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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 14
Technical content
Features
- Unmatched input and output
- High gain and efficiency
- Integrated ESD protection
- ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
- Low thermal resistance
- Excellent ruggedness
- Pb-free and RoHS-compliant
- Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 0.02 A, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test P1dB P3dB Mode of operation ƒ IRL Gain Eff POUT Gain Eff POUT Pdroop(pulse) tr tf (MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 30 W (ns) (ns) Pulsed RF 1200 12 16.4 52 31 14.4 56 41 0.27 6 8 Pulsed RF 1300 11 16.0 56 32 14.0 59 40 0.20 6 8 Pulsed RF 1400 14 15.8 53 34 13.8 56 38 0.24 6 8 18 22 26 30 34 Drain Efficiency (%) Output Power (dBm) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle
1200 MHz
1300 MHz
1400 MHz
a120251ea-v2-gr1a\\\`
Data Sheet 2 of 14 Rev. 04.2, 2016-04-19 RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 0.02 A, POUT = 25 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 M Hz, 300 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 47 54 — % Return Loss IRL — –13 –9 dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1.0 µA VDS = 105 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 1.4 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, VDD = 50 V, 25 W CW) RqJC 3.7 °C/W
Ordering Information
Type and Version Order Code Package and Description Shipping PTVA120251EA V2 R0 PTVA120251EAV2R0XTMA1 H-36265-2, bolt-down T ape & Reel, 50 pcs PTVA120251EA V2 R250 PTVA120251EAV2R250XTMA1 H-36265-2, bolt-down T ape & Reel, 250 pcs
Data Sheet 3 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA Typical RF Performance (data taken in production test fixture) 18 22 26 30 34 Gain (dB) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, POUT = 25 W 300 µs pulse width, 12% duty cycle Efficiency Gain a120251ea-v2-gr1c -22 -20 -18 -16 -14 -12 -10 0.08 0.12 0.16 0.20 0.24 0.28 0.32 1150 1250 1350 1450 Input Return Loss (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 300 µs pulse width, 12% duty cycle Input Return Loss Power Droop a120251ea-v2-gr1d 0 28 32 36 40 44 48 Efficiency (%) Gain (dB) Output Power (dBm) Pulsed CW Performance at Selected VDD IDQ = 20 mA, ƒ = 1300 MHz 300 µs, 12% duty cycle 30 V 35 V 40 V 45 V 50 V a120251ea-v2-gr6 Gain Efficiency
Data Sheet 4 of 14 Rev. 04.2, 2016-04-19 Typical RF Performance (cont.) 18 20 22 24 26 28 30 32 34 Gain (dB) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 2 ms pulse width, 10% duty cycle -18 -16 -14 -12 -10 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 1150 1200 1250 1300 1350 1400 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 2 ms pulse width, 10% duty cycle a120251ea-v2-gr2d Input Return Loss Power Droop 1150 1200 1250 1300 1350 1400 1450 Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, POUT = 25 W 2 ms pulse width, 10% duty cycle a120251ea-v2-gr2c Efficiency Gain 18 22 26 30 34 Drain Efficiency (%) POUT (dBm) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 2 ms pulse width, 10% duty cycle
Data Sheet 5 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA Typical RF Performance (cont.) 18 22 26 30 34 Drain Efficiency (%) Output Power (dBm) Power In (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 128 µs pulse width, 10% duty cycle 18 20 22 24 26 28 30 32 34 Gain (dB) Power In (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 128 µs pulse width, 10% duty cycle Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, POUT = 25 W 128 µs pulse width, 10% duty cycle a120251ea-gr3c Efficiency Gain -18 -16 -14 -12 -10 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 1150 1250 1350 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 128 µs pulse width, 10% duty cycle a120251ea-gr3d Input Return Loss Power Droop
