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Technical content

Features

 Typical CW performance in a combined-lead 50-ohm single-ended fi xture, 780 MHz, 50 V - Output power at P 1dB = 158 W - Gain = 18.2 dB - Effi ciency = 52%  Typical pulsed CW performance in a combined-lead 50-ohm single-ended fi xture, 870 MHz, 50 V - Output power at P 3dB = 280 W - Gain = 16.2 dB - Effi ciency = 50%  Integrated ESD protection, Human Body Model class 2 (per JESD22-A114)  Capable of withstanding a 10:1 load mismatch at

50 V, 63 W (CW) output power

 Low thermal resistance  Pb-free and RoHS compliant RF Specifications Single-carrier WCDMA Characteristics (device with fl at leads tested in an Infi neon Doherty production test fi xture) VDD = 50 V, IDQ = 400 mA, VGSpeak = 1.9 V, POUT = 63 W average, ƒ = 803 MHz. 3GPP WCDMA signal: 3.84 MHz bandwidth, 10 dB PAR @0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.5 — dB Drain Efficiency ηD 40 45 — % Adjacent Channel Power Ratio ACPR — –34 –32 dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz

3.84 MHz bandwidth, 10 dB PAR

PAR @ 0.01% CCDF a093002tc-gr1a

Data Sheet 2 of 10 Rev. 04, 2014-06-16 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = 0 V, IDS = 10 mA V (BR)DSS 105 — — V Drain Leakage Current V DS = 50 V, VGS = 0 V I DSS — — 1.0 µA V DS = 105 V, VGS = 0 V I DSS — — 10.0 µA Gate Leakage Current V GS = 10 V, VDS = 0 V I GSS — — 1.0 µA On-state Resistance V GS = 10 V, VDS = 0.1 V R DS(on) — 0.265 — Ω Operating Gate Voltage (main) V DS = 50 V, IDQ = 400 mA V GS — 3.8 — V (peak) V DS = 50 V, IDQ = 0 A V GS — 1.9 — V Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 105 V Gate-source Voltage V GS –6 to +12 V Junction Temperature T J 200 °C Storage Temperature Range T STG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.44 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping PTVA093002TC V1 R250 PTVA093002TCV1R250XTMA1 H-49248H-4, earless, ceramic open-cavity, formed leads, surface mount Tape & Reel, 250 pcs

Data Sheet 3 of 10 Rev. 04, 2014-06-16 PTVA093002TC Typical Performance (data taken in a reference test fixture) -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 780 MHz PAR @ 0.01% CCDF a093002tc-gr1b -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 50 V, IDQ = 400 mA, ƒ = 803 MHz PAR @ 0.01% CCDF a093002tc-gr1c -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Drain Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA,

758 MHz

780 MHz

803 MHz

Drain Efficiency (%) Gain (dB) Frequency (MHz) Broadband Performance 3GPP WCDMA single-carrier VDD = 50 V, IDQ = 400 mA, POUT = 48 dBm, PAR = 10 dB Efficiency Gain a093002tc-gr3

Data Sheet 4 of 10 Rev. 04, 2014-06-16 Typical Performance (cont.) -35 -30 -25 -20 -15 -10 -40 -30 -20 -10 650 700 750 800 850 900 Return Loss (dB) ACP Low, ACP Up (dBc) Frequency (MHz) Broadband Performance 3GPP WCDMA single-carrier VDD = 50 V, IDQ = 400 mA, POUT = 48 dBm, PAR = 10 dB Return Loss a093002tc-gr4 ACP Up ACP Low 27 31 35 39 43 47 51 55 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 50 V, IDQ = 400 mA (series show frequency) Efficiency Gain a093002tc-gr5 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 400 mA, ƒ = 758 MHz Gain Efficiency a093002tc-gr6a VDD = 46 V VDD = 50 V VDD = 54 V 27 31 35 39 43 47 51 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 400 mA, ƒ = 780 MHz Gain Efficiency a093002tc-gr6b VDD = 46 V VDD = 50 V VDD = 54 V

Data Sheet 5 of 10 Rev. 04, 2014-06-16 PTVA093002TC Typical Performance (cont.) 27 31 35 39 43 47 51 55 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at selected VDD IDQ = 400 mA, ƒ = 803 MHz Gain Efficiency a093002tc-gr6c VDD = 46 V VDD = 50 V VDD = 54 V -20 -15 -10 700 750 800 850 900 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) CW Small Signal Performance VDD = 50 V, IDQ = 400 mA Return Loss Gain a093002tc-gr7 See next page for Load Pull

