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Document overview

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  • PDF pages: 9

Technical content

Features

  • Broadband internal input and output matching
  • Target CW performance, 805 MHz, 48 V, single side - Output power at P3dB = 370 W - Efficiency = 64% - Gain = 20.8 dB
  • Capable of handling 10:1 VSWR @ 48 V, 100 W (CW) output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Description

The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Infineon's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz. RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon production test fixture) VDD = 48 V, IDQ = 800 mA, POUT = 80 W avg, ƒ1 = 805 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF . Characteristic Symbol Min Typ Max Unit Gain Gps 22 23.6 — dB Drain Efficiency hD 37 39 — % Adjacent Channel Power Ratio ACPR — –31.6 –28.5 dBc Output PAR @ 0.01% CCDF , 20 MHz OPAR 6.4 7 — dB -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptva084007nf_g1

Data Sheet 2 of 9 Rev. 03, 2017-08-30 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 48 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.12 — W Operating Gate Voltage VDS = 48 V, IDQ = 0.7 A VGS 3.07 3.67 4.27 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70 °C, 370 W CW) RqJC 0.21 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA084007NF V1 R5 PTVA084007NFV1R5XUMA1 PG-HBSOF-4-2, plastic package Tape & Reel, 500 pcs

Data Sheet 3 of 9 Rev. 03, 2017-08-30 PTVA084007NF Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 57 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency ptva084007nf_g2 -18 -14 -10 -45 -40 -35 -30 -25 675 725 775 825 875 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 800 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptva084007nf_g4 675 725 775 825 875 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ(MAIN) = 800 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva084007nf_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ(MAIN) = 800 mA 805MHz Gain 755MHz Gain 780MHz Gain 755MHz Eff 780MHz Eff 805MHz Eff ptva084007nf_g5

Data Sheet 4 of 9 Rev. 03, 2017-08-30 Typical RF Performance (cont.) Load Pull Performance Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 48 V, IDQ = 700 mA P1dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] hD [%] P3dB Max Output Power Max Drain Efficiency Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] hD [%] 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ(MAIN) = 800 mA, ƒ = 805 MHz 44V 48V 52V ptva084007nf_g6 Gain Efficiency -16 -14 -12 -10 700 750 800 850 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 800 mA IRL Gain ptva084007nf_g7

Data Sheet 5 of 9 Rev. 03, 2017-08-30 PTVA084007NF Reference Circuit, 758 – 803 MHz Reference circuit assembly diagram (not to scale) R101C107 C105 C101 C104 C103 C102 C108 C106 R102 R103 R104 C210 C201 C203 C204 C212 C213 C207 C209 C208 C202 C211 C205 C206 C214 C215 PTVA084007NF_IN_01 RO4350, 20 MIL RO4350, 20 MIL PTVA084007NF_OUT_01 RF_OUTRF_IN VDD VDD VGS VGS

Data Sheet 6 of 9 Rev. 03, 2017-08-30 Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA084007NF V1 Test Fixture Part No. LTN/PTVA084007NF V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 758 – 803 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N Input C101, C103 Capacitor, 3.3 pF ATC ATC600F3R3CW250T C102 Capacitor, 4.7 pF ATC ATC600F4R7CW250T C104, C105, C106 Capacitor, 51 pF ATC ATC600F510JW250T C107, C108 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-3GEYJ100V R103, R104 Resistor, 1000 ohms Panasonic Electronic Components ERJ-8GEYJ102V Output C201, C202, C212, C213, C214, C215 Capacitor, 10 µF , 100 V TDK Corporation C5750X7S2A106M230KB C203, C204, C205, C206 Capacitor, 8.2 pF ATC ATC600F8R2CW250T C207, C208 Capacitor, 3.0 pF ATC ATC600F3R0CW250T C209, C210, C211 Capacitor, 51 pF ATC ATC600F510JW250T Pinout Diagram (top view) G D Pin Description D Drain Device G Gate Device S Source (flange) V Drain video decoupling (use only for decoupling), not for DC bias V V

Data Sheet 7 of 9 Rev. 03, 2017-08-30 PTVA084007NF Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package PG-HBSOF-4-2 10° PG-HBSOF-4-1_part1_03_07-13-2016 0.25 3.51 R0.5 22.7 ± 0.15 0.5 16.75 9.75 9.75 3.3 1 0.63 1.52 2 X 1.19 25.4 0.63 16.75 2 X 1.61 1.52 1.57 ± 0.15 1.17 Y 0.1 MAX. 16.76 10° G DV V 25.4 Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. PG-HBSOF-4-2_part1_01_11-23-2016 Diagram Notes – unless otherwise specified: 1. Modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Dose not include mold/dam bar/metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All toleranceds ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D = drain; G = gate; S – source; V = drain video decoupling (use only for decoupling), not for DC bias.

Data Sheet 8 of 9 Rev. 03, 2017-08-30 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Package Outline Specifications Package PG-HBSOF-4-2 VIEW Y 23.26 24.4 0.05 0.50.5 21.3 5.4 3.02 R0.4 2.7 0.75 G D V V S Diagram Notes – unless otherwise specified: 1. Modem/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Dose not include mold/dam bar/metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All toleranceds ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D = drain; G = gate; S = source; V = drain video decoupling (use only for decoupling), not for DC bias. PG-HBSOF-4-2_part2_01_11-23-2016

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-11-23 Advance All Data Sheet reflects advance specification for product development 02 2017-07-06 Preliminary All Data Sheet reflects preliminary specification 03 2017-08-30 Production All Data Sheet reflects released product specification We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Y our feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2017-08-30 Published by Infineon Technologies AG

85579 Neubiberg, Germany

© 2016 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In- fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2017-08-30