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Technical content

Features

 Broadband input matching  High gain and effi ciency  Integrated ESD protection  Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)  Low thermal resistance  Pb-free and RoHS compliant  Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32µS ON / 18µS OFF) X 80, LTDF = 6.4%. RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fi xture) VDD = 50 V, IDQ = 0.15 A, POUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain G ps 17 18 21 dB Drain Efficiency D 62 65 — % 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) Pout (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128μs, 10% 128μs, 1% MODE-S a101k02ev_1-1 Gain Efficiency PTVA101K02EV

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 2PTVA101K02EV RF Characteristics Typical RF Performance (not subject to production test, verifi ed by design/characterization in Wolfspeed test fi xture) VDD = 50 V, IDQ = 75 mA per side, Input signal (tr = 5 ns, tf = 6.5 ns), TCASE = 25°C, class AB test P1dB P 3dB Mode of operation ƒ IRL Gain Eff P OUT Gain Eff P OUT P droop(pulse) tr t f (MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 1000 W (ns) (ns) 128 µs, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8 128 µs, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8 MODE-S 1030 20 17.9 54 930 14.9 55 1060 0.45 7 8 (32µS ON / 18µS OFF)X80, LTDF=6.4% 128 µs, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8 128 µs, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 105 — — V Drain Leakage Current V DS = 50 V, VGS = 0 V I DSS — — 1 µA V DS = 105 V, VGS = 0 V I DSS — — 10 µA On-State Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.1 —  Operating Gate Voltage V DS = 50 V, IDQ = 150 mA V GS 3 3.35 4 V Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 105 V Gate-Source Voltage V GS –6 to +12 V Operating Voltage V DD 0 to +55 V Junction Temperature T J 225 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 1000 W, MODE–S) R JC 0.16 °C/W

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 3PTVA101K02EV

Ordering Information

Type and Version Order Code Package and Description Shipping PTVA101K02EV V1 R0 PTVA101K02EV-V1-R0 H-36275-4, bolt-down Tape & Reel, 50pcs PTVA101K02EV V1 R250 PTVA101K02EV-V1-R250 H-36275-4, bolt-down Tape & Reel, 250pcs Typical RF Performance (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz) 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) Pout (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128μs, 10% 128μs, 1% MODE-S a101k02ev_1-1 Gain Efficiency 20 24 28 32 36 40 44 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 128μs, 10% 128μs, 1% MODE-S Gain a101k02ev_1-2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 4PTVA101K02EV 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) POUT (dBm) Power Sweep, Pulsed RF, Vdd vs Gain&Eff VDD = 50 V, IDQ = 150 mA, TCASE = 25°C 128μs, 10% D.C, ƒ = 1030 MHz 30 V 35 V 40 V 45 V 50 V Efficiency Gain a101k02ev_1-5 Typical RF Performance (tested with LTN/PTVA101K02EV E6 test fixture, 1090 MHz) 20 24 28 32 36 40 44 48 Gain (dB) PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz 128μs, 10% 128μs, 1% Gain a101k02ev_1-4 0 30 35 40 45 50 55 60 65 Drain Efficiency (%) Gain (dB) POUT (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1090 MHz 128μs, 10% 128μs, 1% Gain Efficiency a101k02ev_1-3 Typical RF Performance (cont.) (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz)

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 5PTVA101K02EV Broadband Circuit Impedance Z Source Z Load G D G S D Note: Measurement on single side. Freq [MHz] Z Source  Z Load  Rj XRj X 1030 2.00 1.51 1.48 0.07 1090 2.35 0.64 1.12 –0.28 Each Side Load Pull Performance –16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 100 mA Max Output Power Max Effi ciency Z Optimum Freq [MHz] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [] ZSource [] Load Pull Performance

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 6PTVA101K02EV Reference Circuit (LTN/PTVA101K02EV V1 test fixture, 1030 MHz) Reference circuit assembly diagram (not to scale)* + + PTVA101K02EV_IN_02A RF_IN C102 PTVA101K02EV_OUT_01A

1030 MHz

RO6006, .025 (62) RF_OUT C101 C103 C104 C212 C105 R201 C108 C107 R103 R102 R101 C106 R811 R807 C801 R801 R808 C210 R806 C803 C804 R809 R805 R810 S1S3 S2 R104 R803 R804 R802 R812 C802 RO6006, .025 (62) C203 C208 C206 R202 C202 C201 C214 C209 C211 C213 C205 C204 C207 VDD C215 C216 pt v a10 1K02 ev _ C D_ W S_ 06 - 12 - 20 18 VDD

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 7PTVA101K02EV Reference Circuit (cont.) DUT Test Fixture Part No. PCB Frequency (MHz) PTVA101K02EV LTN/PTVA101K02EV V1 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, r = 6.15 PTVA101K02EV LTN/PTVA101K02EV E4 Rogers 6006, 0.635 mm [0.025”] thick, 2 oz. copper, r = 6.15

1090 MHz

PTVA101K02EV LTN/PTVA101K02EV E6 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, r = 10.2 PTVA101K02EV LTN/PTVA101K02EV E8 Rogers 3010, 0.635 mm [0.025”] thick, 2 oz. copper, r = 10.2 Reference Circuit Assembly Components Information Component Description Suggested Manufacturer P/N Input C101, C106 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C102, C105, C107, C108 Capacitor, 39 pF ATC ATC100B390KW500XB C103, C104 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C801, C802, C803, C804 Capacitor, 1000 pF Panasonic Electronic Components ECJ-1VB1H102K R101, R104, R801, R807 Resistor, 10 Ohm Panasonic Electronic Components ERJ-8GEYJ100V R102, R103 Resistor, 100 Ohm Panasonic Electronic Components ERJ-8GEYJ101V R802, R808 Resistor, 6200 Ohm Panasonic Electronic Components ERJ-8GEYJ623V R803, R809 Resistor, 1300 Ohm Panasonic Electronic Components ERJ-3GEYJ132V R804, R810 Resistor, 1200 Ohm Panasonic Electronic Components ERJ-3GEYJ122V R805, R806, R811, R812 Resistor, 2000 Ohm Panasonic Electronic Components ERJ-8GEYJ202V S1, S4 Transistor Infi neon Technologies BCP56 S2, S5 Voltage regulator National Semiconductor LM7805 S3, S6 Potentiometer, 2k ohm Bourns Inc. 3224W-202ECT -ND Output C201, C202, C203, C214 Capacitor, 39 pF ATC ATC100B390KW500XB C204, C209 Capacitor, 100 µF Panasonic Electronic Components EEV-HD1V101P C205, C211 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C206, C210 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C207, C213 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C208, C212 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C215, C216 Capacitor, 6800 µF Panasonic Electronic Components ECO-S2AP682EA R201, R202 Resistor, 5600 Ohm Panasonic Electronic Components ERJ-8GEYJ562V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12 8PTVA101K02EV Package Outline Specifications Package H-36275-4 ;ƒ; >ƒ;@ /& [ 5() >“@ >5@ >“@ /& / >“@ >@63+ & /&/& / +BSRBB Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2012-06-07 Preliminary All Data Sheet refl ects preliminary specifi cation 02 2013-04-15 Production 1 Data Sheet refl ects released product specifi cation 02.1 2016-04-19 Production 1, 2 Added ESD rating, updated ordering information 02.2 2017-02-09 Production 2 Updated operating voltage and junction temperature 03 2018-06-12 Production All Converted to Wolfspeed Data Sheet www.wolfspeed.comRev. 03, 2018-06-12 Notes Disclaimer Specifi cations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in diff erent applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 9PTVA101K02EV