Data Sheet 6 of 10 Rev. 04, 2014-06-16 Load Pull Performance Main side pulsed CW signal: 160 µsec, 10% duty cycle; 50 V, VGS = 3.8 V, IDQ = 350 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, IDQ = 75 mA P1dB Class C Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] Zl [Ω] Gain [dB] POUT [dBm] POUT [W] PAE [%] MHz Ohm Ohm dB dBm W % Ohm dB dBm W % Z Source Z Load SG1 Reference Circuit, tuned for 758 – 803 MHz DUT PTVA093002TC Test Fixture Part No. LTD/PTVA093002TC V1 PCB Rogers RO4360, 0.508 mm [.020"] thick, 2 oz. copper, εr = 6.4 Find Gerber fi les for this reference fi xture on the Infi neon Web site at (www.infi neon.com/rfpo wer)

Data Sheet 7 of 10 Rev. 04, 2014-06-16 PTVA093002TC Component Information Component Description Manufacturer P/N Input C101 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150XB C102 Chip capacitor, 3.9 pF ATC ATC800A3R9CW150XB C104, C107 Capacitor, 10 µF Murata Electronics North America LLL31BC70G106MA01L C105, C106, C108, C109 Chip capacitor, 6 pF ATC ATC100A6R0CW150XB R101, R102 Resistor, 10 Ohm Panasonic – ECG ERJ-3GEYJ100V R103 Resistor, 50 Ohm Anaren RFP-060120A15Z50 U1 Hybrid Coupler, 4 dB, 90° Anaren X3C07P-04S Reference circuit assembly diagram (not to scale) c093002tc_cd_2014-06-10 RF_OUT RF_IN RO4360, .020 PTVA093002TC_IN_03 (62) C105 C108 C103 C102 C101 C107 R102 C106 C104 R103 C109 R101 (194)RO4360, .020 PTVA093002TC_OUT_03 C206 C217 C213 C201 C203 C202 C208 C207 C204 C215 C214 C212 C218 C210 C216 C211 C209 VGG VDD VDD C205PTVA093002TC Reference Circuit, tuned for 758 – 803 MHz (cont.) (table continued on page 8)

Data Sheet 8 of 10 Rev. 04, 2014-06-16 Component Information (cont.) Component Description Manufacturer P/N Output C206 Chip capacitor, 3.3 pF ATC ATC100A3R3CW150XB C207 Chip capacitor, 5.6 pF ATC ATC800A5R6CW150XB C208, C210, C217, C218 Chip capacitor, 6 pF ATC ATC100A6R0CW150XB C207, C209 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C209, C211 Capacitor, 100 µF , 100 V United Chemi-Con EMVE101ARA101MKE0S Reference Circuit (cont.) S G1 G2 D1 D2 Pin Description D1, D2 Drain G1, G2 Gate S Source (fl ange) Lead connections for PTVA093002TC Peak Main Pinout Diagram (top view)

Data Sheet 9 of 10 Rev. 04, 2014-06-16 PTVA093002TC Package Outline Specifications Package H-49248H-4, formed leads Diagram Notes—unless otherwise specifi ed: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005]. 4. Pins: D1, D2 – drain; G1, G2 – gate; S – source (fl ange). 6. Gold plating thickness: fl ange – 0.25 micron [10 microinch] max; leads – 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infi neon Internet page (www.infi neon.com/rfpo wer) h-49248h-4_gw_r01_06-02-2014 CL 4X 5° TYP. 4X 0.13±0.08 [.005±.003] SPH 4X 1.00+0.25 –0.10 .039+.010 –.004 4X 1.49±0.25 [.059±.010] 14.75±0.50 [.581±.020] 19.81±0.20 [.780±.008] 20.57 [.810] 3.76±0.25 [.148±.010] (1.02 [.040]) S 4X R0.51+0.38 –0.13 R.020+.015 –.005 CL CL 2X 12.70 [.500] 4X 3.81 [.150] 9.78 [.385] (8.89 [.350]) [.025] (5.08 [.200]) G1 G2 D1 D2 [ ] 45° x .64

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: (highpowerRF@infi neon.com) T o request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Data Sheet 10 of 10 Rev. 04, 2014-06-16 Edition 2014-06-16 Published by Infi neon Technologies AG

85579 Neubiberg, Germany

© 2014 Infi neon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infi neon Technologies Offi ce (www.infi neon.com/rfpo wer). W arnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infi neon Technologies Offi ce. Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In- fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTVA093002TC V1

Revision History

Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2014-01-08 Advance All New product, proposed only. 02 2014-01-29 Advance All Package type number and confi guration revised. 03 2014-05-02 Advance All Package type number revised. 04 2014-06-16 Production All Data Sheet now represents released product specifi cations, including reference circuit and performance information