PTVA120252MT

PTVA120252MT CREE | Alldatasheet

Document overview

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Technical content

Features

• Unmatched
• Target CW performance 960 MHz, 48 V, combined outputs - Output power at P1dB = 25 W - Gain = 19.8 dB - Efficiency = 64%
• Capable of handling 10:1 VSWR @ 48 V, 20 W CW output power
• Integrated ESD protection
• Human Body Model class 1C (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced, surface-mount package. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in an Wolfspeed production test fixture) VDD = 48 V, IDQ = 87 mA, POUT = 5.5 W average, ƒ = 960 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 18.5 19.5 — dB Drain Efficiency hD 28 31.5 — % Adjacent Channel Power Ratio ACPR — –33.5 –31 dBc -75 -50 -25 29 33 37 41 45 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 95 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptva120252mt_g1 PTVA120252MT

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 2PTVA120252MT DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 2.8 — W Operating Gate Voltage VDS = 48 V, IDQ = 85 mA VGS 3 3.65 4 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70°C, 25 W CW) RqJC 2.6 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA120252MT V1 R1K PTVA120252MT -V1-R1K PG-SON-16, plastic package Tape & Reel, 1000 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 3PTVA120252MT Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 29 33 37 41 45 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 95 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff ptva120252mt_g2 -25 -20 -15 -10 -45 -40 -35 -30 -25 -20 775 825 875 925 975 1025 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 95 mA, POUT = 37.4 dBm, 3GPP WCDMA signal, PAR = 10 dB IRL ACPU ptva120252mt_g4 775 825 875 925 975 1025 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 95 mA, POUT = 37.4 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva120252mt_g3 27 32 37 42 47 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 95mA

920 MHz

940 MHz

960 MHz

ptva120252mt_g5

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 4PTVA120252MT Typical RF Performance (cont.) Load Pull Performance Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 40 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] 27 31 35 39 43 47 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 95 mA, ƒ = 960 MHz VDD = 44 V VDD = 48 V VDD = 52 V Gain Efficiency ptva120252mt_g6 -12 -10 870 895 920 945 970 995 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 48 V, IDQ = 95 mA IRL Gain ptva120252mt_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 5PTVA120252MT Reference Circuit, 925 – 960 MHz Reference circuit assembly diagram (not to scale) C801C803 R803 R802 C802 R804R801 C204 C201 R103 C102 C104 C203 C106 C103 C101 C105 R101 C202 R102 PTVA120252MT _02 RO4350, 30 MIL (169) RF_OUT VDD RF_IN VGS S3S2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 6PTVA120252MT Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA120252MT V1 Test Fixture Part No. LTN/PTVA120252MT V1 PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66, ƒ = 925 – 960 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101, C104, C106 Capacitor, 75 pF ATC ATC100B750JW500XB C102 Capacitor, 14 pF ATC ATC100B140KW500XB C103 Capacitor, 2.2 pF ATC ATC100B2R2DW500XB C105 Capacitor, 2.5 pF ATC ATC100B2R5CW500XB R101, R103 Resistor, 200 ohms Panasonic Electronic Components ERJ-8GEYJ201V R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C203 Capacitor, 75 pF ATC ATC100B750JW500XB C202 Capacitor, 2.0 pF ATC ATC100B2R0CW500XB C204 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C801,C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R801 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R802 Resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 100 ohms Panasonic Electronic Components ERJ-8GEYJ101V S1 Potentiometer 2K ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 7PTVA120252MT Pinout Diagram (top view) p t v a 1 2 0 2 5 2 m t _ p d _ 2 0 1 6 - 0 8 - 2 5 RF In FET1 RF In FET1 RF In FET1 RF In FET2 RF In FET2 RF In FET2 RF Out FET1 RF Out FET1 RF Out FET1 RF Out FET2 RF Out FET2 RF Out FET2 NC NCNC NC FET1 Index Marking TOP VIEW Source (metalized backside) FET2 Description Pin Gate 2 – 7 Drain 10 – 15 Source bottom metalization not connected 1, 8, 9, 16

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-06-20 8PTVA120252MT Package Outline Specifications Package PG-SON-16 INDEX MARKING 6.00 [.236] 4.00 [.157] 1.00 [.039] (0.20 [.008]) 4X 0.65 [.026] TYP 10X 0.80 [.031] TYP 4X 0.300 [.0118] 5.10±0.15 [.201±.006] 1.90±0.15 [.075±.006] 0.05 0.00 [.002 .000 ] 16X 0.40±0.05 [.012±.002] TOP VIEW BOTTOM VIEW SIDE VIEW S CHAMFER0.175 159 8 7 6 5 4 3 2 1 161413121110 INDEXMARKING 16X NO NiPdAu PLATING ON SHEARED EDGE Diagram Notes—unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [.004]. 5. Pins: 2 – 7, gate; 10 – 15, drain; S, source (bottom metalization); 1, 8, 9, 16, not connected. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].

www.wolfspeed.comRev. 04, 2018-06-20 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTVA120252MT

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-03-03 Advance All Data Sheet reflects advance specification for product development 02 2016-06-08 Advance All Revised package outline (1) 02.1 2016-07-26 Advance 4 Revised package outline (2) 03 2016-09-26 Production All Data Sheet reflects released product specification 03.1 2016-09-26 Production All Revised ordering information 03.2 2016-09-26 Production All Revised circuit components information 03.3 2016-10-03 Production All Revised circuit 03.4 2017-02-07 Production 2 Updated operating voltage and junction temperature 04 2018-06-20 Production All Converted to Wolfspeed Data Sheet