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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 14
Technical content
Features
- Broadband internal input and output matching
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Excellent ruggedness
- Pb-free and RoHS compliant
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dBm 30 32 34 36 38 40 42 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle
1200 MHz
1300 MHz
1400 MHz
a123501ec_g1-1 RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V , IDQ = 0.15 A, POUT = 350 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency hD 54 55 — % Return Loss IRL — –12 –9 dB PTVA123501FC Package H-37248-2
Data Sheet 2 of 14 Rev. 05.1, 2016-04-26 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 300 W CW) RqJC 0.34 °C/W Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA, 30 ms pulse width, 30% duty cycle, class AB test Mode of Operation ƒ (MHz) P1dB P3dB Pdroop (pulse) dB @ 300 WGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 16 47 316 14 48 350 0.23 Pulsed RF 1300 16 47 324 14 48 355 0.25 Pulsed RF 1400 15.5 45 315 13.5 47 355 0.29 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test Mode of Operation ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) dB @ 350 W tr (ns) @ 350 W tf (ns) @
350 WGain
(dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 –14 16.2 59 375 14.2 59 415 0.10 4 5< Pulsed RF 1300 –14 16.0 59 390 14.0 59 435 0.15 4 5< Pulsed RF 1400 –12 15.8 56 375 13.8 57 415 0.15 4 5<
Data Sheet 3 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC
Ordering Information
Type and Version Order Code Package Description Shipping PTVA123501EC V2 R0 PTVA123501ECV2R0XTMA1 H-36248-2, bolt-down Tape & Reel, 50 pcs PTVA123501EC V2 R250 PTVA123501ECV2R250XTMA1 H-36248-2, bolt-down Tape & Reel, 250 pcs PTVA123501FC V1 R0 PTVA123501FCV1R0XTMA1 H-37248-2, earless Tape & Reel, 50 pcs PTVA123501FC V1 R250 PTVA123501FCV1R250XTMA1 H-37248-2, earless Tape & Reel, 250 pcs See next page for Typical RF Performance
Data Sheet 4 of 14 Rev. 05.1, 2016-04-26 Typical RF Performance (data taken in production test fixture) 30 32 34 36 38 40 42 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle a123501ec_g1-1 12 30 32 34 36 38 40 42 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle a123501ec_g1-2 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 µs pulse width, 12% duty cycle Efficiency Gain a123501ec_g1-3 -20 -18 -16 -14 -12 0.05 0.1 0.15 0.2 1100 1200 1300 1400 1500 IRL (dB) Power Droop (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 300 µs pulse width, 12% duty cycle Power Droop IRL a123501ec_g1-4
Data Sheet 5 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC Typical RF Performance (cont.) 31 33 35 37 39 41 43 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle
1400 MHz Efficiency
a123501ec_g2-1 31 33 35 37 39 41 43 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 2 ms pulse width, 10% duty cycle a123501ec_g2-2 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle Efficiency Gain a123501ec_g2-3 -20 -18 -16 -14 -12 -10 0.05 0.1 0.15 0.2 0.25 0.3 1100 1200 1300 1400 1500 IRL (dB) Power Droop (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 2 ms pulse width, 10% duty cycle a123501ec_g2-4 Power Droop IRL
Data Sheet 6 of 14 Rev. 05.1, 2016-04-26 Typical RF Performance (cont.) 31 33 35 37 39 41 43 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA,VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle a123501ec_g3-1 12 31 33 35 37 39 41 43 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 20% duty cycle a123501ec_g3-2 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle Efficiency Gain a123501ec_g3-3 -16 -14 -12 -10 0.1 0.15 0.2 0.25 0.3 0.35 1100 1200 1300 1400 1500 IRL (dB) Power Droop (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 20% duty cycle a123501ec_g3-4 Power Droop IRL
Data Sheet 7 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC Typical RF Performance (cont.) 31 33 35 37 39 41 43 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a123501ec_g4-1 Output Power Efficiency 31 33 35 37 39 41 43 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a123501ec_g4-2 Gain 1100 1200 1300 1400 1500 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle a123501ec_g4-3 Efficiency Gain -10 0.1 0.2 0.3 0.4 1100 1200 1300 1400 1500 IRL (dB) Power Droop (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 350 W, 16 ms pulse width, 50% duty cycle a123501ec_g4-4 Power Droop IRL
