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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- Broadband input matching
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32µS ON / 18µS OFF) X 80, LTDF = 6.4%. RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V , IDQ = 0.15 A, POUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 21 dB Drain Efficiency hD 62 65 — % 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) Pout (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128µs, 10% 128µs, 1% MODE-S a101k02ev_1-1 Gain Efficiency
Data Sheet 2 of 9 Rev. 02.1, 2016-04-19 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 75 mA per side, Input signal (tr = 5 ns, tf = 6.5 ns), TCASE = 25°C, class AB test P1dB P3dB Mode of operation ƒ IRL Gain Eff POUT Gain Eff POUT Pdroop(pulse) tr tf (MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 1000 W (ns) (ns) 128 µs, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8 128 µs, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8 MODE-S 1030 20 17.9 54 930 14.9 55 1060 0.45 7 8 (32µS ON / 18µS OFF)X80, LTDF=6.4% 128 µs, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8 128 µs, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 1000 W, MODE–S) RqJC 0.16 °C/W
Data Sheet 3 of 9 Rev. 02.1, 2016-04-19 PTVA101K02EV
Ordering Information
Type and Version Order Code Package and Description Shipping PTVA101K02EV V1 R0 PTVA101K02EVV1R0XTMA1 H-36275-4, bolt-down Tape & Reel, 50pcs PTVA101K02EV V1 R250 PTVA101K02EVV1R250XTMA1 H-36275-4, bolt-down Tape & Reel, 250pcs Typical RF Performance (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz) 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) Pout (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128µs, 10% 128µs, 1% MODE-S a101k02ev_1-1 Gain Efficiency 20 24 28 32 36 40 44 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128µs, 10% 128µs, 1% MODE-S Gain a101k02ev_1-2
Data Sheet 4 of 9 Rev. 02.1, 2016-04-19 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) POUT (dBm) Power Sweep, Pulsed RF, Vdd vs Gain&Eff VDD = 50 V, IDQ = 150 mA, TCASE = 25°C 128µs, 10% D.C, ƒ = 1030 MHz 30 V 35 V 40 V 45 V 50 V Efficiency Gain a101k02ev_1-5 Typical RF Performance (tested with LTN/PTVA101K02EV E6 test fixture, 1090 MHz) 20 24 28 32 36 40 44 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz 128µs, 10% 128µs, 1% Gain a101k02ev_1-4 0 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) POUT (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz 128µs, 10% 128µs, 1% Gain Efficiency a101k02ev_1-3 Typical RF Performance (cont.) (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz)
Data Sheet 5 of 9 Rev. 02.1, 2016-04-19 PTVA101K02EV Broadband Circuit Impedance Z Source Z Load G D G S D Note: Measurement on single side. Freq [MHz] Z Source W Z Load W R jX R jX 1030 2.00 1.51 1.48 0.07 1090 2.35 0.64 1.12 –0.28 Each Side Load Pull Performance –16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 100 mA Max Output Power Max Efficiency Z Optimum Freq [MHz] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] ZSource [W] Load Pull Performance
Data Sheet 6 of 9 Rev. 02.1, 2016-04-19 Reference Circuit (LTN/PTVA101K02EV V1 test fixture, 1030 MHz) Reference circuit assembly diagram (not to scale)* + + PTVA101K02EV_IN_02 RF_IN C102 PTVA101K02EV_OUT_01
1030 MHz
RO6006, .025 (62) RF_OUT C101 C103 C104 C212 C105 R201 C108 C107 R103 R102 R101 C106 R811 R807 C801 R801 R808 C210 R806 C803 C804 R809 R805 R810 S1S3 S2 R104 R803 R804 R802 R812 C802 RO6006, .025 (62) C203 C208 C206 R202 C202 C201 C214 C209 C211 C213 C205 C204 C207 VDD C215 C216 p t v a 1 0 1 K 0 2 e v _ C D _ 0 4 - 1 7 - 2 0 1 3 VDD
Data Sheet 7 of 9 Rev. 02.1, 2016-04-19 PTVA101K02EV Reference Circuit (cont.) DUT Test Fixture Part No. PCB Frequency (MHz) PTVA101K02EV LTN/PTVA101K02EV V1 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15 PTVA101K02EV LTN/PTVA101K02EV E4 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 6.15
1090 MHz
PTVA101K02EV LTN/PTVA101K02EV E6 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 PTVA101K02EV LTN/PTVA101K02EV E8 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, εr = 10.2 Reference Circuit Assembly Components Information Component Description Suggested Manufacturer P/N Input C101, C106 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C102, C105, C107, C108 Capacitor, 39 pF ATC ATC100B390KW500XB C103, C104 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C801, C802, C803, C804 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R104, R801, R807 Resistor, 10 Ohm Panasonic Electronic Components ERJ-8GEYJ100V R102, R103 Resistor, 100 Ohm Panasonic Electronic Components ERJ-8GEYJ101V R802, R808 Resistor, 6200 Ohm Panasonic Electronic Components ERJ-8GEYJ623V R803, R809 Resistor, 1300 Ohm Panasonic Electronic Components ERJ-3GEYJ132V R804, R810 Resistor, 1200 Ohm Panasonic Electronic Components ERJ-3GEYJ122V R805, R806, R811, R812 Resistor, 2000 Ohm Panasonic Electronic Components ERJ-8GEYJ202V S1, S4 Transistor Infineon Technologies BCP56 S2, S5 Voltage regulator National Semiconductor LM7805 S3, S6 Potentiometer, 2k ohm Bourns Inc. 3224W-202ECT -ND Output C201, C202, C203, C214 Capacitor, 39 pF ATC ATC100B390KW500XB C204, C209 Capacitor, 100 µF Panasonic Electronic Components EEV-HD1V101P C205, C211 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C206, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C207, C213 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C208, C212 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C215, C216 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5600 Ohm Panasonic Electronic Components ERJ-8GEYJ562V
Data Sheet 8 of 9 Rev. 02.1, 2016-04-19 Package Outline Specifications Package H-36275-4 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower S 35.56 [1.400] 4X 11.68 [.460] CL 2X 45° X 1.19 [45° X .047] 10.16 [.400] 9.144 [.360] C LC 2x 2.03 [.080] REF 13.72 [.540] 16.612±0.500 [.654±.020] 2X R1.59 [R.062] 3.23±0.51 [.127±.020] 8X R0.51+0.13 -0.51 [R.020+.005 -.020 ] LC L 41.15 [1.620] 31.242±0.280 [1.230±.011]1.63 [.064] 2.13 [.084] SPH C LCLC L 4.58+0.25 -0.13 .180+.010 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
81726 Munich, Germany
© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 9 of 9 Rev. 02.1, 2016-04-19 PTVA101K02EV V1 Revision History: 2016-04-19 Data Sheet Previous Version: 2013-04-15, Data Sheet Page Subjects (major changes since last revision) 1, 2 Added ESD rating, updated ordering information