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Technical content

Features

 Broadband internal input and output matching  High gain and effi ciency  Integrated ESD protection  Low thermal resistance  Excellent ruggedness  Pb-free and RoHS compliant  Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 µS, 10% duty cycle. 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 μs pulse width, 10% duty cycle

960 MHz

1030 Mhz

1090 MHz

1150 MHz

1215 MHz

a104501eh_g1 RF Characteristics Pulsed RF Performance (tested in Infi neon test fi xture) (tested in Infi neon test fi xture) VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain G ps 16.5 17.5 — dB Drain Efficiency D 53 58 — % Gain Flatness G — 0.85 1.8 dB Return Loss IRL — –9.5 –6 dB

Data Sheet 2 of 9 Rev. 02, 2014-07-22 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V( BR)DSS 105 — — V Drain Leakage Current V DS = 28 V, VGS = 0 V I DSS — — 1 µA V DS = 63 V, VGS = 0 V I DSS — — 10 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.1 —  Operating Gate Voltage V DS = 50 V, IDQ = 200 mA V GS 3.0 3.5 4.0 V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 105 V Gate-Source Voltage V GS –6 to +12 V Junction Temperature T J 200 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance R JC 0.25 °C/W (TCASE = 70°C, 430 W CW, ƒ = 1090 MHZ, VDD = 50 V, IDQ = 200 mA)

Ordering Information

Type and Version Order Code Package Description Shipping PTVA104501EH V1 PTVA104501EHV1XWSA1 H-33288-2, earless fl ange Tray PTVA104501EH V1 R250 PTVA104501EH V1R250XTMA1 H-33288-2, earless fl ange Tape & Reel, 250 pcs RF Characteristics Typical RF Performance (not subject to production test, verifi ed by design/characterization in Infi neon test fi xture) VDD = 50 V, IDQ = 200 mA, Input signal (tr = 7.0 ns, tf = 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test Mode of Operation ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) @ P1dB tr (ns) @P1dB tf (ns) @P1dBGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) 128 µs, 10% 960 –7.5 18.0 56 460 16.0 53 490 0.15 5 <2 1030 –13.0 18.5 59 470 16.5 60 540 0.15 5 <2 1090 –8.0 17.8 61 510 15.8 61 590 0.20 5 <2 1150 –15.0 18.1 59 540 16.1 60 620 0.20 5 <2 1215 –9.0 18.3 56 460 16.3 53 510 0.20 5 <2

Data Sheet 3 of 9 Rev. 02, 2014-07-22 PTVA104501EH Typical RF Performance (data taken in production test fixture) 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 μs pulse width, 10% duty cycle a104501eh_g1 12 28 30 32 34 36 38 40 42 44 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 μs pulse width, 10% duty cycle a104501eh_g2 900 1000 1100 1200 1300 Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), 128 μs pulse width, 10% duty cycle a104501eh_g3 Gain Efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 900 1000 1100 1200 1300 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), 128 μs pulse width, 10% duty cycle Power Droop IRL a104501eh_g4

Data Sheet 4 of 9 Rev. 02, 2014-07-22 Typical RF Performance (cont.) 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, P.W = 3.354mS, Burts = 7μS On, 6μS Off, L.T = 22.7% duty cycle a104501eh_g5 Output power Efficiency 28 30 32 34 36 38 40 42 44 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C P.W = 3.354mS, Burts = 7μS On, 6μS Off, L.T = 22.7% duty cycle a104501eh_g6 900 1000 1100 1200 1300 Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT = 450W (peak), P.W = 3.354mS, Burts = 7μS On, 6μS Off, L.T = 22.7% duty cycle a104501eh_g7 Gain Efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 900 1000 1100 1200 1300 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), P.W = 3.354mS, Burts = 7μS On, 6μS Off, L.T = 22.7% duty cycle Power Droop IRL a104501eh_g8

