DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Broadband internal input matching
  • Typical CW performance, 925 MHz, 48 V - Output power at P1dB = 223 W - Gain = 20.7 dB - Efficiency = 52%
  • Capable of handling 10:1 VSWR @ 48 V, 80 W CW output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PTVA092407NF is a 240-watt LDMOS FET manufactured with Infineon's 48-V LDMOS process. It is designed for use in multi-stan- dard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 869 MHz to 960 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 48 V, IDQ = 900 mA, POUT = 80 W avg, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 20.5 22 — dB Drain Efficiency hD 36 39 — % Adjacent Channel Power Ratio ACPR — –29.9 –28 dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptva092407nf_g1

Data Sheet 2 of 9 Rev. 02.4, 2017-02-07 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA V DS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance V GS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage V DS = 48 V, IDQ = 0.9 A VGS 3 3.75 4 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70°C, 240 W CW) R qJC 0.31 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA092407NF V1 R5 PTVA092407NF V1R5XUMA1 PG-HBSOF-4-1, plastic package Tape & Reel, 500 pcs

Data Sheet 3 of 9 Rev. 02.4, 2017-02-07 PTVA092407NF Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 25 30 35 40 45 50 55 Efficiency(%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 960MHz 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Eff ptva092407nf_g2 -35 -30 -25 -20 -15 -10 -40 -35 -30 -25 -20 -15 -10 825 875 925 975 1025 1075 1125 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ= 900 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptva092407nf_g4 825 875 925 975 1025 1075 1125 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 900 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva092407nf_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ =900mA

925 MHz

942.5 MHz

960 MHz

ptva092407nf_g5

Data Sheet 4 of 9 Rev. 02.4, 2017-02-07 Typical RF Performance (cont.) Load Pull Performance Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 463 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] PAE [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] PAE [%] P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] PAE [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] PAE [%] 29 33 37 41 45 49 53 57 Efficiency (%) Power Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 900 mA, ƒ = 960MHz VDD = 44 V VDD = 48 V VDD = 52 V Gain Efficiency ptva092407nf_g6 -14 -12 -10 875 900 925 950 975 1000 1025 Input Return Loss (dB) Power Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ = 900 mA IRL Gain gtva092407nf_g7

Data Sheet 5 of 9 Rev. 02.4, 2017-02-07 PTVA092407NF Reference Circuit, 869 – 960 MHz Reference circuit assembly diagram (not to scale) RO4350, 20 MIL (272) PTVA092407NF_OUT_03APTVA092407NF_IN_03A RO4350, 20 MIL (272) C103 C102 C101 R101 C104 C205 C207 C202 C206 C201 C203 C204 RF_IN RF_OUT VDD VDD VGS

Data Sheet 6 of 9 Rev. 02.4, 2017-02-07 Reference Circuit (cont.) Pinout Diagram (top view) Pin Description D Drain G Gate S Source (flange) V Drain video decoupling (use only for decoupling), not for DC biasG D Reference Circuit Assembly DUT PTVA092407NF V1 Test Fixture Part No. LTN/PTVA092407NF V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 869 – 960 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101 Capacitor, 47 pF ATC ATC100B470KW500XT C102 Capacitor, 75 pF ATC ATC100B750JW500XT C103 Capacitor, 100 µF ATC PCE4442TR-ND C104 Capacitor, 3.6 pF ATC ATC100B3R6CW500XT R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C202, C203, C207 Capacitor, 100 µF Panasonic Electronic Components EEE-FP1V101AP C204, C205 Capacitor, 75 pF ATC ATC100B750JW500XT C206 Capacitor, 100 pF ATC ATC100A101JW150XT S V V

Data Sheet 7 of 9 Rev. 02.4, 2017-02-07 PTVA092407NF Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package PG-HBSOF-4-1 10° PG-HBSOF-4-1_part1_03_07-13-2016 0.25 3.51 R0.5 22.7 ± 0.15 0.5 16.75 9.75 9.75 3.3 1 0.63 1.52 2 X 1.19 25.4 0.63 16.75 2 X 1.61 1.52 1.57 ± 0.15 1.17 Y 0.1 MAX. 16.76 10° G DV V 25.4 Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. 1.57 PG-HBSOF-4-1_05_01-17-2017 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – VDD12. Pins: D = drain; G = gate; S = source; V = Drain video decoupling (use only for decoupling), not for DC bias.

Data Sheet 8 of 9 Rev. 02.4, 2017-02-07 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package PG-HBSOF-4-1 VIEW Y 23.26 24.4 0.05 0.50.5 21.3 5.4 3.02 R0.4 2.7 0.75 PG-HBSOF-4-1_part2_03_07-13-2016 G D V V S Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. PG-HBSOF-4-1_05_01-17-2017 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – VDD12. Pins: D = drain; G = gate; S = source; V = Drain video decoupling (use only for decoupling), not for DC bias.

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-03-17 Advance All Data Sheet reflects advance specification for product development 02 2016-09-12 Production All Data Sheet reflects released product specification 02.1 2016-11-23 Production 2 Revised conditions in DC Characteristics table 02.2 2016-12-01 Production 1 Updated Features list 02.3 2016-12-07 Production 1 Revised typo in Features 02.4 2017-02-07 Production 2 Updated operating voltage and junction temperature We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2017-02-07 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 02.4, 2017-02-07