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Technical content

Features

  • Unmatched
  • Target pulsed CW performance at 821 MHz, 48 V - Ouput power = 12 W P1dB - Efficiency = 62% - Gain = 22 dB
  • Capable of withstanding a 10:1 load mismatch at

50 V, 12 W (CW) output power

  • Integrated ESD protection
  • Human Body Model class 1B (per ANSI/ESDA/ JEDEC JS-001)
  • Excellent thermal stability
  • Pb-free and RoHS-compliant RF Characteristics Single-carrier WCDMA Characteristics (tested in Infineon production test fixture) VDD = 48 V, IDQ = 35 mA, POUT = 3.5 W avg, ƒ = 821 MHz, 3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 20.5 21.5 — dB Drain Efficiency hD 35.5 38.5 — % Adjacnet Channel Power Ratio ACPR — –33.5 –31.5 dBc -75 -50 -25 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 50 mA, ƒ = 821 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptva120121m_g1

Data Sheet 2 of 9 Rev. 02.1, 2017-02-03 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 0.1 µA VDS = 105 V, VGS = 0 V IDSS — — 1.0 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 0.1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 2.96 — W Operating Gate Voltage VDS = 48 V, IDQ = 0.05 A VGS 3 3.57 4 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70°C, 13 W CW) RqJC 4.9 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Order Code Package Description Shipping PTVA120121M V1 R1K PTVA120121MV1R1KXUMA1 PG-SON-10, molded plastic, SMD T ape & Reel, 1,000 pcs

Data Sheet 3 of 9 Rev. 02.1, 2017-02-03 PTVA120121M Evaluation Boards Order Code Frequency Description LTN/PTVA120121M V1 758 – 821 MHz Class AB, RO4350 LTN/PTVA120121M E2 1200 – 1400 MHz Class AB, RO3010 LTN/PTVA120121M E3 960 – 1215 MHz Class AB, RO3010

Typical RF Performance (data taken in production test fixture) -80 -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 50 mA, ƒ = 821 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff ptva120121m_g2 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 675 725 775 825 875 925 Return Loss (dB) ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 50 mA, POUT = 35.5 dBm, 3GPP WCDMA signal, PAR = 10 dB IRL ACPU ptva120121m_g4 675 725 775 825 875 925 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 50 mA, POUT = 35.5 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva120121m_g3 25 30 35 40 45 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 50 mA

821 MHz

758 MHz

791 MHz

ptva120121m_g5 PTVA120121M Data Sheet 4 of 9 Rev. 02.1, 2017-02-03

Typical RF Performance (cont.) Load Pull Performance Load Pull Performance – CW signal: 48 V, IDQ = 36 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [W] Gain [dB] POUT [dBm] POUT [W] PAE [%] 27 31 35 39 43 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 50 mA, ƒ = 821 MHz VDD = 41 V VDD = 48 V VDD = 55 V Gain Efficiency ptva120121m_g6 -26 -22 -18 -14 -10 650 700 750 800 850 900 950 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal CW Gain & Input Return Loss VDD = 48 V, IDQ = 50 mA IRL Gain ptva120121m_g7 Data Sheet 5 of 9 Rev. 02.1, 2017-02-03 PTVA120121M

Reference Circuit, 758 – 821 MHz Reference circuit assembly diagram (not to scale) RF_IN RF_OUT p t v a 1 2 0 1 2 1 m _ C D _ 2 0 1 6 - 0 7 - 0 8 RO4350, 30 MIL (169) PTVA120121M_06 R801 R804 C803 R803 C802 R802 C103 R102 C203 C201 C204 C202 C102 C101 R101 DUT S2S1 S3 VDD VGG C801 PTVA120121M Data Sheet 6 of 9 Rev. 02.1, 2017-02-03

Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA120121M V1 Test Fixture Part No. LTN/PTVA120121M V1 PCB Rogers 4350, 0.762 mm [0.030”] thick, 2 oz. copper, εr = 3.66, ƒ = 758 – 821 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101 Capacitor, 6.8 pF ATC ATC100B6R8CW500XB C102, C103 Capacitor, 47 pF ATC ATC100B470KW500XB R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R102 Resistor, 200 ohms Panasonic Electronic Components ERJ-8GEYJ221V C801,C802, C803 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R801 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V R802 Resistor, Chip 1.2K ohms Panasonic Electronic Components ERJ-3GEYJ122V R803 Resistor, Chip 1.3K ohms Panasonic Electronic Components ERJ-3GEYJ132V R804 Resistor, 100 ohms Panasonic Electronic Components ERJ-8GEYJ101V S1 Resistor, Variable 2K ohms Bourns Inc. 3224W-1-202E S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Transistor Infineon Technologies BCP56 Output C201, C204 Capacitor, 47 pF ATC ATC100B470KW500XB C202 Capacitor, 0.9 pF ATC ATC100B0R9CW500XB C203 Capacitor, 10 µf AVX / Geratte TPSE106M050R0400 Data Sheet 7 of 9 Rev. 02.1, 2017-02-03 PTVA120121M

Data Sheet 8 of 9 Rev. 02.1, 2017-02-03 Package Outline Specifications Package PG-SON-10 Diagram Notes–unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [0.004] unless specified otherwise. 5. Pins: S = Source, 1-5 = Gate, 6-10 = Drain. 6. NiPdAu plating (gold top layer) : 0.025 – 0.127 micron[1 – 5 microinch]. TOP VIEW 4.00 [.157] 4.00 [.157] INDEX MARKING BOTTOM VIEW 5 4 3 2 1 6 7 8 9 10 5X .515 [.0203] 2 PLACES 2.37 [.093] 0.54 [.021] 2 PLACES 5X .320 [.0126] 2 PLACES .815 [.0321] 0.30 [.012] 3.40 [.134] INDEX MARKING 4X 0.65 [.026] 2 PLACES 2.97 [.117] S SIDE VIEW 0.38 [.015] BOTH SIDES 1.42 [.056] 0.05 [.002] PG-SON-10_po_02_12-07-2012 Find the latest and most complete information tabout products and packaging at the Infineon Internet page (www.infineon.com/rfpower)

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infineon.com) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 9 of 9 Rev. 02.1, 2017-02-03 Edition 2017-02-03 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTVA120121M V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-10-07 Advance All Data Sheet reflects advance specification for product development 02 2016-07-14 Production All Data Sheet reflects released product specification 02.1 2017-02-03 Production 2 Update operating voltage and junction temperature