Data Sheet 5 of 9 Rev. 02, 2014-07-22 PTVA104501EH Broadband Circuit Impedance Z Source Z Load G S D Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Z l [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] Load Pull at Max G T Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Z l [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] Load Pull at Max Effi ciency Point – 16 µs pulse width, 10% duty cycle, class AB, V DD = 50 V, 200 mA Freq [MHz] Z l [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, V DD = 50 V, 200 mA Freq [MHz] Z l [] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [] Load Pull Performance Freq [MHz] Z Source  Z Load  Rj XRj X 960 2.04 –0.30 0.79 –0.02 1030 1.71 –0.18 0.73 0.64 1090 1.45 0.09 0.95 1.09 1150 1.23 0.41 1.26 0.98 1215 1.07 0.77 0.71 0.93

Data Sheet 6 of 9 Rev. 02, 2014-07-22 Reference Circuit Reference circuit assembly diagram (not to scale) Find Gerber fi les for this test fi xture on the Infi neon Web site at www.infi neon.com/rfpower PTVA104501EH_IN_02 RO3010,025 (62) C102 RF_IN RF_OUT VDD ptva104501eh_CD_07-21-2014 R101 C103 C105 C104 C106 C108 C107 C109 C205 C204 C208 C207 C209 C201 C203 C210 C111 R103 S3 R106 R102 C101 R105 C110 R104 PTVA104501EH_OUT_02 RO3010,025 (62) C202 C206 R202 R201 C211 VDD

Data Sheet 7 of 9 Rev. 02, 2014-07-22 PTVA104501EH Components Information Component Description Suggested Manufacturer P/N Input C101, C103 Capacitor, 39 pF ATC 100B 390 C102 Capacitor, 3.3 pF ATC 800A 3R3 C104 Capacitor, 56 pF ATC 100B 560 C105 Capacitor, 3.9 pF ATC 800A 3R9 C106 Capacitor, 2.4 pF ATC 800A 2R4 C107, C110, C111 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C108 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C109 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA R101 Resistor, 20  Panasonic Electronic Components ERJ-8GEYJ200V R102 Resistor, 1k  Panasonic Electronic Components ERJ-8GEYJ102V R103 Resistor, 2k  Panasonic Electronic Components ERJ-8GEYJ202V R104 Resistor, 1.2k  Panasonic Electronic Components ERJ-3GEYJ122V R105 Resistor, 1.3k  Panasonic Electronic Components ERJ-3GEYJ132V R106 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V S1 Transistor Infi neon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k  Bourns Inc. 3224W-1-202E Output C201 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C202 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C203, C210 Capacitor, 39 pF ATC 100B 390 C204, C207 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C205, C208 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C206 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C209 Capacitor, 56 pF ATC 100B 560 C211 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5.6  Panasonic Electronic Components ERJ-8RQJ5R6V Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA104501EH Test Fixture Part No. LTN/PTVA104501EH V1 PCB Rogers 3010, 0.635 mm [0.025"] thick, 2 oz. copper,  r = 10.2

Data Sheet 8 of 9 Rev. 02, 2014-07-22 Package Outline Specifications Package H-33288-2 Find the latest and most complete information about products and packaging at the Infi neon Internet page http://www.infi neon.com/rfpower Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 34.036 [1.340 ] 22.352±.200 [.880±.008] 1.575 [.062] SPH 1.016 [.040] CL 3.962+.254 –.127 .156 +.010 –.005 ] 27.940 [1.100] 2X 12.700 [.500] 19.431±.510 [.765±.020 ] 9.779 [.385] 2X 4.826±.510 [.190±.020] 45° X 2.032 [45° X .080] 4X R1.524 [R.060] 2X R1.626 [R.064] LC D S G CL 9.398 [.370]

Infi neon Technologies AG

85579 Neubiberg, Germany

© 2014 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce ( www.infi neon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infi neon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet – DRAFT ONL Y 9 of 9 Rev. 02, 2014-07-22 PTVA104501EH V1

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-05-21 Advance All Data Sheet refl ects advance specifi cation for product development 02 2014-07-22 Production All Data Sheet refl ects released product specifi cation