PTVA120501EA CREE | Alldatasheet

Document overview

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Technical content

Features

  • Broadband input matching
  • High gain and efficiency
  • Typical Pulsed CW performance, 1200 – 1400MHz,

50 V, 300 µs pulse width, 10 % duty cycle, class AB

  • Output power at P 1dB = 54 W - Efficiency = 55% - Gain = 16 dB
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle. RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V , IDQ = 50 mA, POUT = 50 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 μs pulse width, 10 % duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17 — dB Drain Efficiency hD 46 50 — % Return Loss IRL — –10 –7 dB 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle

1200 MHz

1300 MHz

1400 MHz

a120501ea_g1-1 Output Power Efficiency PTVA120501EA

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 2PTVA120501EA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 μA VDS = 105 V, VGS = 0 V IDSS — — 10 μA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.4 — W Operating Gate Voltage VDS = 50 V, IDQ = 50 mA VGS 3.0 3.5 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 μA Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 50 mA, 30 ms pulse width, 33% duty cycle, class AB test Mode of Op- eration ƒ (MHz) P1dB P3dB Pdroop (pulse) dB @ 50 WGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 16 57 57 14 59 75 0.3 Pulsed RF 1300 16 56 55 14 58 75 0.3 Pulsed RF 1400 16 49 50 14 50 55 0.2 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 50 mA, Input signal (tr = 7 ns, tf = 8 ns), 300 μs pulse width, 10% duty cycle, class AB test Mode of Op- eration ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) dB @ 50 W tr (ns) @ 50 W* tf (ns) @

50 W*Gain

(dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) Pulsed RF 1200 –8 16 56 60 14 58 78 0.20 5 <2 Pulsed RF 1300 –10 16 57 60 14 58 78 0.20 5 <2 Pulsed RF 1400 –8 16 55 54 14 57 57 0.15 5 <2 * Note = tr and tf are defined as D between input and output rise and fall times

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 3PTVA120501EA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W CW) RqJC 1.37 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA120501EA V1 R0 PTVA120501EA-V1-R0 H-36265-2, bolt-down Tape & Reel, 50 pcs PTVA120501EA V1 R2 PTVA120501EA-V1-R2 H-36265-2, bolt-down Tape & Reel, 250 pcs Typical Performance (data taken in a production test fixture) -21 -17 -13 950 1050 1150 1250 1350 1450 1550 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance Gain & Input Return Loss VDD = 50 V, IDQ = 1.5 A IRL a120501ea_gcw-2 Gain 36 38 40 42 44 46 48 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance VDD = 50 V, IDQ = 50 mA

1300 MHz Efficiency

a120501ea_gcw-1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 4PTVA120501EA Typical Performance (cont.) 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle a120501ea_g1-1 Output Power Efficiency 18 22 26 30 34 38 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle a120501ea_g1-2 Gain -30 -25 -20 -15 -10 0.00 0.05 0.10 0.15 0.20 0.25 1150 1200 1250 1300 1350 1400 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 300 µs pulse width, 10% duty cycle a120501ea_g1-4 IRL Power Droop 17.2 17.4 17.6 17.8 18.0 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 300 µs pulse width, 10% duty cycle a120501ea_g1-3 Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 5PTVA120501EA Typical Performance (cont.) 18 22 26 30 34 38 Drain Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a120501ea_g4-1 Output Power Efficiency 18 22 26 30 34 38 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 16 ms pulse width, 50% duty cycle a120501ea_g4-2 Gain -30 -25 -20 -15 -10 0.00 0.05 0.10 0.15 0.20 0.25 1150 1200 1250 1300 1350 1400 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 16 ms pulse width, 50% duty cycle a120501ea_g4-4 IRL Power Droop 16.6 16.8 17.0 17.2 17.4 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, POUT = 50 W, 16 ms pulse width, 50% duty cycle a120501ea_g4-3 Efficiency Gain

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 6PTVA120501EA Broadband Circuit Impedance Z Source Z Load G S D Freq [MHz] Z Source W Z Load W R jX R jX 1200 8.07 –2.13 3.66 4.97 1300 5.13 –0.95 3.90 4.56 1400 5.64 2.24 3.25 5.36 Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 50 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull Performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 7PTVA120501EA Reference Circuit , 1200 – 1400 MHz Reference circuit assembly diagram (not to scale) PTVA120501EA_IN RO3010, .025 (105) C102 RF_IN RF_OUT VDD a12 050 1ea _C D_06 - 19 - 20 18 C103 C105 C104 C106 R102 R101 R802 R801 R803 R804 PTVA120501EA_OUT RO3010, .025 (105) S3 C801 C802 C803 C212 C202R201 C201 C205 C203 C208 C204 C207 C214 R202 C206 C215 C210 C209C213 C211 VDD C101

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 8PTVA120501EA Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA120501EA Test Fixture Part No. LTN/PTVA120501EA V1 PCB Rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 6.15, ƒ = 1200 – 1400 MHz Components Information Component Description Suggested Manufacturer P/N Input C101 Capacitor, 39 pF ATC ATC100B390KW500XB C102 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C103 Capacitor, 33 pF ATC ATC100A330JW150XB C104 Capacitor, 2.7 pF ATC ATC800A2R7BT C105 Capacitor, 10 pF ATC ATC800A100JT C106 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C801, C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101 Resistor, 1000 W Panasonic Electronic Components ERJ-8GEYJ102V R102 Resistor, 10 W Panasonic Electronic Components ERJ-8GEYJ100V R801 Resistor, 2000 W Panasonic Electronic Components ERJ-8GEYJ202V R802 Resistor, 1200 W Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1300 W Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 100 W Panasonic Electronic Components ERJ-8GEYJ100V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201, C207 Capacitor, 33 pF ATC ATC100A330JW150XB C202, C215 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C203, C208 Capacitor, 3.9 pF ATC ATC800A3R9BT C204, C205 Capacitor, 6.8 pF ATC ATC800A6R8BT C206, C212 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C209 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C210 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C211 Capacitor, 6800 µF Cornell Dubilier Electronics (CDE) ECO-S2AP682EA C213 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C214 Capacitor, 39 pF ATC ATC100B390KW500XB R201, R202 Resistor, 5600 W Panasonic Electronic Components ERJ-8RQJ5R6V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-19 9PTVA120501EA Package Outline Specifications Package H-36265-2 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 03, 2018-06-19 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTVA120501EA

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-05-29 Advance All Data Sheet reflects advance specification for product development 02 2013-09-24 Production All Data Sheet reflects released product specification 02.1 2016-05-26 Production 3 Updated ordering information 02.2 2017-02-07 Production 3 Updated operating voltage and junction temperature 03 2018-06-19 Production All Converted to Wolfspeed Data Sheet