Data Sheet 6 of 14 Rev. 04.2, 2016-04-19 Typical RF Performance (cont.) 18 20 22 24 26 28 30 32 34 Gain (dB) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 16 ms pulse width, 50% duty cycle Drain Efficiency (%) Gain (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, POUT = 25 W 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4c Efficiency Gain -16 -14 -12 -10 0.08 0.12 0.16 0.20 0.24 0.28 0.32 1150 1250 1350 1450 IRL (dB) Power Droop (dB) Frequency (MHz) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA at P1dB 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4d Input Return Loss Power Droop 18 20 22 24 26 28 30 32 Drain Efficiency (%) Output Power (dBm) Input Power (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4a Output Power Efficiency
Data Sheet 7 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA Typical RF Performance (tested with LTN/PTVA120251EA E4 test fixture, 960 MHz – 1215 MHz) See next page for further performance characterization 32 34 36 38 40 42 44 46 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 50 V, IDQ = 20 mA a120251ea-v2-gr5 -25 -20 -15 -10 5.0 7.5 10.0 12.5 15.0 17.5 20.0 900 1100 1300 1500 1700 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) Small Signal CW Performance VDD = 50 V, IDQ = 80 mA Gain IRL a120251ea-v2-gr7
Data Sheet 8 of 14 Rev. 04.2, 2016-04-19 0 5 10 15 20 25 30 35 40 Gain (dB) Output Power (W) Power Sweep, Pulsed RF IDQ = 20 mA, VDD = 50 V, TCASE = 25°C, 128 µs pulse width, 10% duty cycle
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
a120251e1a_g4-1 5 0 5 10 15 20 25 30 35 40 Drain Efficiency (%) Output Power (W) Power Sweep, Pulsed RF IDQ = 20 mA, VDD = 50 V, TCASE = 25°C, 128 µs pulse width, 10% duty cycle a120251e1a_g4-2 0 5 10 15 20 25 30 35 Gain (dB) Output Power (W) CW Performance VDD = 50 V, IDQ = 20 mA a120251e1a_gCW-3 0 5 10 15 20 25 30 35 Drain Efficiency (%) Output Power (W) CW Performance VDD = 50 V, IDQ = 20 mA a120251e1a_gCW-4 Typical RF Performance (cont.) (tested with LTN/PTVA120251EA E4 test fixture, 960 MHz – 1215 MHz)
Data Sheet 9 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA 450 550 650 750 850 PAR @ 0.01% CCDF (dB) Frequency (MHz) DVB-T Performace PAR @ 0.01% CCDF vs Frequency at various Average POUT VDD = 40 V, IDQ = 140 mA POUT = 36 dBm POUT = 34 dBm a120251ea_40V_g3 POUT = 32 dBm POUT = 30 dBm 450 550 650 750 850 Drain Efficiency (%) Frequency (MHz) DVB-T Performace Efficiency vs Frequency at various Average POUT VDD = 40 V, IDQ = 140 mA POUT = 30 dBm POUT = 32 dBm POUT = 34 dBm POUT = 36 dBm a120251ea_40V_g2 Test Conditions: DVB-T 8 MHz unclipped input signal, output PAR measured at 0.01% point of CCDF curve, ACPR measured over 200 KHz BW at 4.1 MHz offset from carrier center frequency. -48 -46 -44 -42 -40 -38 -36 -34 -32 -30 450 550 650 750 850 ACPR (dB) Frequency (MHz) DVB-T Performace ACPR vs Frequency at various Average POUT VDD = 40 V, IDQ = 140 MA POUT = 36 dBm POUT = 34 dBm POUT = 32 dBm POUT = 30 dBm a120251ea_40V_g1 Typical RF Performance (cont.) (tested with LTN/PTVA120251EA E3 test fixture, 470 MHz – 860 MHz)
Data Sheet 10 of 14 Rev. 04.2, 2016-04-19 Broadband Circuit Impedance See next page for reference circuit information Z Source Z Load G S D Freq [MHz] Z Source W Z Load W R jX R jX 1200 4.31 –0.22 6.46 7.63 1300 5.06 –0.79 6.29 7.27 1400 4.94 –1.96 6.14 8.72
