002EVV1R250XTMA1 H-36275-4, bolt-down Tape & Reel, 250 pcs See next page for Typical RF Performance

Data Sheet 4 of 11 Rev. 03.1, 2015-06-18 Typical RF Performance (data taken in production test fixture) 30 32 34 36 38 40 42 44 46 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle a127002ev_g1-2 Gain 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50 V, IDQ = 300 mA, POUT = 700 W, 300 µs pulse width, 12% duty cycle a127002ev_g1-3 Efficiency Gain 0.0 0.1 0.2 0.3 0.4 -30 -25 -20 -15 -10 1150 1200 1250 1300 1350 1400 1450 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50 V, IDQ = 300 mA, POUT = 700 W, 300 µs pulse width, 12% duty cycle Power Droop a127002ev_g1-4 IRL 30 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle a127002ev_g1-1 Output Power Efficiency

Data Sheet 5 of 11 Rev. 03.1, 2015-06-18 PTVA127002EV Typical RF Performance (cont.) 30 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 2 ms pulse width, 10% duty cycle a127002ev_g2-1 30 32 34 36 38 40 42 44 46 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 2 ms pulse width, 10% duty cycle a127002ev_g2-2 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50 V, IDQ = 300 mA, POUT = 700W, 2 ms pulse width, 10% duty cycle a127002ev_g2-3 Gain Efficiency 0.0 0.1 0.2 0.3 0.4 -30 -25 -20 -15 -10 1150 1200 1250 1300 1350 1400 1450 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50 V, IDQ = 300 mA, POUT = 700 W, 2 ms pulse width,10% duty cycle Power Droop a127002ev_g2-4 IRL

Data Sheet 6 of 11 Rev. 03.1, 2015-06-18 Typical RF Performance (cont.) 30 32 34 36 38 40 42 44 46 48 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 16 ms pulse width, 20% duty cycle a127002ev_g3-1 12 30 32 34 36 38 40 42 44 46 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 16 ms pulse width, 20% duty cycle a127002ev_g3-2 Gain 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50 V, IDQ = 300 mA, POUT = 700 W, 16 ms pulse width, 20% duty cycle Gain Efficiency a127002ev_g3-3 0.1 0.2 0.3 0.4 0.5 -30 -25 -20 -15 -10 1150 1200 1250 1300 1350 1400 1450 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RFPerformance VDD = 50 V, IDQ = 300 mA, POUT = 700 W, 16 ms pulse width, 20% duty cycle a127002ev_g3-4 IRL Power Droop

Data Sheet 7 of 11 Rev. 03.1, 2015-06-18 PTVA127002EV Broadband Circuit Impedance Z Source Z Load G S D Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull Performance (single side) Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Freq [MHz] Z Source W Z Load W R jX R jX 1200 0.84 –1.27 0.90 –0.97 1300 0.97 –1.06 0.72 –0.47 1400 1.35 –1.12 0.63 0.03

Data Sheet 8 of 11 Rev. 03.1, 2015-06-18 Reference Circuit , 1200 – 1400 MHz Reference circuit assembly diagram (not to scale) C102 RF_IN RF_OUT VDD VDD p t v a 1 2 7 0 0 2 e v _ C D _ 1 1 - 0 7 - 2 0 1 3 C101 C103 C105 C104 C106 C107 C109 R102R101 C206 C207 R201 R802 R801 R803 R804 R806 C202 C201 C210 C110 C111 C112 S4R807 C805 S5S6R805 C108 R808 R106 C804 R103 C806 R104 R105 C802 C803 C801 C113 PTVA127002EV_IN_03 C205 C204 C203 PTVA127002EV_OUT_03 RO3010, .025 (62) RO3010, .025 (62) C208 C211 C212 R202 C209

Data Sheet 9 of 11 Rev. 03.1, 2015-06-18 PTVA127002EV Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA27002EV V1 Test Fixture Part No. LTN/PTVA127002EV V1 PCB Rogers 3010, 0.635mm [0.025”] thick, 2 oz. copper, εr = 10.2, ƒ = 1930 – 1990 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Suggested Manufacturer P/N Input C101, C102, C108, C109 Capacitor, 39 pF ATC ATC100B390KW500XB C103, C110 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C104, C107 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C105, C112, C113 Capacitor, 56 pF ATC ATC100B560JW500XB C106 Capacitor, 3.9 pF ATC ATC800A3R9CW250 C111 Capacitor, 6.2 pF ATC ATC100A6R2CW150XB C801, C802, C803, C804, C805, C806 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R105 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R102, R106 Resistor, 5.6 W Panasonic Electronic Components ERJ-8GEYJ5R6V R103, R104, R804, R808 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801, R805 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R802, R807 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R803, R806 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V S1, S4 Transistor Infineon Technologies BCP56 S2, S5 Voltage Regulator National Semiconductor LM7805 S3, S6 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C202 Capacitor, 2.2 µF ATC ATC100B2R2CW500 C203 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C204 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C205 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C206, C212 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C207, C211 Capacitor, 39 pF ATC ATC100B390KW500 C208 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA C209 Capacitor, 56 pF ATC ATC100B560JW500 R201, R202 Resistor, 5.6 W Panasonic Electronic Components ERJ-8RQJ5R6V

Data Sheet 10 of 11 Rev. 03.1, 2015-06-18 Package Outline Specifications Package H-36275-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower S 35.56 [1.400] 4X 11.68 [.460] CL 2X 45° X 1.19 [45° X .047] 10.16 [.400] 9.144 [.360] C LC 2x 2.03 [.080] REF 13.72 [.540] 16.612±0.500 [.654±.020] 2X R1.59 [R.062] 3.23±0.51 [.127±.020] 8X R0.51+0.13 -0.51 [R.020+.005 -.020 ] LC L 41.15 [1.620] 31.242±0.280 [1.230±.011]1.63 [.064] 2.13 [.084] SPH C LCLC L 4.58+0.25 -0.13 .180+.010 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 11 of 11 Rev. 03.1, 2015-06-18 PTVA127002EV V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-10-01 Advance All Data Sheet reflects advance specification for product development 02 2014-03-04 Preliminary All Data Sheet reflects preliminary specification 02.1 2014-09-30 Preliminary 2 Added LTN/PTVA127002EV E5 test fixture 03 2014-11-11 Production All Data Sheet reflects released product specifications Includes Reference Circuit 03.1 2015-06-18 Production 8 Corrected frequency range