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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Broadband internal input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 450 W peak under RF pulse, 128 µS, 10% duty cycle. 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle

960 MHz

1030 Mhz

1090 MHz

1150 MHz

1215 MHz

a104501eh_g1 RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 450 W (peak), ƒ1 = 960 MHz, ƒ2 = 1090 MHz, ƒ3 = 1215 MHz, RF pulse 128 µs, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.5 — dB Drain Efficiency hD 53 58 — % Gain Flatness DG — 0.85 1.8 dB Return Loss IRL — –9.5 –6 dB

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 2PTVA104501EH DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 111 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 200 mA VGS 3.0 3.5 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance RqJC 0.25 °C/W (TCASE = 70°C, 430 W CW, ƒ = 1090 MHZ, VDD = 50 V, IDQ = 200 mA)

Ordering Information

Type and Version Order Code Package Description Shipping PTVA104501EH V1 R0 PTVA104501EH-V1-R0 H-33288-2 Tape & Reel, 50 pcs PTVA104501EH V1 R250 PTVA104501EH-V1-R250 H-33288-2 Tape & Reel, 250 pcs RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 200 mA, Input signal (tr = 7.0 ns, tf = 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test Mode of Operation ƒ (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) @ P1dB tr (ns) @P1dB tf (ns) @P1dBGain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W) 128 µs, 10% 960 –7.5 18.0 56 460 16.0 53 490 0.15 5 <2 1030 –13.0 18.5 59 470 16.5 60 540 0.15 5 <2 1090 –8.0 17.8 61 510 15.8 61 590 0.20 5 <2 1150 –15.0 18.1 59 540 16.1 60 620 0.20 5 <2 1215 –9.0 18.3 56 460 16.3 53 510 0.20 5 <2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 3PTVA104501EH Typical RF Performance (data taken in production test fixture) 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle a104501eh_g1 12 28 30 32 34 36 38 40 42 44 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle a104501eh_g2 900 1000 1100 1200 1300 Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), 128 µs pulse width, 10% duty cycle a104501eh_g3 Gain Efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 900 1000 1100 1200 1300 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), 128 µs pulse width, 10% duty cycle Power Droop IRL a104501eh_g4

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 4PTVA104501EH Typical RF Performance (cont.) 28 30 32 34 36 38 40 42 44 Efficiency (%) POUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, P.W = 3.354mS, Burts = 7µS On, 6µS Off, L.T = 22.7% duty cycle a104501eh_g5 Output power Efficiency 28 30 32 34 36 38 40 42 44 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C P.W = 3.354mS, Burts = 7µS On, 6µS Off, L.T = 22.7% duty cycle a104501eh_g6 900 1000 1100 1200 1300 Efficiency (%) Gain (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT = 450W (peak), P.W = 3.354mS, Burts = 7µS On, 6µS Off, L.T = 22.7% duty cycle a104501eh_g7 Gain Efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 900 1000 1100 1200 1300 Power Droop (dB) IRL (dB) Frequency (MHz) Pulsed RF Performance VDD = 50V, IDQ = 200mA, POUT= 450W (peak), P.W = 3.354mS, Burts = 7µS On, 6µS Off, L.T = 22.7% duty cycle Power Droop IRL a104501eh_g8

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 5PTVA104501EH Typical RF Performance (cont.) 0 50 100 150 200 250 300 Efficiency (%) Gain (dB) POUT (W) Power Sweep, Pulsed RF VDD = 36 V, IDQ = 150 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle

1240 MHz

a104501eh_g9 Gain Efficiency 0 50 100 150 200 250 Effciency (%) Gain (dB) POUT (W) CW Power Sweep VDD = 36 V, IDQ = 150 mA, TCASE = 25 ºC a104501eh_g10 Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 6PTVA104501EH Broadband Circuit Impedance Z Source Z Load G S D Load Pull at Max POUT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max GT Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull at Max Efficiency Point – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Z Optimum – 16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 200 mA Freq [MHz] Zl [W] PIN [dBm] POUT [dBm] POUT [W] PG [dB] PAE Eff [%] ZOUT [W] Load Pull Performance Freq [MHz] Z Source W Z Load W R jX R jX 960 2.04 –0.30 0.79 –0.02 1030 1.71 –0.18 0.73 0.64 1090 1.45 0.09 0.95 1.09 1150 1.23 0.41 1.26 0.98 1215 1.07 0.77 0.71 0.93

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 7PTVA104501EH Reference Circuit Reference circuit assembly diagram (not to scale) Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF PTVA104501EH_IN_03 C102 RF_IN RF_OUT VDD pt v a10 450 1eh _C D_06 - 14 - 20 18 R101 C103 C105 C104 C106 C108 C107 C109 C205 C204 C208 C207 C209 C201 C203 C210 C111 R103 S3 R106 R102 C101 R105 C110 R104 PTVA104501EH_OUT_03 RO3010,025 (62) C202 C206 R202 R201 C211 VDD RO3010,025 (62)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 8PTVA104501EH Components Information Component Description Suggested Manufacturer P/N Input C101, C103 Capacitor, 39 pF ATC 100B 390 C102 Capacitor, 3.3 pF ATC 800A 3R3 C104 Capacitor, 56 pF ATC 100B 560 C105 Capacitor, 3.9 pF ATC 800A 3R9 C106 Capacitor, 2.4 pF ATC 800A 2R4 C107, C110, C111 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K C108 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C109 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA R101 Resistor, 20 W Panasonic Electronic Components ERJ-8GEYJ200V R102 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ102V R103 Resistor, 2k W Panasonic Electronic Components ERJ-8GEYJ202V R104 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V R105 Resistor, 1.3k W Panasonic Electronic Components ERJ-3GEYJ132V R106 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V S1 Transistor Infineon Technologies BCP56 S2 Voltage Regulator Texas Instruments LM78L05ACM S3 Potentiometer, 2k W Bourns Inc. 3224W-1-202E Output C201 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C202 Capacitor, 10 µF Cornell Dubilier Electronics (CDE) SEK100M100ST C203, C210 Capacitor, 39 pF ATC 100B 390 C204, C207 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C205, C208 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C206 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C209 Capacitor, 56 pF ATC 100B 560 C211 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5.6 W Panasonic Electronic Components ERJ-8RQJ5R6V Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA104501EH Test Fixture Part No. LTN/PTVA104501EH V1 PCB Rogers 3010, 0.635 mm [0.025"] thick, 2 oz. copper, εr = 10.2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14 9PTVA104501EH Package Outline Specifications Package H-33288-2 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 0.25 micron [10 microinch] max. 34.036 [1.340 ] 22.352±.200 [.880±.008] 1.575 [.062] SPH 1.016 [.040] CL 3.962+.254 –.127 .156 +.010 –.005 ] 27.940 [1.100] 2X 12.700 [.500] 19.431±.510 [.765±.020 ] 9.779 [.385] 2X 4.826±.510 [.190±.020] 45° X 2.032 [45° X .080] 4X R1.524 [R.060] 2X R1.626 [R.064] LC D S G CL 9.398 [.370]

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2013-05-21 Advance All Data Sheet reflects advance specification for product development 02 2014-07-22 Production All Data Sheet reflects released product specification 02.1 2016-04-19 Production 2 1, 2 Updated conditions for drain leakage current in DC Characteristics Added ESD rating, updated ordering information 02.2 2017-01-31 Production 2 Corrected typo in package description, updated operating voltage and junction temperature 02.3 2017-09-20 Production 5 Added two new graphs (V DD = 36V) 03 2018-06-14 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 03, 2018-06-14 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTVA104501EH