PTVA092407NF

PTVA092407NF CREE | Alldatasheet

Document overview

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Technical content

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! PTVA092407NF Package PG-HBSOF-4-2 Thermally-Enhanced High Power RF LDMOS FET

240 W, 48 V, 869 – 960 MHz Features

• Broadband internal input and output matching
• Typical CW performance, 960 MHz, 48 V, 10 µs pulse width, 10% duty cycle, single side - Output power at P 1dB = 240 W - Output power at P3dB = 287 W - Gain = 20 dB - Efficiency = 62%
• Capable of handling 10:1 VSWR @ 48 V, 80 W CW output power
• Integrated ESD protection
• Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolf - speed's 48-V LDMOS process. It is designed for use in multi-standard cel- lular power amplifier applications. It features a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 900 mA, POUT = 80 W avg, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 21.3 22.5 — dB Drain Efficiency hD 38 40 — % Adjacent Channel Power Ratio ACPR — –30 –28.5 dBc Output PAR @ 0.01% CCDF OPAR 5.7 6.2 — dB PTVA092407NF -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 900 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF ptva092407nf_g1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 2PTVA092407NF DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance (Main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.13 — W Operating Gate Voltage (Main) VDS = 48 V, IDQ = 900 mA VGS 3.3 3.7 4.1 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C 1. Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating condi- tions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD) specified above. 2. Parameters values can be affected by end application and product usage. Values may change over time. Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, TCASE = 70°C, 240 W CW) RqJC 0.29 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA092407NF V2 R5 PTVA092407NF-V2-R5 PG-HBSOF-4-2, plastic package Tape & Reel, 500 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 3PTVA092407NF Typical RF Performance (data taken in production test fixture) 825 875 925 975 1025 1075 1125 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 900 mA, POUT = 49 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva092407nf_g3 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 825 875 925 975 1025 1075 1125 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 900 mA, POUT = 49dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptva092407nf_g4 -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 900 mA, ƒ = 960 MHz 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency ptva092407nf_g2 29 33 37 41 45 49 53 57 Efficiency(%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 900 mA 925MHz Gain 942.5MHz Gain 960MHz Gain 925MHz Eff 942.5MHz Eff 960MHz Eff ptva092407nf_g5 Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 4PTVA092407NF Typical RF Performance (cont.) Load Pull Performance Each Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 480 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] -12 -10 875 925 975 1025 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 900 mA IRL Gain ptva092407nf_g70 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 900 mA, ƒ = 960 MHz 44V Gain 48V Gain 52V Gain 44V Eff 48V Eff 52V Eff ptva092407nf_g6

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 5PTVA092407NF Reference Circuit, 869 – 960 MHz Reference circuit assembly diagram (not to scale) R101 C102 C103 C101 C104 C105 C202 C205 C204 C203 C201 C206 C207 C208 C209 C210 C211 C217 C212 C213 C214 C216 C215 RF_IN RF_OUT VDD VDD pt v a09 240 7nf _C D_07 - 17 - 20 18 RO4350, .20 MIL (272) RO4350, .20 MIL (272) PTVA092407NF_IN_04 PTVA092407NF_OUT_04 VGS Reference Circuit Assembly DUT PTVA092407NF V2 Test Fixture Part No. L TN/PTVA092407NF V2 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 869 – 960 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF Components Information Component Description Manufacturer P/N Input C101 Capacitor, 47 pF ATC ATC100B470KW500XT C102 Capacitor, 75 pF ATC ATC100B750KW500XT C103, C105 Capacitor, 10 µF, 100 V TDK Corporation C5750X7S2A106M230KB C104 Capacitor, 3.6 pF ATC ATC100B3R6CW500XT R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEY J100V Output C201, C202, C206, C207, C208, C209, C210, C211, C212, C213, C214, C215, C216, C217 Capacitor, 10 µF, 100 V TDK Corporation C5750X7S2A106M230KB C203, C204 Capacitor, 75 pF ATC ATC100B750KW500XT C205 Capacitor, 10 pF ATC ATC100A101JW150XT

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 6PTVA092407NF Pinout Diagram (top view) Pin Description D Drain G Gate S Source (flange) V Drain video decoupling (use only for decoupling), not for DC biasG D S V V

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 7PTVA092407NF Package Outline Specifications Package PG-HBSOF-4-2 10° PG-HBSOF-4-1_part1_03_07-13-2016 0.25 3.51 R0.5 22.7 ± 0.15 0.5 16.75 9.75 9.75 3.3 1 0.63 1.52 2 X 1.19 25.4 0.63 16.75 2 X 1.61 1.52 1.57 ± 0.15 1.17 Y 0.1 MAX. 16.76 10° G DV V 25.4 Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. PG-HBSOF-4-2_part1_01_11-23-2016 Diagram Notes – unless otherwise specified: 1. Modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Dose not include mold/dam bar/metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All toleranceds ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D = drain; G = gate; S – source; V = drain video decoupling (use only for decoupling), not for DC bias.

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-30 8PTVA092407NF Package Outline Specifications (cont.) Package PG-HBSOF-4-2 VIEW Y 23.26 24.4 0.05 0.50.5 21.3 5.4 3.02 R0.4 2.7 0.75 G D V V S Diagram Notes – unless otherwise specified: 1. Modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Dose not include mold/dam bar/metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All toleranceds ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D = drain; G = gate; S = source; V = drain video decoupling (use only for decoupling), not for DC bias. PG-HBSOF-4-2_part2_01_11-23-2016

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-03-17 Advance All Data Sheet reflects advance specification for product development 02 2016-09-12 Production All Data Sheet reflects released product specification 02.1 2016-11-23 Production 2 Revised conditions in DC Characteristics table 02.2 2016-12-01 Production 1 Updated Features list 02.3 2016-12-07 Production 1 Revised typo in Features 02.4 2017-02-07 Production 2 Updated operating voltage and junction temperature 03 2018-07-30 Production All Revised to V2. Updated the specification, graphs, loadpull performance, reference circuit, package information. www.wolfspeed.comRev. 03, 2018-07-30 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTVA092407NF