PTVA082407NF

PTVA082407NF CREE | Alldatasheet

Document overview

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Technical content

All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 PTVA082407NF Package PG-HBSOF-4-1 Thermally-Enhanced High Power RF LDMOS FET

240 W, 48 V, 746 – 821 MHz Features

• Broadband internal input matching
• Typical CW performance, 755 MHz, 48 V - Output power at P1dB = 225 W - Output power at P3dB = 250 W - Gain = 20.5 dB - Efficiency = 43%
• Capable of handling 10:1 VSWR @ 48 V, 80 W CW output power
• Integrated ESD protection
• Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant

Description

The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-stan- dard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 900 mA, POUT = 80 W avg, ƒ = 755 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 21 22.5 — dB Drain Efficiency hD 33 35.5 — % Adjacent Channel Power Ratio ACPR — –31.5 –29.5 dBc -60 -40 -20 25 30 35 40 45 50 55 Efficiency (%) Peak/Average Ratio, Gain (dB) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

PAR @ 0.01% CCDF ptva082407nf_g1 PTVA082407NF

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 2PTVA082407NF DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.16 — W Operating Gate Voltage VDS = 48 V, IDQ = 0.9 A VGS 3.0 3.78 4.0 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (TCASE = 70°C, 240 W CW) RqJC 0.32 °C/W

Ordering Information

Type and Version Order Code Package Description Shipping PTVA082407NF V1 R5 PTVA082407NF-V1-R5 PG-HBSOF-4-1, plastic package Tape & Reel, 500 pcs

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 3PTVA082407NF Typical RF Performance (data taken in production test fixture) -70 -60 -50 -40 -30 -20 -10 25 30 35 40 45 50 55 Efficiency (%) ACP Up & Low (dBc) Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz ACPU ACPL Efficiency ptva082407nf_g2 -30 -25 -20 -15 -10 -35 -30 -25 -20 -15 -10 675 700 725 750 775 800 825 Return Loss (dB) ACPL & ACP Up (dBc) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 900 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB ACPU ACPL IRL ptva082407nf_g4 675 700 725 750 775 800 825 Efficiency (%) Gain (dB) Frequency (MHz) Single-carrier WCDMA Broadband Performance VDD = 48 V, IDQ = 900 mA, POUT = 49.03 dBm, 3GPP WCDMA signal, PAR = 10 dB Efficiency Gain ptva082407nf_g3 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance VDD = 48 V, IDQ = 900 mA 745MHz 755MHz 750MHz ptra093608pv_g5 Gain Efficiency

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 4PTVA082407NF Typical RF Performance (cont.) Load Pull Performance Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, IDQ = 480 mA P1dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] PAE [%] Zl [W] Gain [dB] P1dB [dBm] P1dB [W] PAE [%] P3dB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] PAE [%] Zl [W] Gain [dB] P3dB [dBm] P3dB [W] PAE [%] 29 33 37 41 45 49 53 57 Efficiency (%) Gain (dB) Output Power (dBm) CW Performance at various VDD IDQ = 900 mA, ƒ = 755 MHz 44 V 48 V 52 V ptva082407nf_g6 Gain Efficiency -16 -14 -12 -10 675 725 775 825 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 48 V, IDQ = 900 mA IRL Gain ptva082407nf_g7

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 5PTVA082407NF Reference Circuit, 746 – 821 MHz Reference circuit assembly diagram (not to scale) C211 C206 C205 C207 C204 C203C101 C103 R101 C104 C102 RF_OUTRF_IN RO4350, 20MIL (272) PTVA082407NF_OUTPTVA082407NF_IN RO4350, 20MIL (272) VDD VDD VGS C105 C202 C201 C208 C209 C210 C212 C217C213 C214 C215 C216 C218

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 6PTVA082407NF Reference Circuit (cont.) Reference Circuit Assembly DUT PTVA082407NF V1 Test Fixture Part No. LTN/PTVA082407NF V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 746 – 821 MHz Find Gerber files for this test fixture on the Wolfpseed Web site at www.wolfspeed.com/RF Pinout Diagram (top view) Pin Description D Drain G Gate S Source (flange) V Drain video decoupling (use only for decoupling), not for DC bias G D S V V Components Information Component Description Manufacturer P/N Input C101, C103 Capacitor, 56 pF ATC ATC100B560KW500XT C102 Capacitor, 10 pF ATC ATC100B100KW500XT C104, C105 Capacitor, 100V, 10 µF TDK Corporation C5750X7S2A106M230KB R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V Output C201, C202 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C203, C204, C206 Capacitor, 56 pF ATC ATC100B560KW500XT C205 Capacitor, 6.8 pF ATC ATC100B6R8CW500XB C207, C208, C209, C210, C211, C212, C213, 214, C215, C216, C217, C218 Capacitor, 100 V, 10 µF TDK Corporation C5750X7S2A106M230KB

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 7PTVA082407NF Package Outline Specifications Package PG-HBSOF-4-1 10° PG-HBSOF-4-1_part1_03_07-13-2016 0.25 3.51 R0.5 22.7 ± 0.15 0.5 16.75 9.75 9.75 3.3 1 0.63 1.52 2 X 1.19 25.4 0.63 16.75 2 X 1.61 1.52 1.57 ± 0.15 1.17 Y 0.1 MAX. 16.76 10° G DV V 25.4 Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. 1.57 PG-HBSOF-4-1_05_01-17-2017 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – VDD 12. Pins: D = drain; G = gate; S = source; V = Drain video decoupling (use only for decoupling), not for DC bias.

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-21 8PTVA082407NF Package Outline Specifications Package PG-HBSOF-4-1 VIEW Y 23.26 24.4 0.05 0.50.5 21.3 5.4 3.02 R0.4 2.7 0.75 PG-HBSOF-4-1_part2_03_07-13-2016 G D V V S Diagram Notes–unless otherwise specifi ed: 1. Mold/dam bar/metal protusion of 0.30 mm max per side not included. 2. Metal protrusion are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar/metal protusion. 7. Exposed metal surface pre-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specifi ed otherwise. 9. All metal surfaces pre-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – V DD. PG-HBSOF-4-1_05_01-17-2017 Diagram Notes—unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO 8015. 5. Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D – drain; G – gate; S – source; V – VDD12. Pins: D = drain; G = gate; S = source; V = Drain video decoupling (use only for decoupling), not for DC bias.

Revision History

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-03-17 Advance All Data Sheet reflects advance specification for product development 02 2016-09-15 Production All Data Sheet reflects released product specification 02.1 2016-11-23 Production 2 Revised conditions in DC Characteristics table 02.2 2016-12-01 Production 1 Updated Features list 02.3 2016-12-07 Production 1 Revised typo in Features 02.4 2017-02-07 Production 2 Updated operating voltage and junction temperature 02.5 2017-07-18 Production 1, 9 Revised typo 03 2018-06-21 Production All 5, 6 Converted to Wolfspeed Data Sheet Revised reference circuit and component list www.wolfspeed.comRev. 03, 2018-06-21 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816 PTVA082407NF