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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance, 1200 – 1400MHz,

50 V, 300 µs pulse width, 10 % duty cycle, class AB

  • Output power at P 1dB = 54 W - Efficiency = 55% - Gain = 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle. RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V , IDQ = 50 mA, POUT = 50 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 μs pulse width, 10 % duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency hD 46 50 — % Return Loss IRL — –10 –7 dB 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle

1200 MHz

1300 MHz

1400 MHz

a120501ea_g1-1 Output Power Efficiency

Data Sheet 2 of 10 Rev. 02.1, 2016-05-26 PTVA120501EA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 μA VDS = 105 V, VGS = 0 V IDSS — — 10 μA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.4 — W Operating Gate Voltage VDS = 50 V, IDQ = 50 mA VGS 3.0 3.5 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 μA Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 50 mA, 30 ms pulse width, 33% duty cycle, class AB test Mode of Op- eration ƒ (MHz) P1dB P3dB Pdroop (pulse) dB @ 50 WGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 16 57 57 14 59 75 0.3 Pulsed RF 1300 16 56 55 14 58 75 0.3 Pulsed RF 1400 16 49 50 14 50 55 0.2 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 50 mA, Input signal (tr = 7 ns, tf = 8 ns), 300 μs pulse width, 10% duty cycle, class AB test Mode of Op- eration ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) dB @ 50 W tr (ns) @ 50 W* tf (ns) @

50 W*Gain

(dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 –8 16 56 60 14 58 78 0.20 5 <2 Pulsed RF 1300 –10 16 57 60 14 58 78 0.20 5 <2 Pulsed RF 1400 –8 16 55 54 14 57 57 0.15 5 <2 * Note = tr and tf are defined as D between input and output rise and fall times

Data Sheet 3 of 10 Rev. 02.1, 2016-05-26 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W CW) RqJC 1.37 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA120501EA V1 R0 PTVA120501EAV1R0XTMA1 H-36265-2, bolt-down Tape & Reel, 50 pcs PTVA120501EA V1 R2 PTVA120501EAV1R2XTMA1 H-36265-2, bolt-down Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) -21 -17 -13 950 1050 1150 1250 1350 1450 1550 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 50 V, IDQ = 1.5 A IRL a120501ea_gcw-2 Gain 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 50 V, IDQ = 50 mA

1300 MHz Efficiency

a120501ea_gcw-1

Data Sheet 4 of 10 Rev. 02.1, 2016-05-26 PTVA120501EA Typical Performance (cont.) 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle a120501ea_g1-1 Output Power Efficiency 18 22 26 30 34 38 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle a120501ea_g1-2 Gain -30 -25 -20 -15 -10 0.00 0.05 0.10 0.15 0.20 0.25 1150 1200 1250 1300 1350 1400 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 300 µs pulse width, 10% duty cycle a120501ea_g1-4 IRL Power Droop 17.2 17.4 17.6 17.8 18.0 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 300 µs pulse width, 10% duty cycle a120501ea_g1-3 Gain Efficiency

Data Sheet 5 of 10 Rev. 02.1, 2016-05-26 Typical Performance (cont.) 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a120501ea_g4-1 Output Power Efficiency 18 22 26 30 34 38 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a120501ea_g4-2 Gain -30 -25 -20 -15 -10 0.00 0.05 0.10 0.15 0.20 0.25 1150 1200 1250 1300 1350 1400 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 16 ms pulse width, 50% duty cycle a120501ea_g4-4 IRL Power Droop 16.6 16.8 17.0 17.2 17.4 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 16 ms pulse width, 50% duty cycle a120501ea_g4-3 Efficiency Gain

Data Sheet 6 of 10 Rev. 02.1, 2016-05-26 PTVA120501EA Broadband Circuit Impedance Z Source Z Load G S D Freq [MHz] Z Source W Z Load W R jX R jX 1200 8.07 –2.13 3.66 4.97 1300 5.13 –0.95 3.90 4.56 1400 5.64 2.24 3.25 5.36 Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull Performance

Data Sheet 7 of 10 Rev. 02.1, 2016-05-26 Reference Circuit , 1200 – 1400 MHz Reference circuit assembly diagram (not to scale) PTVA120501EA_IN_04 RO3010, .025 (105) C102 RF_IN RF_OUT VDD a 1 2 0 5 0 1 e a _ C D _ 0 9 - 2 4 - 2 0 1 3 C103 C105 C104 C106 R102 R101 R802 R801 R803 R804 PTVA120501EA_OUT_04 RO3010, .025 (105) S3 C801 C802 C803 C212 C202R201 C201 C205 C203 C208 C204 C207 C214 R202 C206 C215 C210 C209C213 C211 VDD C101

Data Sheet 8 of 10 Rev. 02.1, 2016-05-26 PTVA120501EA Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA120501EA Test Fixture Part No. LTN/PTVA120501EA V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 6.15, ƒ = 1200 – 1400 MHz Components Information Component Description Suggested Manufacturer P/N Input C101 Capacitor, 39 pF ATC ATC100B390KW500XB C102 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C103 Capacitor, 33 pF ATC ATC100A330JW150XB C104 Capacitor, 2.7 pF ATC ATC800A2R7BT C105 Capacitor, 10 pF ATC ATC800A100JT C106 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R102 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R802 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ100V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201, C207 Capacitor, 33 pF ATC ATC100A330JW150XB C202, C215 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C203, C208 Capacitor, 3.9 pF ATC ATC800A3R9BT C204, C205 Capacitor, 6.8 pF ATC ATC800A6R8BT C206, C212 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C209 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C210 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C211 Capacitor, 6800 µF Cornell Dubilier Electronics (CDE) ECO-S2AP682EA C213 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C214 Capacitor, 39 pF ATC ATC100B390KW500XB R201, R202 Resistor, 5600 W Panasonic Electronic Components ERJ-8RQJ5R6V

Data Sheet 9 of 10 Rev. 02.1, 2016-05-26 Package Outline Specifications Package H-36265-2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Data Sheet 10 of 10 Rev. 02.1, 2016-05-26 Edition 2016-05-26 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International PTVA120501EA V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-05-29 Advance All Data Sheet reflects advance specification for product development 02 2013-09-24 Production All Data Sheet reflects released product specification 03 2016-05-26 Production 3 Updated ordering information