Data Sheet 8 of 14 Rev. 05.1, 2016-04-26 Typical RF Performance (cont.) 31 33 35 37 39 41 43 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 22 ms pulse width, 50% duty cycle a123501ec_g5-1 Output Power Efficiency 31 33 35 37 39 41 43 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 22 ms pulse width, 50% duty cycle a123501ec_g5-2 Gain 1100 1200 1300 1400 1500 Drain Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 330 W, 22 ms pulse width, 50% duty cycle a123501ec_g5-3 Efficiency Gain -16 -14 -12 -10 0.1 0.2 0.3 0.4 1100 1200 1300 1400 1500 IRL (dB) Power Droop (dB) Frequency (MHz) Pulsed RF Performance IDQ = 150 mA, VDD = 50 V, POUT = 330 W, 22 ms pulse width, 50% duty cycle a123501ec_5-4 IRL Power Droop
Data Sheet 9 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC Broadband Circuit Impedance Z Source Z Load G S D Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull Performance Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 150 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Freq [MHz] Z Source W Z Load W R jX R jX 1200 1.25 –1.99 1.96 –2.23 1300 1.54 –1.52 1.59 –2.03 1400 1.66 –1.58 1.26 –1.75
Data Sheet 10 of 14 Rev. 05.1, 2016-04-26 Reference Circuit Reference circuit assembly diagram (not to scale)* RF_OUT PTVA123501EC_OUT_02 p t v a 1 2 3 5 0 1 e c _ C D _ 0 7 - 1 6 - 2 0 1 3 R202 C202 C206 C211 R804 C207 VDD PTVA123501EC_IN_02 C210 C209 R201 C204 C205 C208 C203 R803C801C803 C802 R802 C101 R102 C103 R101 R801 C104 R103 C102 C105 C106 RF_IN RO6006, .025 (62) RO6006, .025 (62) VDD S1S3 C201 Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet 11 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC Components Information Component Description Suggested Manufacturer P/N Input C101 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C102, C103 Capacitor, 39 pF ATC ATC100B390KW500XB C104 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C105 Capacitor, 3 pF ATC ATC100A3R0CW150XB C106 Capacitor, 0.5 pF ATC ATC100A0R5CW150XB C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R102 Resistor, 5600 W Panasonic Electronic Components ERJ-8GEYJ562V R103, R804 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R802 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM7805 S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA C202 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C203 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C204, C205, C207 Capacitor, 39 pF ATC ATC100B390KW500XB C206, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C208, C209 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C211 Capacitor, 10 µF Panasonic Electronic Components EEV-HD1H100P R201, R202 Resistor, 5600 W Panasonic Electronic Components ERJ-8GEYJ562V Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA123501EC or PTVA123501FC Test Fixture Part No. LTN/PTVA123501EC V2 or LTN/PTVA123501FC V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 6.15
Data Sheet 12 of 14 Rev. 05.1, 2016-04-26 Package Outline Specifications Package H-36248-2 19.431 ±0.510 [.765±0.020] CL 34.036 [1.340] 19.812±0.200 [.780±0.008] 1.016 [.040] 3.632±0.380 [.143±0.015] SPH 1.575 [0.062] 45° X 2.720 2X 12.700 [.500] 4.826±0.510 [.190±0.020] 27.940 [1.100] 4X R1.524 [R.060] 2X R1.626 [R.064] D G S FLANGE 9.779 [.385] CL [.370 ]+0.004 –0.006 LID 9.398 +0.100 –0.150 CL [45° X .107] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Data Sheet 13 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC PTVA123501FC Package Outline Specifications (cont.) Package H-37248-2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower [.190±0.020] D G FLANGE 9.779 [.385] 2X 12.700 [.500] 4.826±0.510 LID 9.398 +0.100 -0.150 [.370 +0.004 [.765±0.020] 45° X 2.720 [45° X .107] CL CL 4X R0.508 +.381 -.127 [ R.020 +0.015 -0.005 ] S 1.016 [.040] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 20.574 [.810] 3.632±0.380 [.143±0.015] CL Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 14 of 14 Rev. 05.1, 2016-04-26 PTVA123501EC V2/ PTVA123501FC V1
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-05 Preliminary All Data Sheet reflects preliminary specification 02 2013-03-06 Production All Data Sheet reflects released product specification 03 2013-07-11 Production All Updated to include FC version Revised Pulsed RF performance table Minor cosmetic changes only Added package outline 04 2014-04-29 Production All Revised product from V1 to V2 Revised target RF Charateristics table 04.1 2014-06-26 Production All Corrected FC version to V1 throughout Corrected package to H-36248-2 and H-37248-2 in ordering table 05 2015-07-07 Production 8 Added typical performance at 22ms, 50% pulse 05.1 2016-04-26 Production 1, 3 Added ESD rating, updated ordering information