Data Sheet 11 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA Assembly diagram for reference circuit LTN/PTVA120251EA V2, 1200 MHz to 1400 MHz (not to scale) DUT Test Fixture Part No. PCB Frequency (MHz) PTVA120251EA LTN/PTVA120251EA V2 * Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15 1200 – 1400 PTVA120251EA LTN/PTVA120251EA E2 † Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 1200 – 1400 PTVA120251EA LTN/PTVA120251EA E3 † Rogers 4350B, 0.762mm [.030"] thick, 2 oz. copper, εr = 3.48 470 – 860 PTVA120251EA LTN/PTVA120251EA E4 † Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 960 – 1215 * See pages 11 – 12 for assembly information. Find Gerber files for this reference circuit on the Infineon Web site at www.infineon.com/rfpower † Gerber files for this reference circuit are available on request. Reference Circuits RF_IN p t v a 1 2 0 2 5 1 e a _ c d _ 9 - 3 0 - 1 4 R803 C802 R802R805 R804 C801R801 C803 PTVA120251_IN_01A RO6006, 025 (62) RO6006, 025 (63)PTVA120251_OUT_02 R101 R103 C101 C103 C102R102 C104 RF_OUT C202 C204 C201 C205 VDD R201 C203 PTVA120251EA C802
Data Sheet 12 of 14 Rev. 04.2, 2016-04-19 Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 56 pF ATC ATC100B560JW500XB C103 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C104 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C801, C802, C803 Capacitor, 1000 pF Kemet C1812C560KHGACTU R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R102 Resistor, 0 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R103, R801 Resistor, 10 ohms Panasonic – ECG ERJ-3GEYJ100V R802, R805 Resistor, 2K ohms Panasonic Electronic Components ERJ-8GEYJ202V R803 Chip resistor, 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R804 Chip resistor, 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V S1 Potentiometer 2K ohms Bourns Inc. 3224W-1-202E S2 Voltage regulator Fairchild Semiconductor LM7805 S3 Transistor Fairchild Semiconductor BCP56 Output C201 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C202 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C203 Capacitor, 100 µF Cornell Dubilier Electronics SK101M100ST C204, C205 Capacitor, 56 pF ATC ATC100B560JW500XB C206 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R101 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8GEYJ5R6V
Data Sheet 13 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA Package Outline Specifications Package H-36265-2 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower 2X 7.11 [.280] 45° X 2.03 [.080] 3.05 [.120] CL CL FLANGE 9.78 [.385] 2X R1.52 [R.060] 4X R0.63 [R.025] MAX D S G 15.49±.51 [.610±.020] 4X R1.52 [R.060] LID 10.16±.25 [.400±.010] 2.66±.51 [.105±.020] ALL FOUR CORNERS 15.23 [.600] SPH 1.57 [.062] 20.31 [.800] 1.02 [.040] 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±0.127 [0.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
85579 Neubiberg, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 14 of 14 Rev. 04.2, 2016-04-19 PTVA120251EA V2
Revision History
Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-04 Preliminary All First release of Data Sheet for pre-production product 02 2012-10-29 Preliminary 6 Add DVB-T performance graphs 03 2013-03-25 Production All 1 – 2 3 – 8 9 – 11 Data Sheet reflects released product specifications and performance Update tables with current data Add further graphs Add load pull performance and reference circuit information 04 2014-10-03 Production 11 – 12 1, 3 – 7 New circuit design. Characterization in new circuit. 04.1 2015-06-15 Production 2 Updated max of IRL in pulsed RF performance table 04.2 2016-04-19 Production 2 Updated ordering information 01 2012-06-04 Preliminary All First release of Data Sheet for pre-production product 02 2012-10-09 Preliminary 6 Add DVB-T performance graphs 03 2013-03-25 Production All 1 – 2 3 – 8 9 – 11 Data Sheet reflects released product specifications and performance Update tables with current data Add further graphs Add load pull performance and reference circuit information 04 2014-10-03 Production 11 – 12 1, 3 – 7 New circuit design. Characterization in new circuit.